AZ494DMTR_技术文档

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

General Description

Features

The AZ494B/D is a voltage mode pulse width modula-

tion switching regulator control circuit designed pri-

marily for power supply control.

·

Stable 4.95V for AZ494B or 5V for AZ494D Ref-

erence Voltage Trimmed to ±1.5% Accuracy

Uncommitted Output TR for 200mA Sink or

Source Current

Single-End or Push-Pull Operation Selected by

Output Control

Internal Circuitry Prohibits Double Pulse at Either

Output

Complete PWM Control Circuit with Variable

Duty Cycle

The AZ494B/D consists of a reference voltage circuit,

two error amplifiers, an on-chip adjustable oscillator, a

dead-time control (DTC) comparator, a pulse-steering

control flip-flop, and an output control circuit. The

AZ494B/D is capable for push-pull or single-ended

output operation, which can be selected through the

output control.

On-Chip Oscillator with Master or Slave Opera-

tion

AZ494B has 4.95V and AZ494D has 5V reference

voltage respectively. The precision of voltage reference

Applications

(V ) is improved up to ± 1.5% through trimming

REF

and this provides a better output voltage regulation.

·

SMPS

Back Light Inverter

Charger

The AZ494B/D is available in standard packages of

DIP-16 and SOIC-16.

DIP-16

SOIC-16

Figure 1. Package Types of AZ494B/D

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

1

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Pin Configuration

M/P Package

(SOIC-16/DIP-16)

1IN +

1IN -

2IN +

2IN -

1

2

3

4

16

15

FEEDBACK

DTC

REF

14

13

12

11

10

9

OUTPUT CTRL

5

6

CT

RT

V

CC

C2

7

8

GND

C1

E2

E1

Figure 2. Pin Configuration of AZ494B/D (Top View)

Output Function Control Table

Signal for Output Control

Output Function

V_I= GND

Single-ended or parallel output

V_I= V_REF

Normal push-pull operation

Functional Block Diagram

OUTPUT CTRL

13

6

8

RT

C1

5

Oscillator

Pulse-Steering

CT

Flip-Flop

Q1

Dead-Time Control

Comparator

9

E1

D

4

C2

11

+

DTC

CK

0.12V

Q2

Error Amplifier 1

+

10

E2

PWM

Comparator

1

2

1IN +

1IN -

12

V_CC

Error Amplifier 2

+

16

15

Reference

Regulator

14

2IN +

2IN -

REF

0.7mA

7

GND

3

FEEDBACK

Figure 3. Functional Block Diagram of AZ494B/D

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

2

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Ordering Information

AZ494

-

E1: Lead Free

Blank: Tin Lead

Circuit Type

TR: Tape and Reel

Blank: Tube

Package

M: SOIC-16

P: DIP-16

Reference Voltage

B: 4.95V

D: 5.0V

Part Number

Marking ID

Lead Free

Temperature

Package

Packing Type

Range

Tin Lead

AZ494BM

Lead Free

AZ494BM-E1

Tin Lead

AZ494BM

Tube

AZ494BM-E1

Tape & Reel

Tube

AZ494BMTR

AZ494DM

AZ494BMTR-E1

AZ494DM-E1

AZ494BM

AZ494DM

AZ494BM-E1

AZ494DM-E1

SOIC-16

-40 to 85^oC

AZ494DMTR

AZ494DMTR-E1

Tape & Reel

Tube

AZ494BP

AZ494DP

AZ494BP-E1

AZ494DP-E1

AZ494BP

AZ494DP

AZ494BP-E1

AZ494DP-E1

DIP-16

Tube

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

3

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Absolute Maximum Ratings (Note 1)

Parameter

Symbol

V_CC

V_I

Value

40

Unit

V

Supply Voltage (Note 2)

Amplifier Input Voltage

Collector Output Voltage

Collector Output Current

-0.3 to V_CC+ 0.3

V

V_O

40

V

I_O

250

mA

M Package

P Package

73

67

Package Thermal Impedance

(Note 3)

^oC/W

R_θJA

^oC

V

Lead Temperature 1.6mm from case for 10 seconds

Storage Temperature Range

260

-65 to 150

200

T_STG

ESD rating (Machine Model)

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum

Ratings"for extended periods may affect device reliability.

Note 2: All voltage values are with respect to the network ground terminal.

