MTB50N10E3-0-UB-X [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB50N10E3-0-UB-X |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总8页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB50N10E3
BVDSS
100V
29A
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=5V, ID=20A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
32mΩ (typ)
33mΩ (typ)
Symbol
Outline
TO-220
MTB50N10E3
G：Gate
D：Drain
S：Source
G D S
Ordering Information
Device
Package
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
TO-220
(Pb-free lead plating package)
MTB50N10E3-0-UB-X
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB50N10E3
CYStek Product Specification
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
100
±20
29
20.5
5
4
107
24
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current
ID
(Note 2)
(Note 2)
(Note 3)
(Note 3)
A
IDM
IAS
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=24A, VDD=50V (Note 4)
Repetitive Avalanche Energy@ L=0.05mH
EAS
EAR
144
8.3
mJ
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 2)
(Note 2)
83
41
2.1
1.4
PD
W
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1.8
58
Unit
°C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
°
.
3 Pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency and low duty
cycles to keep initial TJ=25°C.
4. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V, VDD=50V
MTB50N10E3
CYStek Product Specification
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 3/8
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
100
-
0.1
-
28
-
-
-
32
33
-
-
2
-
100
1
25
43
45
V
V/°C
V
S
nA
VGS=0V, ID=250μA
-
1
-
-
-
-
-
-
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
GFS
IGSS
±
±
VGS= 20V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
VGS =10V, ID=25A
IDSS
μA
Ω
m
*RDS(ON)
VGS =5V, ID=20A
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
-
25.1
3
5.9
-
-
-
-
-
-
-
-
-
-
-
nC
ID=25A, VDS=50V, VGS=10V
VDS=50V, ID=1A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
8.2
17.4
56.8
24.6
950
108
56
ns
Ω
RG=6
pF
VGS=0V, VDS=30V, f=1MHz
f=1MHz
Ω
Rg
3.5
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
29
A
107
1.2
-
0.9
27
38.5
V
ns
nC
IS=25A, VGS=0V
IF=25A, VGS=0V, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB50N10E3
CYStek Product Specification
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 4/8
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
80
70
60
50
40
30
20
10
0
10V,9V,8V,7V,6V,5V
4
V
0.8
0.6
0.4
3
V
ID=250μA,
VGS=0V
VGS=2.5V
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
DS, Drain-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=4.5V
VGS=5V
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=10V
Tj=150°C
10
0.1
1
10
100
0
4
8
12
16
20
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
2.8
2.4
2
90
80
70
60
50
40
30
20
10
0
VGS=10V, ID=25A
ID=25A
1.6
1.2
0.8
0.4
0
RDS(ON)@Tj=25°C : 32mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTB50N10E3
CYStek Product Specificati
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 5/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
1000
100
10
ID=1mA
0.8
0.6
0.4
0.2
C
oss
ID=250μA
Crss
25
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
5
10
15
20
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Gate Charge Characteristics
VDS=50V
Forward Transfer Admittance vs Drain Current
VDS=10V
100
10
10
8
VDS=20V
6
VDS=15V
1
VDS=80V
4
0.1
0.01
2
Pulsed
Ta=25°C
ID=25A
0
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
30
1000
100
10
25
20
15
10
5
RDS(ON)
Limited
10 s
μ
100μs
1ms
10ms
TC=25°C, Tj=175°C,
JC
100ms
DC
1
θ
VGS=10V,R =1.8°C/W
JC
θ
VGS=10V, R =1.8°C/W
single pulse
0
0.1
25
50
75
100
125
150 175
200
0.1
1
V
10
DS, Drain-Source Voltage(V)
100
1000
TC, Case Temperature(°C)
MTB50N10E3
CYStek Product Specification
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 6/8
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
3000
2500
2000
1500
1000
500
80
VDS=10V
70
TJ(MAX)=175°C
TC=25°C
60
50
40
30
20
10
0
θ
R
JC=1.8°C/W
0
0
1
2
3
4
5
6
7
8
9
10
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
JC
θ
1.RθJC(t)=r(t)*R
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.2
JC
θ
4.R =1.8 °C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB50N10E3
CYStek Product Specification
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB50N10E3
CYStek Product Specification
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
CYStech Electronics Corp.
Page No. : 8/8
TO-220 Dimension
Marking:
B50
N10
□□□□
Device
Name
Date
Code
1
2 3
3-Lead TO-220 Plastic Package
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
CYStek Package Code: E3
*: Typical
Millimeters
Inches
Min.
Millimeters
Inches
DIM
DIM
Min.
4.470
2.520
0.710
1.170
0.310
1.170
10.010
8.500
Max.
4.670
2.820
0.910
1.370
0.530
1.370
10.310
8.900
Max.
0.184
0.111
0.036
0.054
0.021
0.054
0.406
0.350
Min.
Max.
Min.
Max.
12.460
A
A1
b
b1
c
c1
D
E
0.176
0.099
0.028
0.046
0.012
0.046
0.394
0.335
E1
e
e1
F
h
L
12.060
0.475
0.491
2.540*
0.100*
4.980
2.590
0.000
5.180
2.890
0.300
0.196
0.102
0.000
0.528
0.140
0.147
0.204
0.114
0.012
0.543
0.156
0.155
13.400 13.800
L1
Φ
3.560
3.735
3.960
3.935
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB50N10E3
CYStek Product Specification
相关型号：
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