MTN3K16N3 [CYSTEKEC]

30V N-CHANNEL Enhancement Mode MOSFET; 30V N沟道增强型MOSFET
MTN3K16N3
型号: MTN3K16N3
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

30V N-CHANNEL Enhancement Mode MOSFET
30V N沟道增强型MOSFET

文件: 总7页 (文件大小:519K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C427N3-A  
Issued Date : 2008.05.30  
Revised Date : 2008.07.01  
Page No. : 1/7  
CYStech Electronics Corp.  
30V N-CHANNEL Enhancement Mode MOSFET  
MTN3K16N3  
Features  
VDS=30V  
Ω
RDS(ON)<65m @VGS=10V, ID=3.6A  
Ω
RDS(ON)<105m @VGS=4.5V, ID=2.8A  
Low on-resistance  
High speed : ton=24ns(typ.), toff=19ns(typ.)  
Pb-free package  
Equivalent Circuit  
Outline  
MTN3K16N3  
SOT-23  
D
S
GGate  
G
SSource  
DDrain  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Drain-Source Voltage  
VDS  
VGS  
ID  
30  
V
V
Gate-Source Voltage  
±20  
Continuous Drain Current  
Pulsed Drain Current  
3.6 (Note 1)  
15 (Note 2 & 3)  
1.4  
A
IDM  
A
Maximum Power Dissipation  
Linear Derating Factor  
W
PD  
0.01  
W/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating Junction and Storage Temperature  
Rth, j-a  
90 (Note 1)  
-55 ~ +150  
Tj, Tstg  
Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad  
2. Pulse width limited by maximum junction temperature  
3. Pulse width300μs, duty cycle2%  
MTN3K16N3  
CYStek Product Specification  
Spec. No. : C427N3-A  
Issued Date : 2008.05.30  
Revised Date : 2008.07.01  
Page No. : 2/7  
CYStech Electronics Corp.  
Electrical Characteristics (Tj=25°C, unless otherwise specified)  
Symbol  
Static  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVDSS  
VGS(th)  
IGSS  
30  
1.0  
-
-
-
15  
-
-
-
-
-
-
-
-
-
-
7
-
3.0  
±100  
1
10  
-
65  
105  
-
V
V
nA  
μA  
μA  
A
VGS=0, ID=250μA  
VDS=VGS, ID=250μA  
VGS=±20V, VDS=0  
VDS=30V, VGS=0  
VDS=24V, VGS=0, Tj=55°C  
VGS=10V, VDS=5V  
ID=3.6A, VGS=10V  
ID=2.8A, VGS=4.5V  
VDS=5V, ID=3.6A  
IDSS  
ID(ON)  
*RDS(ON)  
mΩ  
*GFS  
-
S
Dynamic  
Ciss  
Coss  
Crss  
*td(ON)  
*tr  
*td(OFF)  
*tf  
*Qg  
-
-
-
-
-
-
-
-
460  
62  
106  
24  
15  
19  
6
-
-
-
-
-
-
-
-
pF  
ns  
VDS=15V, VGS=0, f=1MHz  
VDS=15V, ID=2A,  
Ω
VGS=4V, RG=10  
5.0  
nC  
V
VDS=24V, ID=4A, VGS=4V  
Source-Drain Diode  
*VSD  
-
-
1.2  
VGS=0V, IS=1.2A  
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
Ordering Information  
Device  
Package  
SOT-23  
(Pb-free)  
Shipping  
3000 pcs / Tape & Reel  
Marking  
MTN3K16N3  
3K16  
MTN3K16N3  
CYStek Product Specification  
Spec. No. : C427N3-A  
Issued Date : 2008.05.30  
Revised Date : 2008.07.01  
Page No. : 3/7  
CYStech Electronics Corp.  
Characteristic Curves  
10000  
15  
14  
13  
12  
11  
10  
9
10V  
4.5V  
Common Source  
4V  
Ta=25  
Ta=100  
1000  
100  
10  
3.5V  
3.3V  
25  
-25  
8
7
3V  
6
5
1
2.8V  
4
3
2
1
0
VDS=5V  
0.1  
0.01  
Common Source  
VGS=2.6  
1.5  
0
0.5  
1
2
0
1
2
3
4
GS(V)  
V
DS (V)  
V
Fig 2. Transfer Characteristics  
Fig 1. Typical Output Characteristics  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
ID=2A  
Common Source  
Common Source  
Ta =25  
VGS=4V  
VGS=4  
4.5V  