Note 3: Maximum power dissipation is a function of T (max), R_θJAand T . The maximum allowable power dissi-

J

A

pation at any allowable ambient temperature is P = ( T (max) - T ) / R_θJA. Operating at the absolute maximum T

D

J

A

J

o

of 150 C can affect reliability.

Recommended Operating Conditions

Parameter

Symbol

Min

7

Max

36

Unit

V

V_CC

Supply Voltage

V_I

V_CC- 2

Amplifier Input Voltage

-0.3

V

V_O

36

V

Collector Output Voltage

Collector Output Current

(Each Transistor)

200

mA

Current Into Feedback Terminal

Oscillator Frequency

0.3

300

10000

500

85

mA

KHz

nF

f_osc

C_T

Timing Capacitor

0.47

1.8

R_T

Timing Resistor

KΩ

^oC

T_A

Operating Free-Air Temperature

Reference Output Current

-40

I_REF

10

mA

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

4

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Electrical Characteristics

o

T = 25 C, V =15V, f=10KHz unless otherwise noted.

A

CC

Parameter

Symbol Conditions (Note 4)

Min

Typ

Max

Unit

Reference Section

for AZ494B

for AZ494D

V_REF

I_REF=1mA

4.875 4.95

5.025

5.075

V

Output Reference

Voltage

4.925

5.0

R_LINEV_CC= 7V to 36V

Line Regulation

Load Regulation

2

1

25

15

mV

mA

R_LOADI_REF=1mA to 10mA

I_SC

V_REF= 0V

Short-Circuit Output Current(Note 5)

25

Oscillator Section, C_T= 0.01µF, R_T= 12KΩ (See Figure 4)

f_osc

Frequency

10

100

1

KHz

All values of V_CC, C_T, R_Tand T_A

constant

Standard Deviation of Frequency

(Note 6)

Hz/KHz

V

_CC=7V to 36V, T_A= 25^oC

Frequency Change with Voltage

Frequency Change with Temperature

(Note 7)

∆T_A= MIN to MAX

10

Error-Amplifier Section

Input Offset Voltage

Input Offset Current

Input Bias Current

V_IO

I_IO

V_O(FEEDBACK) = 2.5V

2

10

250

1

mV

nA

µA

25

0.2

I_BIAS

V_CC

-

V_CM

V_CC=7V to 36V

Common-Mode Input Voltage Range

-0.3

70

V

2

∆V_O= 3V, R_L=2KΩ,

V_O=0.5V to 3.5V

Large-Signal Open-Loop Voltage

Gain

A_VO

95

dB

Unity-Gain Bandwidth

GB

800

80

KHz

dB

V_CC=7V to 36V

Common-Mode Rejection Ratio

CMRR

65

V_ID= -15mV to -5V,

I_SINK

Output Sink Current (FEEDBACK)

Output Source Current (FEEDBACK)

- 0.3 - 0.7

2

mA

V(FEEDBACK) = 0.7V

V_ID= 15mV to 5V, V(FEED-

BACK) = 3.5V

I_SOURCE

Output Section

I_{C, OFF}

I_{E, OFF}

V_CE= 36V, V_CC=36V

Collector Off-State Current

Emitter Off-State Current

Common

2

100

µA

V_CC= V_C= 36V, V_E= 0

-100

1.3

V_E= 0, I_C=200mA

1.1

1.5

Emitter

Collector-Emitter

V

Saturation Voltage

V_O(C1 or C2) = 15V,

Emitter

2.5

Follower

I_E= -200mA

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

5

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Electrical Characteristics (Continued)

Parameter

Symbol

Conditions (Note 4)

Min Typ Max

Unit

V_I= V_REF

Output Control Input Current

Dead-Time Control Section

Input Bias Current

3.5

mA

V_I= 0 to 5.25V

-2

45

3

-10

µA

V_I(DEAD-TIME CTRL) = 0, C_T

Maximum Duty Cycle,

Each Output

%

=0.01µF, R_T=12KΩ

Zero Duty Cycle

3.3

4.5

Input Threshold Voltage

V

Maximum Duty Cycle

0

PWM Comparator Section (See Figure 4)

Input Threshold Voltage (FEEDBACK)

Input Sink Current (FEEDBACK)

Total Device

Zero duty cycle

4

V

V(FEEDBACK) = 0.7V

-0.3

-0.7

mA

V_RT=V_REF

,

All V_CC= 15V

6

9

10

15

I_STDBY

Standby Supply Current

mA

other inputs and

outputs open

V_CC= 36V

V_I(DEAD-TIME-CTRL) =2V

See Figure 4.

