2DB1132R-13R [DIODES]
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,;
| 型号： | 2DB1132R-13R |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, 开关 晶体管 |
| 文件： | 总6页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DB1132P/Q/R
32V PNP POWER SWITCHING TRANSISTOR IN SOT-89
Features
Mechanical Data
BVCEO > -32V
Case: SOT89
Case material: molded Plastic. “Green” molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
IC = -1A high Continuous Collector Current
Complementary NPN Type: 2DD1664
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT89
C
E
E
B
C
B
C
Pin Out
Top View
Top View
Device Symbol
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
2,500
2DB1132P-13
2DB1132Q-13
2DB1132R-13
2DB1132R-13R
P13P
P13Q
P13R
P13R
13
13
13
13
12
12
12
12
2,500
2,500
4,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
(Top View)
P13x = Product Type Marking Code:
Where
P13P = 2DB1132P
P13Q = 2DB1132Q
P13R = 2DB1132R
YWW
P13x
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
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December 2013
© Diodes Incorporated
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2DB1132P/Q/R
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
-32
-5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
-1
A
-2
A
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
(Note 5)
1
Power Dissipation
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
1.5
W
PD
2.0
125
Thermal Resistance, Junction to Ambient Air
83
60
°C/W
RθJA
Thermal Resistance, Junction to Lead
22
°C/W
RθJL
J, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
T
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
Unit
V
JEDEC Class
4,000
400
3A
C
V
Notes:
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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© Diodes Incorporated
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2DB1132P/Q/R
Thermal Characteristics and Derating Information
140.0
3
2
1
0
Tamb=25°C
2oz copper
1oz copper
120.0
100.0
80.0
1oz copper
60.0
40.0
Tamb=25°C
500
2oz copper
2000
0
500
1000
1500
2500
0
1000
1500
2000
2500
Copper Area (sqmm)
Copper Area (sqmm)
120
100
80
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0.0
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
0
25
50
75
100 125 150
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
100
10
1
Single Pulse. Tamb=25°C
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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© Diodes Incorporated
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2DB1132P/Q/R
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
-40
-32
-5
Typ
—
Max
—
Unit
V
Test Condition
IC = -50µA
—
—
—
—
—
—
V
IC = -1mA
IE = -50µA
VCB =-20V
VEB = -4V
V
—
-0.5
-0.5
180
270
390
-500
—
µA
µA
—
Emitter Cut-off Current
IEBO
2DB1132P
Static Forward Current Transfer
2DB1132Q
82
120
180
—
—
—
hFE
I
C = -100mA, VCE = -3V
Ratio (Note 10)
2DB1132R
Collector-Emitter saturation Voltage (Note 10)
Transition frequency
-125
190
12
mV
MHz
pF
VCE(sat)
fT
I
I
I
C =-500mA, IB = -50mA
—
E = 50mA, VCE = -5V,f=30MHz
E = 0A, VCB = -10V,f=1MHz
—
Output Capacitance
30
Cob
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1.6
V
= -3V
CE
500
1.4
T
T
= 150°C
A
1.2
1.0
0.8
0.6
0.4
400
300
200
= 85°C
= 25°C
A
T
A
A
T
= -55°C
100
0
0.2
0
0.001
0.01
0.1
1
10
I
/I = 10
B
C
T
T
= -55°C
A
= 25°C
= 85°C
A
T
= 150°C
A
T
A
T
= 25°C
A
T
= 85°C
V
= -3V
A
T
= 150°C
CE
A
T
= -55°C
A
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© Diodes Incorporated
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2DB1132P/Q/R
40
30
T
= -55°C
A
20
T
= 25°C
= 85°C
A
T
A
10
0
T
= 150°C
A
I
/I = 10
B
C
250
200
150
100
50
V
= -5V
CE
f = 30MHz
-IE, EMITTER CURRENT
Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D1
C
SOT89
Min
Dim
A
B
B1
C
D
Max
1.60
0.62
0.54
0.44
4.60
1.83
2.60
H1
1.40
0.44
0.35
0.35
4.40
1.62
2.29
H
E
B1
L
B
D1
E
e
e
1.50 Typ
8° (4X)
H
H1
L
3.94
2.63
0.89
4.25
2.93
1.20
A
All Dimensions in mm
D
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December 2013
© Diodes Incorporated
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2DB1132P/Q/R
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions Value (in mm)
X
0.900
1.733
0.416
1.300
4.600
1.475
0.950
1.125
1.500
X2 (2x)
X1
X2
Y
Y1
Y2
Y3
Y4
C
Y1
Y3
Y
Y4
Y2
C
X (3x)
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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Copyright © 2013, Diodes Incorporated
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December 2013
© Diodes Incorporated
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
相关型号：
2DB1188Q-13R
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
DIODES
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