MTN6N70FP_18 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTN6N70FP_18 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总8页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
BVDSS : 700V
RDS(ON) :1.05Ω(typ.)
MTN6N70FP
ID : 6A
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
Outline
TO-220FP
MTN6N70FP
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Package
TO-220
(RoHS compliant)
MTN6N70FP-0-UB-S
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN6N70FP
CYStek Product Specification
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V,TC=100°C
Pulsed Drain Current @ VGS=10V
Single Pulse Avalanche Energy @L=10mH, IAS=4A , VDD=50V (Note 2)
Single Pulse Avalanche Current @L=1mH
Repetitive Avalanche Energy
VDS
VGS
700
±30
6*
3.8*
24*
80
V
A
ID
(Note 1)
IDM
EAS
IAS
mJ
A
mJ
(Note 1)
5
5
(Note 1)
EAR
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
TL
300
°C
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
W
W/°C
°C
54
0.43
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
.
Note : 1 Repetitive rating; pulse width limited by maximum junction temperature.
.
2 100% tested by conditions of IAS=3A, VDD=50V, L=2mH, VG=10V.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
2.3
62.5
Unit
°C/W
MTN6N70FP
CYStek Product Specification
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 3/8
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
℃
BVDSS
∆BVDSS/∆Tj
VGS(th)
700
-
0.7
-
-
-
4.0
-
V
VGS=0V, ID=250μA, Tj=25
-
2.0
-
V/°C
V
S
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=5A
*GFS
10.5
nA
±
±
IGSS
-
-
-
-
-
-
100
1
VGS= 30V, VDS =0V
VDS =700V, VGS =0V
°
VDS =560V, VGS =0V, Tj=125 C
IDSS
μA
10
Ω
*RDS(ON)
Dynamic
*Qg
-
1.05
1.4
VGS =10V, ID=3A
-
-
-
-
-
-
-
-
-
-
29.1
5.3
9.8
14.8
8.6
41.4
11.4
1264
99
-
-
-
-
-
-
-
-
-
-
nC
ns
ID=3A, VDD=560V, VGS=10V
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
VDD=350V, ID=3A, VGS=10V,
Ω
RG=1
pF
VGS=0V, VDS=25V, f=1MHz
IS=6A, VGS=0V
80
Source-Drain Diode
*VSD
*IS
*ISM
*trr
-
-
-
-
-
0.82
-
-
382
2.5
1.4
6
24
-
V
A
ns
μC
VGS=0V, IF=6A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN6N70FP
CYStek Product Specification
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 4/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.2
1.1
1
20
10V
9V
8V
15
7V
6V
5V
4.5V
10
0.9
0.8
5
0
ID=250μA,
VGS=4V
VGS=0V
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20 30
DS, Drain-Source Voltage(V)
40
50
,
TA Ambient Temperature(°C)
V
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
20
15
10
5
2
1.8
1.6
1.4
1.2
1
Ta=25°C
VGS=10V
VDS=30V
0.8
0.6
0.4
0.2
0
VDS=10V
0
0
1
2
3
4
5
6
7
8
9
10
0.001
0.01
0.1
1
10
100
,
ID Drain Current(A)
Gate-Source Voltage-V (V)
GS
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Body Diode Forward Drain Current vs Source-Drain
Voltage and Temperature
10
1
5
4
3
2
1
0
VGS=0V
Tj=150°C
Tj=25°C
0.1
0.01
0.001
Ta=25°C
ID=3A
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
,
,
VSD Source Drain Voltage(V)
VGS Gate-Source Voltage(V)
MTN6N70FP
CYStek Product Specification
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Static Drain-Source On-resistance vs Ambient Temperature
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
VGS=10V, ID=3A
Ciss
RDSON@Tj=25°C : 1.05Ω typ.
1000
Coss
100
10
f=1MHz
Crss
1
0
10 20 30 40 50 60 70 80 90 100
-75 -50 -25
0
25 50 75 100 125 150 175
Ambient Temperature(°C)
,
DS
V
Drain-to-Source Voltage(V)
,
A
T
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
10
8
10 s
μ
VDS=140V
VDS=350V
μ
100 s
1ms
10ms
VDS=560V
6
1
100ms
DC
4
Operation in this area is
limited by RDS(ON)
0.1
0.01
2
ID=3A
30
Single pulse
Tc=25°C; Tj=150°C
0
0
5
10
15
20
25
35
1
10
100
1000
Total Gate Charge---Qg(nC)
Drain-Source Voltage -VDS(V)
Maximum Drain Current vs Case Temperature
Forward Transfer Admittance vs Drain Current
7
6
5
4
3
2
1
0
100
10
1
VDS=15V
0.1
0.01
Ta=25°C
Pulsed
θ
VGS=10V, R JC=2.3°C/W
25
50
75
100
125
150
175
0.001
0.01
0.1
ID, Drain Current(A)
1
10
TC, Case Temperature(°C)
MTN6N70FP
CYStek Product Specification
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 6/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Single Pulse Power Rating, Junction to Case
1.4
1.2
1
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
TJ(MAX)=150°C
TC=25°C
ID=1mA
θ
R
JC=2.3°C/W
0.8
0.6
0.4
0.2
ID=250μA
0
0.0001
0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
JC
θ
θ
1.R JC(t)=r(t)*R
0.05
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.02
0.01
=
°
JC
θ
4.R
2.3 C/W
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN6N70FP
CYStek Product Specification
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN6N70FP
CYStek Product Specification
Spec. No. : C060FP
Issued Date : 2018.03.23
Revised Date :
CYStech Electronics Corp.
Page No. : 8/8
TO-220FP Dimension
Marking:
CYS
6N70
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Millimeters
Inches
Millimeters
Inches
DIM
DIM
Min.
Max.
Min.
4.35
Max.
4.65
Min.
0.246
Max.
0.258
Min.
6.25
Max.
6.55
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
0.171
0.183
G
H
H1
H2
J
K
L
L1
L2
M
N
0.051 REF
1.300 REF
0.138 REF
0.055 REF
0.256 0.272
3.50 REF
1.40 REF
6.50 6.90
0.112
0.102
0.020
0.031
0.124
0.110
0.030
0.041
2.85
2.60
0.50
0.80
3.15
2.80
0.75
1.05
0.031 REF
0.020
0.80 REF
0.50 REF
0.047 REF
1.20 REF
1.102
0.043
0.036
1.118
0.051
0.043
28.00
1.10
0.92
28.40
1.30
1.08
0.020
0.396
0.583
0.030
0.404
0.598
0.500
10.06
14.80
0.750
10.26
15.20
0.067 REF
0.012 REF
1.70 REF
0.30 REF
0.100 *
0.106 REF
2.54*
2.70 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN6N70FP
CYStek Product Specification
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