MTE050N15BRH8-0-T6-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE050N15BRH8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总11页 (文件大小：863K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTE050N15BRH8
BVDSS
150V
16A
ID@VGS=10V, TC=25°C
4.3A
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=3.4A
RDS(ON)@VGS=6V, ID=3.3A
49.1mΩ(typ)
58.5 mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
Outline
MTE050N15BRH8
DFN5×6
Pin 1
D
D
D
D
D
D
D
G
D
S
S
S
S
S
S
G：Gate D：Drain S：Source
G
Pin 1
Ordering Information
Device
Package
Shipping
DFN 5 ×6
MTE050N15BRH8-0-T6-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
150
±20
16
10
4.3 *3
3.4 *3
50 *1,2
36
V
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
ID
IDSM
A
IDM
IAS
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
TC=25℃
EAS
128
36
14.4
2.5 *3
1.6 *3
mJ
W
PD
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=4.5A, Rated VDS=150V N-CH
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
Symbol
Value
3.5
50 *3
Unit
°C/W
RθJC
RθJA
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
150
-
-
4
-
100
1
5
65
82
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=3A
V
2
-
-
-
-
-
-
-
5.5
-
-
-
S
nA
*1
±
±
IGSS
VGS= 20V, VDS=0V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=55°C
VGS =10V, ID=3.4A
IDSS
μA
49.1
58.5
Ω
m
RDS(ON) *1
Dynamic
VGS =6V, ID=3.3A
Ciss
Coss
Crss
-
-
-
1206
80
7.3
-
-
-
pF
VDS=80V, VGS=0V, f=1MHz
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Qg
Qgs
Qgd
td(ON) *1, 2
-
-
-
-
-
-
-
-
20.1
5.3
4.7
15.4
17.2
35.6
8.8
-
-
-
-
-
-
-
-
*1, 2
nC
*1, 2
VDS=75V, VGS=10V, ID=3.4A
*1, 2
VDS=100V, ID=1A, VGS=10V,
tr
*1, 2
ns
td(OFF) *1, 2
RGS=6Ω
tf
Rg
*1, 2
f=1MHz
Ω
2
Source-Drain Diode
-
-
-
-
-
IS
ISM *3
VSD *1
trr
Qrr
16
50
1.2
-
-
*1
A
0.78
44.3
71.7
V
ns
nC
IS=3.2A, VGS=0V
-
-
IF=3.2A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 4/11
Recommended Soldering Footprint & Stencil Design
unit : mm
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 5/11
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
50
10V
9V
40
8V
7V
6V
30
5V
20
10
0
0.8
0.6
4.5V
ID=250μA,
VGS=0V
VGS=4V
0
2
4
6
8
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
1
Tj=25°C
0.8
0.6
0.4
0.2
VGS=6V
10V
Tj=150°C
10
0
2
4
6
8
10 12 14 16 18 20
0.1
1 10
ID, Drain Current(A)
100
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
VGS=10V, ID=3.4A
RDSON@Tj=25°C : 49.1mΩ typ.
180
160
140
120
100
80
ID=3.4A
2
1.6
1.2
0.8
0.4
0
60
40
20
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
MTE050N15BRH8
CYStek Product Specificati
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 6/11
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
10000
Ciss
1000
ID=1mA
C
oss
100
10
1
0.8
0.6
0.4
0.2
I =250 A
μ
D
Crss
60
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
40
50
70
80
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=30V, 75V, 120V
from left to right
8
6
4
2
0
1
VDS=15V
0.1
0.01
Pulsed
Ta=25°C
ID=3.4A
20
0
4
8
12
16
24
0.001
0.01
0.1
ID, Drain Current(A)
1
10
100
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
5
100
10
4.5
4
RDS(ON)
Limited
3.5
3
100 s
μ
2.5
2
1
1ms
10ms
1.5
1
100ms
1s
0.1
0.01
TA=25°C, Tj=150°C, VGS=10V
RθJA=50°C/W, Single Pulse
TA=25°C, VGS=10V, R =50°C/W
θJA
0.5
0
Single Pulse
DC
25
50
75
100
125
Tj, Junctione Temperature(°C)
150
175
0.01
0.1
V
1
10
DS, Drain-Source Voltage(V)
100
1000
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 7/11
Typical Characteristics(Cont.)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
100
20
16
12
8
RDS(ON)
Limited
10
100 s
μ
1ms
1
10ms
JC
θ
TC=25°C, Tj=150°C, VGS=10V
=2.5°C/W, Single Pulse
4
VGS=10V, R =3.5°C/W
100ms
DC
R
θJC
0
0.1
25
50
75
100
125
150
175
0.1
1
10
DS, Drain-Source Voltage(V)
100
1000
V
TC, Case Temperature(°C)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40
30
20
10
0
300
VDS=10V
TJ(MAX)=150°C
TA=25°C
250
200
150
100
50
R
=50°C/W
θJA
0
0.0001 0.001
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
VGS, Gate-Source Voltage(V)
8
9
10
Pulse Width(s)
Single Pulse Maximum Power Dissipation
600
500
400
300
200
100
0
TJ(MAX)=150°C
TC=25°C
θ
R
JC=3.5°C/W
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 8/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JC
θ
1.RθJC(t)=r(t)*R
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.05
0.02
0.01
JC
θ
4.R =3.5 °C/W
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
t1, Square Wave Pulse Duration(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*Rθ
JA
0.1
2.Duty Factor, D=t1/t2
0.05
3.TJM-TA=PDM*RθJA(t)
=50
4.Rθ
JA
°C/W
0.02
0.01
0.01
Single Pulse
1.E-02
0.001
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 9/11
Reel Dimension
Carrier Tape Dimension
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 10/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
CYStech Electronics Corp.
Page No. : 11/11
DFN5×6 Dimension
Marking:
E050N
15BR
Device Name
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
0.90
0.00
0.33
0.20
4.80
3.61
5.90
5.70
Max.
Max.
0.043
0.002
0.020
0.012
0.197
0.156
Min.
3.38
Max.
3.78
Min.
Max.
A
A1
b
1.10
0.05
0.51
0.30
5.00
3.96
6.10
5.80
0.035
0.000
0.013
0.008
0.189
0.142
E2
e
H
K
L
L1
θ
0.133
0.149
1.27 BSC
0.050 BSC
0.41
1.10
0.51
0.06
8°
0.61
-
0.71
0.20
12°
0.016
0.043
0.020
0.002
8°
0.024
-
0.028
0.008
12°
C
D1
D2
E
0.232
0.224
0.240
0.228
E1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE050N15BRH8
CYStek Product Specification
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