Average Supply Current

7.5

Switching Characteristics

Rise Time

t_r

t_f

t_r

t_f

100 200

25 100

100 200

40 100

ns

Common-emitter Configuration

See Figure 6

Fall Time

Rise Time

Emitter-follower Configuration

See Figure 7

Fall Time

Note 4: For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating

conditions.

Note 5: Duration of the short circuit should not exceed one second.

Note 6: Standard deviation is a measure of the statistical distribution about the mean as derived from the formula:

Note 7: Temperature coefficient of timing capacitor and timing resistor are not taken into account.

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

6

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Parameter Measurement information

V_CC= 15V

12

150Ω

4W

150Ω

4W

V_CC

4

3

8

9

DTC

C1

E1

Output 1

Test

Inputs

FEEDBACK

12KΩ

6

11

10

RT

CT

C2

E2

Output 2

5

1

0.01µF

1IN+

1IN-

2

16

15

13

2IN+

2IN-

14

OUTPUT

CTRL

REF

GND

50KΩ

7

Test Circuit

V_CC

0V

Voltage

at C1

V_CC

0V

Voltage

at C2

Voltage

at CT

Threshold Voltage

DTC

0V

Threshold Voltage

FEEDBACK

0.7V

0%

MAX

Duty Cycle

Voltage Waveforms

Figure 4. Operational Test Circuit and Waveforms

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

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Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Parametr Measurement information (Continued)

Amplifier Under Test

FEEDBACK

+

V_I

V_ref

Other Amplifier

Figure 5. Error Amplifier Characteristics

15V

68Ω

4W

t_f

t_r

Each Output

Circuit

Output

90%

C_L= 15pF

(See Note A)

10%

Note A: C_Lincludes probe and jig capacitance.

Figure 6. Common-Emitter Configuration

15V

Each Output

Circuit

90%

Output

10%

t_f

68Ω

4W

C_L= 15pF

(See Note A)

t_r

Note A: C_Lincludes probe and jig capacitance.

Figure 7. Emitter-Follower Configuration

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

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Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Typical Performance Characteristics

100k

V_CC=15V

T_A=25^oC

0.001µF

10k

0.01µF

1k

0.1µF

C_T=1µF

100

10

1k

10k

100k

1M

Timing Resistance (Ω)

Figure 8. Oscillator Frequency vs. R_Tand C_T

100

90

80

70

60

50

40

30

20

10

0

V_CC=15V

V_O=3V

T_A=25^oC

∆

1

10

100

1k

10k

100k

1M

Frequency (Hz)

Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

9

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Mechanical Dimensions

SOIC-16

Unit: mm(inch)

1.350(0.053)

1.750(0.069)

1.250(0.049)

1.650(0.065)

0.330(0.013)

0.510(0.020)

A

20:1

B

0.250(0.010)

0.400(0.016)

1.270(0.050)

0°

8°

R0.200(0.008)

0.200(0.008)

0.250(0.010)

0.050(0.002)

0.250(0.010)

5.800(0.228)

6.240(0.246)

C-C

50:1

3.800(0.150)

4.040(0.159)

B

20:1

8°

C

0.200(0.008)

φ

S 1.000(0.039)

3°

7°

Depth 0.200(0.008)

A

0.400(0.016)×45°

Note: Eject hole, oriented hole and mold mark is optional.

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

10

Data Sheet

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

AZ494B/D

Mechanical Dimensions (Continued)

DIP-16

Unit: mm(inch)

Note: Eject hole, oriented hole and mold mark is optional.

BCD Semiconductor Manufacturing Limited

Sep. 2009 Rev. 1. 3

11

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility foor use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

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Tel: +86-21-24162266, Fax: +86-21-24162277

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Fax: +86-755-8826 7865

Fax: +1-510-324-2788


型号：	AZ494DMTR
厂家：	DIODES INCORPORATED
描述：	Switching Regulator/Controller, Voltage-mode, 0.2A, 300kHz Switching Freq-Max, PDSO16 光电二极管
文件：	总12页 (文件大小：759K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AZ494DMTR [DIODES]

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