MTE015N15RFP-0-UB-X [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;型号: | MTE015N15RFP-0-UB-X |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | N-Channel Enhancement Mode Power MOSFET |
文件: | 总8页 (文件大小:601K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 1/ 8
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE015N15RFP
BVDSS
150V
50A
16 mΩ(typ)
ID@TC=25C, VGS=10V
RDS(ON)@VGS=10V, ID=30A
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Symbol
Outline
MTE015N15RFP
TO-220FP
G:Gate D:Drain S:Source
G D S
Ordering Information
Device
Package
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
TO-220FP
(Pb-free lead plating package)
MTE015N15RFP-0-UB-X
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE015N15RFP
CYStek Product Specification
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
VGS
150
±30
50*
31.6*
7
5.6
200*
84
Continuous Drain Current @TC=25C, VGS=10V
Continuous Drain Current @TC=100C, VGS=10V
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=70C, VGS=10V
Pulsed Drain Current @ VGS=10V
Single Pulse Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=5mH, ID=20 Amps,
VDD=50V
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
ID
IDSM
A
IDM
IAS
EAS
EAR
1000
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
W
Repetitive Avalanche Energy
10
104
41.6
2
TC=25C
TC=100C
TA=25C
TA=70C
PD
Power Dissipation
PDSM
1.3
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TL
300
260
C
TPKG
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1.2
62.5
Unit
C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of
150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. 100% tested by conditions of L=0.1mH, IAS=30A, VGS=10V, VDD=50V
MTE015N15RFP
CYStek Product Specification
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 3/ 8
CYStech Electronics Corp.
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
150
-
0.1
-
23
-
-
-
16
-
-
4
-
100
1
25
20
V
V/C
V
S
nA
VGS=0V, ID=250μA
-
2
-
-
-
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
*GFS
IGSS
±
±
VGS= 30V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125C
VGS =10V, ID=30A
IDSS
μA
-
-
Ω
m
*RDS(ON)
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
-
69
21
22
30.8
24.2
63.4
12.4
3578
555
41
-
-
-
-
-
-
-
-
-
-
-
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
nC
ID=85A, VDS=75V, VGS=10V
Ω
ns
VDD=75V, ID=85A, VGS=10V, RG=2.5
pF
VGS=0V, VDS=30V, f=1MHz
f=1MHz
Ω
0.6
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
50
A
200
1.2
-
0.88
71
207
V
ns
nC
IS=30A, VGS=0V
VGS=0V, IF=30A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE015N15RFP
CYStek Product Specification
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 4/ 8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
200
10V,9V,8V
180
160
140
120
100
80
7V
6V
0.8
0.6
0.4
60
ID=250μA,
VGS=0V
VGS=4.5V
5V
40
20
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=10V
1
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
10
0.1
1
10
100
0
5
10
15
20
25
30
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=10V, ID=30A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.8
2.4
2
180
160
140
120
100
80
ID=30A
1.6
1.2
0.8
0.4
0
60
40
RDS(ON)@Tj=25°C : 16mΩ typ.
20
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE015N15RFP
CYStek Product Specification
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
1000
100
10
Ciss
ID=1mA
0.8
0.6
0.4
0.2
Coss
Crss
40
ID=250μA
1
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
50
60
70
80
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
8
VDS=75V
6
VDS=15V
1
VDS=120V
ID=85A
4
0.1
0.01
2
Pulsed
Ta=25°C
0
0
7
14 21 28 35 42 49 56 63 70
Total Gate Charge---Qg(nC)
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
60
1000
100
10
50
40
30
20
10
0
RDS(ON)
10μs
Limited
100μs
1ms
10ms
100ms
DC
TC=25°C, Tj=150°C,
VGS=10V,RθJC=1.2°C/W
single pulse
1
VGS=10V, RθJC=1.2°C/W
0.1
25
50
75
100
125
150
175
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE015N15RFP
CYStek Product Specification
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 6/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
200
180
160
140
120
100
80
VDS=10V
TJ(MAX)=150°C
TC=25°C
RθJC=1.2°C/W
60
40
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.2 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE015N15RFP
CYStek Product Specification
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 7/ 8
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE015N15RFP
CYStek Product Specification
Spec. No. : C838FP
Issued Date : 2016.11.21
Revised Date : 2017.01.04
Page No. : 8/ 8
CYStech Electronics Corp.
TO-220FP Dimension
Marking:
E015
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Millimeters
Inches
Millimeters
Inches
DIM
DIM
Min.
Max.
Min.
4.35
Max.
4.65
Min.
0.246
Max.
0.258
Min.
6.25
Max.
6.55
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
0.171
0.183
G
H
H1
H2
J
K
L
L1
L2
M
N
0.051 REF
1.300 REF
0.138 REF
0.055 REF
0.256 0.272
3.50 REF
1.40 REF
6.50 6.90
0.112
0.102
0.020
0.031
0.124
0.110
0.030
0.041
2.85
2.60
0.50
0.80
3.15
2.80
0.75
1.05
0.031 REF
0.020
0.80 REF
0.50 REF
0.047 REF
1.20 REF
1.102
0.043
0.036
1.118
0.051
0.043
28.00
1.10
0.92
28.40
1.30
1.08
0.020
0.396
0.583
0.030
0.404
0.598
0.500
10.06
14.80
0.750
10.26
15.20
0.067 REF
0.012 REF
1.70 REF
0.30 REF
0.100 *
0.106 REF
2.54*
2.70 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE015N15RFP
CYStek Product Specification
相关型号:
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