4.5V  
10V  
10V  
0
2
4
6
8
10  
12  
14  
16  
-25  
0
25  
50  
75  
)
100  
125  
150  
D (A)  
I
A(  
T
Fig 3. On-Resistance vs. Drain Current and  
Gate Voltage  
Fig 4. On-Resistance vs Ambient Temperature  
3
2.5  
2
200  
160  
120  
80  
VDS=5V  
Common Source  
ID=2A  
ID=0.1mA  
Common Source  
1.5  
1
Ta=100  
25  
40  
0.5  
0
-25  
0
-25  
0
25  
50  
75  
)
100  
125  
150  
0
2
4
6
8
10  
A(  
T
GS (V)  
V
Fig 6. Gate Threshold Voltage vs Ambient Temperature  
Fig 5. On-Resistance vs. Gate-Source Voltage  
MTN3K16N3  
CYStek Product Specification  
Spec. No. : C427N3-A  
Issued Date : 2008.05.30  
Revised Date : 2008.07.01  
Page No. : 4/7  
CYStech Electronics Corp.  
Characteristic Curves(Cont.)  
MTN3K16N3  
CYStek Product Specification  
Spec. No. : C427N3-A  
Issued Date : 2008.05.30  
Revised Date : 2008.07.01  
Page No. : 5/7  
CYStech Electronics Corp.  
Reel Dimension  
Carrier Tape Dimension  
MTN3K16N3  
CYStek Product Specification  
Spec. No. : C427N3-A  
Issued Date : 2008.05.30  
Revised Date : 2008.07.01  
Page No. : 6/7  
CYStech Electronics Corp.  
Recommended wave soldering condition  
Product  
Peak Temperature  
Soldering Time  
5 +1/-1 seconds  
Pb-free devices  
260 +0/-5 °C  
Recommended temperature profile for IR reflow  
Profile feature  
Average ramp-up rate  
(Tsmax to Tp)  
Sn-Pb eutectic Assembly  
Pb-free Assembly  
3°C/second max.  
3°C/second max.  
Preheat  
Temperature Min(TS min)  
Temperature Max(TS max)  
Time(ts min to ts max)  
100°C  
150°C  
60-120 seconds  
150°C  
200°C  
60-180 seconds  
Time maintained above:  
Temperature (TL)  
Time (tL)  
183°C  
60-150 seconds  
240 +0/-5 °C  
217°C  
60-150 seconds  
260 +0/-5 °C  
Peak Temperature(TP)  
Time within 5°C of actual peak  
temperature(tp)  
10-30 seconds  
20-40 seconds  
Ramp down rate  
6°C/second max.  
6°C/second max.  
6 minutes max.  
8 minutes max.  
Time 25 °C to peak temperature  
Note : All temperatures refer to topside of the package, measured on the package body surface.  
MTN3K16N3  
CYStek Product Specification  
Spec. No. : C427N3-A  
Issued Date : 2008.05.30  
Revised Date : 2008.07.01  
Page No. : 7/7  
CYStech Electronics Corp.  
SOT-23 Dimension  
Marking:  
A
L
3
3K16  
S
B
1
2
3-Lead SOT-23 Plastic  
Surface Mounted Package  
CYStek Package Code: N3  
V
G
Style: Pin 1.Gate 2.Source 3.Drain  
C
D
K
H
J
*: Typical  
DIM  
Inches  
Millimeters  
Inches  
Millimeters  
DIM  
Min.  
Max.  
Min.  
Max.  
3.04  
1.60  
1.30  
0.50  
2.30  
0.10  
Min.  
Max.  
Min.  
0.085  
0.32  
0.85  
2.10  
0.25  
Max.  
0.177  
0.67  
1.15  
2.75  
0.65  
A
B
C
D
G
H
0.1102 0.1204  
0.0472 0.0630  
0.0335 0.0512  
0.0118 0.0197  
0.0669 0.0910  
0.0005 0.0040  
2.80  
1.20  
0.89  
0.30  
1.70  
0.013  
J
K
L
S
V
0.0034  
0.0128  
0.0335  
0.0830  
0.0098  
0.0070  
0.0266  
0.0453  
0.1083  
0.0256  
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy ; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTN3K16N3  
CYStek Product Specification  

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