2DA1797_15 [DIODES]

50V PNP SURFACE MOUNT TRANSISTOR;
2DA1797_15
型号: 2DA1797_15
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

50V PNP SURFACE MOUNT TRANSISTOR

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中文:  中文翻译
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2DA1797  
50V PNP SURFACE MOUNT TRANSISTOR  
Features  
Mechanical Data  
Epitaxial Planar Die Construction  
Case: SOT89  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Complementary NPN Type Available (2DC4672)  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish — Matte Tin. Solderable per MIL-STD-202,  
Method 208  
Weight: 0.052 grams (approximate)  
SOT89  
C
E
C
B
C
B
E
Top View  
Pin-Out  
Top View  
Device symbol  
Ordering Information (Notes 4 & 5)  
Part Number  
2DA1797-13  
2DA1797Q-13  
Compliance  
AEC-Q101  
Automotive  
Marking  
1797  
1797  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
13  
13  
12  
12  
2,500  
2,500  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the  
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
1797 = Product Type Marking Code  
YWW = Date Code Marking  
Y = Last digit of year (ex: 8 = 2008)  
WW = Week code (01 – 53)  
YWW  
1797  
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www.diodes.com  
November 2013  
© Diodes Incorporated  
2DA1797  
Document number: DS31619 Rev. 4 - 2  
2DA1797  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-50  
-50  
-6  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
-6  
A
Continuous Collector Current  
-3  
A
IC  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
PD  
R  
Value  
0.9  
Unit  
W
Power Dissipation (Note 6)  
Thermal Resistance, Junction to Ambient Air (Note 6)  
Power Dissipation (Note 7)  
139  
2
°C/W  
W
JA  
PD  
Thermal Resistance, Junction to Ambient Air (Note 7)  
Thermal Resistance, Junction to Lead (Note 8)  
Operating and Storage Temperature Range  
62.5  
°C/W  
R  
JA  
5.3  
°C/W  
°C  
R  
JL  
-55 to +150  
TJ, TSTG  
ESD Ratings (Note 9)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4,000  
400  
Unit  
V
JEDEC Class  
3A  
C
V
Notes:  
6. Device mounted on FR-4 PCB with minimum recommended pad layout.  
7. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.  
8. Thermal resistance from junction to solder-point (on the exposed collector pad).  
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
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www.diodes.com  
November 2013  
© Diodes Incorporated  
2DA1797  
Document number: DS31619 Rev. 4 - 2  
2DA1797  
Thermal Characteristics and Derating Information (@TA = +25°C, unless otherwise specified.)  
2.0  
FR-4 PCB  
1 inch2 copper pad  
1.6  
10  
1
VCE(sat)  
Limited  
1.2  
0.8  
DC  
1s  
100ms  
FR-4 PCB  
100m  
Minimum  
recommended pad  
10ms  
0.4  
0
Single Pulse  
Tamb=25°C  
1ms  
10  
100µs  
10m  
100m  
1
0
25  
50  
150  
100  
125  
75  
TA, AMBIENT TEMPERATURE (°C)  
-VCE Collector-Emitter Voltage (V)  
Fig. 1 Power Dissipation vs.  
Ambient Temperature  
Safe Operating Area  
1
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.9  
R
(t) = r(t) * R  
JA  
JA  
R
= 126°C/W  
JA  
0.01  
D = 0.01  
P(pk)  
T
t
1
D = 0.005  
t
2
- T = P * R (t)  
J
A
JA  
Duty Cycle, D = t /t  
1
2
D = Single Pulse  
0.001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
t1, PULSE DURATION TIME (s)  
Fig. 10 Transient Thermal Response  
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www.diodes.com  
November 2013  
© Diodes Incorporated  
2DA1797  
Document number: DS31619 Rev. 4 - 2  
2DA1797  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 10)  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-50  
-50  
-6  
V
V
BVCBO  
BVCEO  
BVEBO  
ICBO  
  
