MMBTA42 [DAYA]
SOT-23 Plastic-Encapsulate Transistors; SOT- 23塑封装晶体管
| 型号： | MMBTA42 |
| 厂家： | 
DAYA ELECTRIC GROUP CO., LTD. |
| 描述： | SOT-23 Plastic-Encapsulate Transistors |
| 文件： | 总3页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT-23 Plastic-Encapsulate Transistors
MMBTA42 TRANSISTOR (NPN)
SOT-23
FEATURES
1. BASE
z
z
z
High breakdown voltage
2. EMITTER
3. COLLECTOR
Low collector-emitter saturation voltage
Complementary to MMBTA92(PNP)
MARKING:1D
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
300
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.3
A
PC
0.35
150
W
℃
℃
Tj
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
300
300
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100μA,IC=0
V
V
ICBO
IEBO
VCB=200V,IE=0
0.25
0.1
μA
μA
Emitter cut-off current
VEB=5V,IC=0
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
VCE=10V,IC=1mA
VCE=10V,IC=10mA
VCE=10V,IC=30mA
IC=20mA,IB=2mA
IC=20mA,IB=2mA
VCE=20V,IC=10mA,f=30MHz
60
100
60
DC current gain
200
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.2
0.9
V
V
50
MHz
MMBTA42
相关型号：
MMBTA42-13
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
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