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BSR43 [DIODES]

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; SOT89 NPN硅平面中功率晶体管
BSR43
型号： BSR43
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
SOT89 NPN硅平面中功率晶体管

晶体 小信号双极晶体管 局域网
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SOT89 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BSR43  
ISSUE 4 – MARCH 2001  
✪
C
COMPLEMENTARY TYPES – BSR33  
PARTMARKING DETAIL –  
AR4  
E
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
90  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Base Current  
IC  
1
A
IB  
100  
1
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
Tj:Tstg  
-65 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
90  
80  
5
V
IC=100µA  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
V
V
IC=10mA  
IE=10µA  
VCB=60V  
*
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
100  
50  
nA  
µA  
V
CB=60V, Tamb =125°C  
Collector-Emitter  
VCE(sat)  
VBE(sat)  
hFE  
0.25  
0.5  
V
V
IC =150mA, IB =15mA  
Saturation Voltage  
IC =500mA, IB =50mA  
Base-Emitter  
Saturation Voltage  
1.0  
1.2  
V
V
IC =150mA, IB =15mA  
I
C =500mA, IB =50mA  
Static Forward  
Current Transfer Ratio  
30  
100  
50  
I
I
I
C =100µA, VCE =5V  
C =100mA, VCE =5V  
C =500mA, VCE =5V  
300  
Output Capacitance  
Input Capacitance  
Transition Frequency  
Cobo  
Cibo  
fT  
12  
90  
pF  
VCB =10V, f=1MHz  
VEB =0.5V, f=1MHz  
pF  
100  
MHz  
IC=50mA, VCE=10V  
f =35MHz  
Turn-On Time  
Turn-Off Time  
Ton  
Toff  
250  
ns  
ns  
VCC =20V, IC =100mA  
I
B1 =IB2 =5mA  
1000  
*Measured under pulsed conditions.  
For typical characteristics graphs see FMMT493 datasheet.  
TBA  

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