MTDP4953Q8 [CYSTEKEC]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
| 型号： | MTDP4953Q8 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总8页 (文件大小：567K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 1/8
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTDP4953Q8
Description
The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Ω
• RDS(ON)=60m @VGS=-10V, ID=-5A
Ω
RDS(ON)=90m @VGS=-4.5V, ID=-4A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Applications
• Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
Outline
MTDP4953Q8
SOP-8
G：Gate
S：Source
D：Drain
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Symbol
BVDSS
VGS
ID
Limits
Unit
V
-30
±20
V
-5
A
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
ID
-4
A
IDM
-20
A
Pd
2
W
Total Power Dissipation (Note 1)
Linear Derating Factor
0.02
-55~+150
-55~+150
62.5
W / °C
°C
°C
°C/W
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
2.Pulse width ≤300μs, duty cycle≤2%
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
-30
-1
-
-
-
-
-
-
-
-
-
-
-2.5
±100
-1
60
90
V
V
nA
μA
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-24V, VGS=0
ID=-5A, VGS=-10V
ID=-4A, VGS=-4.5V
IDSS
*RDS(ON)
mΩ
-
*GFS
-
5
-
S
VDS=-5V, ID=-5A
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
582
125
86
9
10
37
23
11.7
2.1
2.9
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=-15V, VGS=0, f=1MHz
VDS=-15V, ID=-1A,
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
Ω
Ω
VGS=-10V, RG=6 , RD=15
VDS=-15V, ID=-5A,
VGS=-10V,
nC
V
*Qgs
*Qgd
Source-Drain Diode
*VSD
-
-0.84
-1.2
VGS=0V, IS=-1.7A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 3/8
CYStech Electronics Corp.
Characteristic Curves
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 4/8
CYStech Electronics Corp.
Characteristic Curves(Cont.)
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 5/8
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Ordering Information
Device
Package
Shipping
Marking
4953SS
SOP-8
(Pb-free)
MTDP4953Q8
3000 pcs / Tape & Reel
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 6/8
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 7/8
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 8/8
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
Top View
A
Marking:
G
I
Device Name
4953SS
Date Code
□□□□
C
B
H
J
D
Front View
Part A
E
K
Part A
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
M
O
F
*: Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
0.2007
Min.
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
Min.
Max.
Min.
Max.
0.20
0.70
0.25
0.52
0.50
0.13
0.15
A
B
C
D
E
F
0.1909
0.1515
0.2283
0.0480
0.0145
0.1472
0.0570
0.1889
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
I
J
0.0019
0.0118
0.0074
0.0145
0.0118
0.0031
0.0000
0.0078
0.0275
0.0098
0.0204
0.0197
0.0051
0.0059
0.05
0.30
0.19
0.37
0.30
0.08
0.00
0.1555
0.2441
0.0519
0.0185
0.1527
0.0649
0.2007
K
L
M
N
O
G
H
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP4953Q8
CYStek Product Specification
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