MTN3K16N3 [CYSTEKEC]
30V N-CHANNEL Enhancement Mode MOSFET; 30V N沟道增强型MOSFET![MTN3K16N3](http://pdffile.icpdf.com/pdf1/p00140/img/icpdf/MTN3K_772801_icpdf.jpg)
型号: | MTN3K16N3 |
厂家: | ![]() |
描述: | 30V N-CHANNEL Enhancement Mode MOSFET |
文件: | 总7页 (文件大小:519K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 1/7
CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN3K16N3
Features
• VDS=30V
Ω
RDS(ON)<65m @VGS=10V, ID=3.6A
Ω
RDS(ON)<105m @VGS=4.5V, ID=2.8A
• Low on-resistance
• High speed : ton=24ns(typ.), toff=19ns(typ.)
• Pb-free package
Equivalent Circuit
Outline
MTN3K16N3
SOT-23
D
S
G:Gate
G
S:Source
D:Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
VGS
ID
30
V
V
Gate-Source Voltage
±20
Continuous Drain Current
Pulsed Drain Current
3.6 (Note 1)
15 (Note 2 & 3)
1.4
A
IDM
A
Maximum Power Dissipation
Linear Derating Factor
W
PD
0.01
W/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Rth, j-a
90 (Note 1)
-55 ~ +150
Tj, Tstg
Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
2. Pulse width limited by maximum junction temperature
3. Pulse width≤300μs, duty cycle≤2%
MTN3K16N3
CYStek Product Specification
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 2/7
CYStech Electronics Corp.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
30
1.0
-
-
-
15
-
-
-
-
-
-
-
-
-
-
7
-
3.0
±100
1
10
-
65
105
-
V
V
nA
μA
μA
A
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0, Tj=55°C
VGS=10V, VDS=5V
ID=3.6A, VGS=10V
ID=2.8A, VGS=4.5V
VDS=5V, ID=3.6A
IDSS
ID(ON)
*RDS(ON)
mΩ
*GFS
-
S
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
-
-
-
-
-
-
-
-
460
62
106
24
15
19
6
-
-
-
-
-
-
-
-
pF
ns
VDS=15V, VGS=0, f=1MHz
VDS=15V, ID=2A,
Ω
VGS=4V, RG=10
5.0
nC
V
VDS=24V, ID=4A, VGS=4V
Source-Drain Diode
*VSD
-
-
1.2
VGS=0V, IS=1.2A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
MTN3K16N3
3K16
MTN3K16N3
CYStek Product Specification
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 3/7
CYStech Electronics Corp.
Characteristic Curves
10000
15
14
13
12
11
10
9
10V
4.5V
Common Source
4V
Ta=25
Ta=100
℃
℃
1000
100
10
3.5V
3.3V
25
℃
-25
℃
8
7
3V
6
5
1
2.8V
4
3
2
1
0
VDS=5V
0.1
0.01
Common Source
VGS=2.6
1.5
0
0.5
1
2
0
1
2
3
4
GS(V)
V
DS (V)
V
Fig 2. Transfer Characteristics
Fig 1. Typical Output Characteristics
100
90
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
ID=2A
Common Source
Common Source
Ta =25
℃
VGS=4V
VGS=4
4.5V
4.5V
10V
10V
0
2
4
6
8
10
12
14
16
-25
0
25
50
75
)
100
125
150
D (A)
I
A(
T
℃
Fig 3. On-Resistance vs. Drain Current and
Gate Voltage
Fig 4. On-Resistance vs Ambient Temperature
3
2.5
2
200
160
120
80
VDS=5V
Common Source
ID=2A
ID=0.1mA
Common Source
1.5
1
Ta=100
℃
25
℃
40
0.5
0
-25
℃
0
-25
0
25
50
75
)
100
125
150
0
2
4
6
8
10
A(
T
℃
GS (V)
V
Fig 6. Gate Threshold Voltage vs Ambient Temperature
Fig 5. On-Resistance vs. Gate-Source Voltage
MTN3K16N3
CYStek Product Specification
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 4/7
CYStech Electronics Corp.
Characteristic Curves(Cont.)
MTN3K16N3
CYStek Product Specification
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 5/7
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTN3K16N3
CYStek Product Specification
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 6/7
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3K16N3
CYStek Product Specification
Spec. No. : C427N3-A
Issued Date : 2008.05.30
Revised Date : 2008.07.01
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
3
3K16
S
B
1
2
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
V
G
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
3.04
1.60
1.30
0.50
2.30
0.10
Min.
Max.
Min.
0.085
0.32
0.85
2.10
0.25
Max.
0.177
0.67
1.15
2.75
0.65
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
2.80
1.20
0.89
0.30
1.70
0.013
J
K
L
S
V
0.0034
0.0128
0.0335
0.0830
0.0098
0.0070
0.0266
0.0453
0.1083
0.0256
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3K16N3
CYStek Product Specification
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