2DD2150R-13 [DIODES]
NPN SURFACE MOUNT TRANSISTOR; NPN表面贴装晶体管
| 型号： | 2DD2150R-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DD2150R
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Qualified to AEC-Q101 Standards for High Reliability
TOR
LLEC
2,4
CO
Mechanical Data
3 E
2 C
1 B
•
•
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
C 4
T
1
ASE
B
•
•
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
3
EW
VI
OP
EMITTER
•
•
•
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Value
Unit
V
V
V
A
40
20
6
Peak Pulse Current
5
Continuous Collector Current
3
A
IC
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
Min
Typ
Max
Unit
Conditions
40
20
6
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = 50μA, IE = 0
C = 1mA, IB = 0
V
E = 50μA, IC = 0
CB = 30V, IE = 0
EB = 5V, IC = 0
0.1
⎯
⎯
μA
μA
V
V
Emitter Cut-Off Current
0.1
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
0.2
0.5
V
VCE(SAT)
hFE
⎯
180
I
I
C = 2A, IB = 0.1A
390
⎯
⎯
C = 100mA, VCE = 2V
SMALL SIGNAL CHARACTERISTICS
VCE = 2V, IE = -0.1A
f = 100MHz
Transition Frequency
Output Capacitance
160
28
MHz
pF
fT
⎯
⎯
⎯
⎯
VCB = 10V, IE = 0,
f = 1MHz
Cob
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31148 Rev. 3 - 2
1 of 4
2DD2150R
© Diodes Incorporated
www.diodes.com
2.5
2.0
1.2
1.0
0.8
I
I
= 10mA
= 8mA
B
B
1.5
1.0
I
I
= 6mA
= 4mA
B
B
0.6
0.4
0.5
0.0
I
= 2mA
B
0.2
0
0
1
2
3
4
5
25
50
75
100 125
150 175
0
VCE, COLLECTOR EMITTER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
0.4
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
500
V
= 2V
CE
450
400
350
300
250
200
150
100
I
/I = 20
B
C
0.3
0.2
0.1
T
T
= 150°C
= 85°C
A
A
T
= 25°C
A
A
T
= 150°C
A
T
= 85°C
A
T
= -55°C
T
= 25°C
A
50
0
T
= -55°C
A
0
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 3 Typical DC Current Gain
vs. Collector Current
1.2
1.0
0.8
0.6
1.2
1.0
V
= 2V
CE
I
/I = 20
B
C
0.8
0.6
0.4
T
= -55°C
= 25°C
A
T
= -55°C
A
T
A
T
= 25°C
= 85°C
A
0.4
T
= 85°C
A
T
A
T
= 150°C
0.2
0
0.2
T
= 150°C
A
A
0.0
0.0001
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DS31148 Rev. 3 - 2
2 of 4
www.diodes.com
2DD2150R
© Diodes Incorporated
100
80
175
150
f = 1MHz
125
100
75
60
40
50
V
= 2V
CE
f = 100MHz
20
0
25
0
0
20
40
60
80
100
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
IC, EMITTER CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current
Fig. 7 Typical Output Capacitance Characteristics
Ordering Information (Note 5)
Device
Packaging
Shipping
2DD2150R-13
SOT89-3L
2500/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
N33R = Product Type Marking Code
= Manufacturer’s Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
YWW
N33R
Package Outline Dimensions
SOT89-3L
D1
C
Dim Min Max Typ
A
B
1.40 1.60 1.50
0.45 0.55 0.50
0.37 0.47 0.42
0.35 0.43 0.38
4.40 4.60 4.50
1.50 1.70 1.60
2.40 2.60 2.50
E
B1
C
H
D
L
B
D1
E
e
B1
e
—
—
1.50
A
H
3.95 4.25 4.10
0.90 1.20 1.05
L
All Dimensions in mm
D
DS31148 Rev. 3 - 2
3 of 4
www.diodes.com
2DD2150R
© Diodes Incorporated
Suggested Pad Layout
1.7
2.7
0.4
1.9
1.3
0.9
3.0
Unit: mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31148 Rev. 3 - 2
4 of 4
2DD2150R
© Diodes Incorporated
www.diodes.com
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