BAV103 [DIODES]

SURFACE MOUNT SWITCHING DIODE; 表面贴装开关二极管
BAV103
型号: BAV103
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

SURFACE MOUNT SWITCHING DIODE
表面贴装开关二极管

二极管 开关
文件: 总2页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV101 - BAV103  
SURFACE MOUNT SWITCHING DIODE  
Features  
·
·
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
A
B
·
·
For General Purpose Switching Applications  
High Conductance  
C
Mechanical Data  
MiniMELF  
·
·
Case: MiniMELF, Glass  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Dim  
A
Min  
3.30  
1.30  
0.28  
Max  
3.70  
1.60  
0.50  
B
·
·
·
Polarity: Cathode Band  
Marking: Cathode Band Only  
Weight: 0.05 grams (approx.)  
C
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
BAV101  
BAV102  
BAV103  
Unit  
VRRM  
Repetitive Peak Reverse Voltage  
120  
200  
250  
V
VRWM  
VR  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
100  
71  
150  
200  
141  
VR(RMS)  
IFM  
RMS Reverse Voltage  
106  
250  
V
mA  
mA  
A
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ t < 1.0s  
Power Dissipation  
IO  
125  
IFSM  
1.0  
Pd  
500  
mW  
K/W  
°C  
RqJA  
Tj , TSTG  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
300  
-65 to +175  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
IF = 100mA  
VFM  
Maximum Forward Voltage  
¾
1.0  
V
TA = 25°C  
TA = 100°C  
Maximum Peak Reverse Current  
@ Rated DC Blocking Voltage  
100  
15  
nA  
IRM  
¾
¾
¾
mA  
VR = 0, f = 1.0MHz  
Cj  
trr  
Junction Capacitance  
1.5  
50  
pF  
ns  
IF = IR = 30mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Valid provided that electrodes are kept at ambient temperature.  
DS12017 Rev. J-2  
Page 1 of 2  
BAV101-BAV103  
1000  
100  
10  
100  
Tj = 25°C  
10  
1
1.0  
0.1  
0.1  
0.01  
0.01  
0
1
2
0
100  
200  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 1 Forward Characteristics  
Tj, JUNCTION TEMPERATURE (°C)  
Fig. 2 Leakage Current vs Junction Temperature  
DS12017 Rev. J-2  
Page 2 of 2  
BAV101-BAV103  

相关型号:

BAV103,115

BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin
NXP

BAV103-13

Rectifier Diode, 1 Element, 0.125A, 250V V(RRM), Silicon, GLASS, MINIMELF-2
DIODES

BAV103-7

Rectifier Diode, 1 Element, 0.125A, 250V V(RRM), Silicon, GLASS, MINIMELF-2
DIODES

BAV103-GS08

Small Signal Switching Diodes, High Voltage
VISHAY

BAV103-GS18

Small Signal Switching Diodes, High Voltage
VISHAY

BAV103-TP

Small Signal Diodes
MCC

BAV103/D1

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, GLASS, MINIMELF-2
VISHAY

BAV103/D2

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, GLASS, MINIMELF-2
VISHAY
NXP
NXP

BAV103/R,115

BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin
NXP

BAV103/R,135

BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin
NXP