BC847PN_08 [DIODES]
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR; 互补对小信号表面贴装晶体管
| 型号： | BC847PN_08 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in one package
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 3 and 4)
•
•
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
•
•
•
•
•
•
C1
B2
E2
E1
B1
C2
Top View
Device Schematic
Maximum Ratings, NPN Section @TA = 25°C unless otherwise specified
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
50
45
Unit
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
6.0
V
100
200
200
mA
mA
mA
ICM
IEM
Maximum Ratings, PNP Section @TA = 25°C unless otherwise specified
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
-45
Unit
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
-5.0
V
-100
-200
-200
mA
mA
mA
ICM
IEM
Thermal Characteristics
Characteristic
Symbol
PD
Value
200
Unit
mW
°C/W
°C
Power Dissipation (Note 1) @ TA = 25°C Total Device
Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25°C
Operating and Storage Temperature Range
625
Rθ
JA
-65 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
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www.diodes.com
November 2008
© Diodes Incorporated
BC847PN
Document number: DS30278 Rev. 12 - 2
BC847PN
Electrical Characteristics, NPN Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
Min
50
45
6
200
Typ
—
—
—
290
Max
—
—
—
450
Unit
V
V
V
—
Test Condition
IC = 10μA, IB = 0
IC = 10mA, IB = 0
(Note 5)
(Note 5)
(Note 5)
(Note 5)
IE = 1μA, IC = 0
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
VCB = 30V
VCB = 30V, TA = 150°C
VCE = 5.0V, IC = 10mA, f = 100MHz
VCB = 10V, f = 1.0MHz
VCE = 5V, IC = 200µA, RG = 2.0kΩ,
f = 1.0kHz, Δf = 200Hz
90
200
250
600
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
(Note 5)
(Note 5)
(Note 5)
(Note 5)
—
—
mV
mV
mV
VCE(SAT)
VBE(SAT)
VBE(ON)
700
900
—
580
—
660
—
700
720
ICBO
ICBO
fT
—
—
—
—
15
5.0
nA
µA
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
100
—
300
3.5
—
6.0
MHz
pF
CCBO
Noise Figure
NF
—
2.0
10
dB
Electrical Characteristics, PNP Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
Min
-50
-45
-5
Typ
—
—
—
290
Max
—
—
—
475
Unit
V
V
V
—
Test Condition
IC = -10μA, IB = 0
IC = -10mA, IB = 0
(Note 5)
(Note 5)
(Note 5)
(Note 5)
IE = -1μA, IC = 0
220
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA, f = 100MHz
VCB = -10V, f = 1.0MHz
VCE = -5V, IC = -200µA, RG = 2.0kΩ,
f = 1.0kHz, Δf = 200Hz
-75
-250
-300
-650
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
(Note 5)
(Note 5)
(Note 5)
(Note 5)
—
—
mV
mV
mV
VCE(SAT)
VBE(SAT)
VBE(ON)
-700
-850
—
-950
-600
—
-650
—
-750
-820
ICBO
ICBO
fT
—
—
—
—
-15
-4.0
nA
µA
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
100
—
200
3
—
4.5
MHz
pF
CCBO
Noise Figure
NF
—
—
10
dB
Notes:
5. Short duration pulse test used to minimize self-heating effect.
250
1,000
200
100
150
100
50
10
1
R
= 625°C/W
JA
θ
0
0.01
0.1
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current (NPN)
1.0
10
100
0
40
80
120
160
C)
200
TA, AMBIENT TEMPERATURE (
°
Fig. 1 Power Dissipation vs. Ambient Temperature
(Total Device, Note 1)
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www.diodes.com
November 2008
© Diodes Incorporated
BC847PN
Document number: DS30278 Rev. 12 - 2
BC847PN
1,000
100
10
0.5
0.4
T
= 25°C
A
V
= 10V
CE
V
= 5V
CE
0.3
0.2
V
= 2V
CE
0.1
0
0.1
1.0
10
100
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (NPN)
Fig. 4 Typical Gain-Bandwidth Product
vs. Collector Current (NPN)
1,000
0.5
T
= 150°C
A
V
= 5V
CE
I
I
C
= 10
B
0.4
0.3
0.2
100
10
1
T
= 25°C
A
T
= -50°C
A
T
= 25°C
A
T
= 150°C
A
0.1
0
T
= -50°C
A
1,000
0.1
10
100
1
10
100
1
1,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP)
Fig. 5 Typical DC Current Gain vs. Collector Current (PNP)
1,000
V
= 5V
CE
100
10
10
-IC, COLLECTOR CURRENT (mA)
1
100
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current (PNP)
3 of 4
www.diodes.com
November 2008
© Diodes Incorporated
BC847PN
Document number: DS30278 Rev. 12 - 2
BC847PN
Ordering Information (Note 6)
Part Number
BC847PN-7-F
Case
SOT-363
Packaging
3000/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
K7P
M = Month (ex: 9 = September)
Date Code Key
Year
2001
2002
2003
2004
2005
2006
2007 2008
2009
2010
2011
2012
2013
2014
2015
Code
M
N
P
R
S
T
U
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-363
Min
0.10
1.15
2.00
Dim
A
B
C
D
F
H
J
K
L
Max
0.30
1.35
2.20
B C
0.65 Typ
0.40
1.80
0
0.90
0.25
0.10
0°
0.45
2.20
0.10
1.00
0.40
0.22
8°
H
K
M
M
α
J
L
D
F
All Dimensions in mm
Suggested Pad Layout
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
X
Y
0.42
0.6
C1
G
Z
C1
C2
1.9
0.65
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
www.diodes.com
November 2008
© Diodes Incorporated
BC847PN
Document number: DS30278 Rev. 12 - 2
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