首页 |元器件品牌

BAT1000-13 [DIODES]

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, SOT-23, 3 PIN;
BAT1000-13
型号： BAT1000-13
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, SOT-23, 3 PIN

光电二极管
文件： 总3页 (文件大小：80K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SPICE MODEL: BAT1000  
BAT1000  
1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
·
Very Low Forward Voltage Drop  
SOT-23  
High Conductance  
A
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
For Use in DC-DC Converter, PCMCIA,  
and Mobile Telecommunications Applications  
·
Available in Lead Free/RoHS Compliant Version  
(Note 3)  
B
B
C
C
TOP VIEW  
D
Mechanical Data  
·
D
G
E
E
Case: SOT-23  
H
G
H
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
M
J
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
L
J
Terminals: Solderable per MIL-STD-202, Method 208  
K
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 5, on Page 3  
L
M
a
·
·
·
·
Polarity: See Diagram  
All Dimensions in mm  
Marking: K79 and Date Code, See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
28  
V
A
Average Rectified Current (Note 1)  
1.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
A
5.5  
Pd  
Power Dissipation (Note 1)  
500  
200  
mW  
Typical Thermal Resistance, Junction to Ambient Air  
(Note 1)  
RqJA  
°C/W  
Tj  
Operating Temperature Range  
Storage Temperature Range  
-40 to +125  
-40 to +150  
°C  
°C  
TSTG  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
IR = 300uA  
V(BR)R  
40  
Reverse Breakdown Voltage (Note 2)  
¾
¾
V
IF = 50mA  
IF = 100mA  
IF = 250mA  
IF = 500mA  
IF = 750mA  
IF = 1000mA  
IF = 1500mA  
270  
290  
340  
400  
450  
500  
600  
225  
235  
290  
340  
390  
420  
475  
mV  
Forward Voltage (Note 2)  
¾
VF  
VR = 30V  
IR  
Reverse Current (Note 2)  
Total Capacitance  
¾
¾
100  
mA  
VR = 0V, f = 1.0MHz  
VR = 25V, f = 1.0MHz  
¾
¾
175  
25  
¾
¾
pF  
pF  
CT  
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30245 Rev. 4 - 2  
1 of 3  
BAT1000  
www.diodes.com  
ã Diodes Incorporated  
10  
1.0  
0.75  
0.50  
0.25  
0
1.0  
0.1  
0.01  
0
25  
50  
75  
100  
125  
150  
0
0.2  
0.4  
0.6  
0.8  
1.0  
TT, TERMINAL TEMPERATURE (°C)  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
Fig. 1 Forward Current Derating Curve  
1000  
150  
125  
100  
100  
75  
10  
50  
25  
1.0  
1
20  
50  
40  
30  
10  
10  
VR, REVERSE VOLTAGE (V)  
Fig. 3 Typ. Total Capacitance vs Reverse Voltage  
15  
20  
25  
0
5
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Safe Operating Area  
Note: 1. Assumed application thermal conditions.  
qJA varies depending on application.  
R
DS30245 Rev. 4 - 2  
2 of 3  
BAT1000  
www.diodes.com  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
BAT1000-7  
SOT-23  
3000/Tape & Reel  
Notes:  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
5. For Lead Free/RoHS compliant version part number, please add "-F" suffix to the part number above. Example: BAT1000-7-F.  
Marking Information  
K79 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
M = Month ex: 9 = September  
K79  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30245 Rev. 4 - 2  
3 of 3  
www.diodes.com  
BAT1000  

相关型号：

BAT1000-7

 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

BAT1000-7-F

 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

BAT1000_1

 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

BAT1000_10

 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

BAT114-099

 Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators)
INFINEON

BAT114-099E6327

 Mixer Diode, High Barrier, Silicon, SMD, 4 PIN
INFINEON

BAT114-099E6433

 Mixer Diode, High Barrier, Silicon, SMD, 4 PIN
INFINEON

BAT114-099R

 Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators)
INFINEON

BAT114-099RE6327

 Mixer Diode, High Barrier, Silicon, SMD, 4 PIN
INFINEON

BAT114-099RE6433

 Mixer Diode, High Barrier, Silicon, SMD, 4 PIN
INFINEON

BAT120

 Schottky barrier double diodes
NXP

BAT120A

 Schottky barrier double diodes
NXP
©2020 ICPDF网 联系我们和版权申明