IC = -50μA, IE = 0  
IC = -1mA, IB = 0  
IE = -50μA, IC = 0  
VCB = -50V, IE = 0  
VEB = -5V, IC = 0  
V
-0.1  
μA  
μA  
  
Emitter Cut-Off Current  
-0.1  
IEBO  
ON CHARACTERISTICS (Note 10)  
Collector-Emitter Saturation Voltage  
DC Current Gain  
-100  
-350  
270  
mV  
VCE(sat)  
hFE  
82  
IC = -1A, IB = -50mA  
VCE = -2V, IC = -500mA  
SMALL SIGNAL CHARACTERISTICS  
VCB = -10V, IE = 0,  
f = 1MHz  
Output Capacitance  
27  
pF  
Cobo  
fT  
VCE = -2V, IC = -100mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
160  
MHz  
  
  
Notes:  
10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
1,000  
1.0  
0.8  
0.6  
T
= 150°C  
= 85°C  
A
I
I
= -5mA  
B
T
A
T
= 25°C  
A
= -4mA  
= -3mA  
B
100  
T
= -55°C  
A
I
B
0.4  
I
= -2mA  
B
B
0.2  
0
V
= -4V  
CE  
I
= -1mA  
10  
0
4
8
12  
16  
20  
1
10  
100  
1,000  
10,000  
-VCE, COLLECTOR-EMITTER VOLTAGE (V)  
Fig. 3 Typical Collector Current  
-IC, COLLECTOR CURRENT (mA)  
Fig. 4 Typical DC Current Gain vs. Collector Current  
vs. Collector-Emitter Voltage  
10  
1.2  
1.0  
I
/I = 10  
B
V
= -4V  
C
CE  
1
0.1  
0.8  
0.6  
0.4  
T
= 150°C  
A
T
T
= -55°C  
A
T
= 85°C  
A
= 25°C  
= 85°C  
T
= 25°C  
A
A
T
A
T
= -55°C  
A
0.01  
0.001  
T
= 150°C  
A
0.2  
0
1
10  
100  
1,000  
10,000  
1
10  
100  
1,000  
10,000  
-IC, COLLECTOR CURRENT (mA)  
-IC, COLLECTOR CURRENT (mA)  
Fig. 6 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
Fig. 5 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
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www.diodes.com  
November 2013  
© Diodes Incorporated  
2DA1797  
Document number: DS31619 Rev. 4 - 2  
2DA1797  
1,000  
100  
10  
1.2  
1.0  
I
/I = 10  
B
C
f = 1MHz  
0.8  
0.6  
T
T
= -55°C  
A
C
ibo  
= 25°C  
= 85°C  
A
T
A
0.4  
T
= 150°C  
A
0.2  
0
C
obo  
1
10  
100  
1,000  
10,000  
0.1  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
-IC, COLLECTOR CURRENT (mA)  
Fig. 8 Typical Capacitance Characteristics  
Fig. 7 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
1,000  
100  
10  
1
V
= -2V  
CE  
f = 100MHz  
0
10 20 30 40 50 60 70 80 90 100  
-IC, COLLECTOR CURRENT (mA)  
Fig. 9 Typical Gain-Bandwidth Product  
vs. Collector Current  
5 of 7  
www.diodes.com  
November 2013  
© Diodes Incorporated  
2DA1797  
Document number: DS31619 Rev. 4 - 2  
2DA1797  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
D1  
C
SOT89  
Min  
Dim  
A
B
B1  
C
D
Max  
1.60  
0.62  
0.54  
0.44  
4.60  
1.83  
2.60  
H1  
1.40  
0.44  
0.35  
0.35  
4.40  
1.62  
2.29  
H
E
B1  
L
B
D1  
E
e
e
1.50 Typ  
8° (4X)  
H
H1  
L
3.94  
2.63  
0.89  
4.25  
2.93  
1.20  
A
All Dimensions in mm  
D
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
X1  
Dimensions Value (in mm)  
X
0.900  
1.733  
0.416  
1.300  
4.600  
1.475  
0.950  
1.125  
1.500  
X2 (2x)  
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
C
Y1  
Y3  
Y
Y4  
Y2  
C
X (3x)  
6 of 7  
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November 2013  
© Diodes Incorporated  
2DA1797  
Document number: DS31619 Rev. 4 - 2  
2DA1797  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2013, Diodes Incorporated  
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November 2013  
© Diodes Incorporated  
2DA1797  
Document number: DS31619 Rev. 4 - 2  

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