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BSS84WT/R7 [DIODES]

P-CHANNEL ENHANCEMENT MODE MOSFET; P沟道增强型MOSFET
BSS84WT/R7
型号： BSS84WT/R7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

P-CHANNEL ENHANCEMENT MODE MOSFET
P沟道增强型MOSFET

晶体 晶体管 开关 光电二极管
文件： 总4页 (文件大小：143K)
中文：  中文翻译
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BSS84W  
P-CHANNEL ENHANCEMENT MODE MOSFET  
SOT- 323  
This is a P-channel, enhancement-mode MOSFET, housed in the industry-  
standard, SOT-323 (SC-70) package. This device is ideal for portable  
applications where board space is at a premium.  
3
FEATURES  
2
Low On-Resistance  
Low Gate Threshold Voltage  
Fast Switching  
1
Available in lead-free plating (100% matte tin finish)  
Drain  
3
APPLICATIONS  
Switching Power Supplies  
Hand-Held Computers, PDAs  
1
2
MARKING CODE: 84W  
Gate  
Source  
T = 25°C Unless otherwise noted  
MAXIMUM RATINGS  
J
Rating  
Symbol  
Value  
Units  
V
Drain-Source Voltage  
Drain-Gate Voltage (Note 1)  
Gate-Source Voltage  
Drain Current  
- 50  
- 50  
± 20  
V
V
V
DSS  
V
V
DGR  
GSS  
I
D
130  
200  
mA  
mW  
°C  
P
T
T
Total Power Dissipation (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
D
J
-55 to +150  
-55 to +150  
°C  
stg  
Note 1. R < 20K ohms  
GS  
THERMAL CHARACTERISTICS  
Symbol  
Characteristic  
Value  
625  
Units  
°C/W  
R
Thermal Resistance, Junction to Ambient (Note 2)  
thja  
Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout  
8/12/2005  
Page 1  
www.panjit.com  
BSS84W  
T = 25°C Unless otherwise noted  
J
ELECTRICAL CHARACTERISTICS  
OFF CHARACTERISTICS (Note 3)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max Units  
BV  
Drain-Source Breakdown Voltage  
I = -250µA, V = 0V  
-50  
-
-
-
-
-
-
V
DSS  
GS  
D
V
= -50V, V = 0V, T =25°C  
-
-
-
-
-15  
-60  
-0.1  
±10  
GS  
J
DS  
I
µA  
nA  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V
V
V
= -50V, V = 0V, T =125°C  
DS  
GS  
J
DSS  
= -25V, V = 0V, T =25°C  
DS  
GS  
J
I
= ±20V, V = 0V  
GSS  
GS  
DS  
ON CHARACTERISTICS (Note 3)  
Parameter  
Symbol  
Conditions  
Min  
-0.8  
-
Typ  
-1.44  
3.8  
-
Max Units  
-2.0  
10 Ohms  
Gate Threshold Voltage  
V
V
= V , I = -1mA  
V
GS(th)  
DS  
GS  
D
R
Static Drain-Source On-Resistance  
V
V
= -5V, I = -0.1A  
DS(ON)  
GS  
D
g
0.05  
-
S
Forward Transconductance  
= -25V, I = -0.1A  
FS  
DS  
D
DYNAMIC CHARACTERISTICS  
Parameter  
Input Capacitance  
Symbol  
Conditions  
Min  
Typ  
Max Units  
C
C
-
-
-
-
-
-
45  
25  
12  
pF  
pF  
pF  
iss  
V
V
= -25V,  
DS  
= 0V,  
Output Capacitance  
oss  
GS  
f = 1.0MHz  
C
Reverse Transfer Capacitance  
rss  
SWITCHING CHARACTERISTICS  
Parameter  
Turn-On Delay Time  
Turn-Off Delay Time  
Symbol  
Conditions  
Min  
Typ  
7.5  
25  
Max Units  
t
-
-
-
-
ns  
ns  
D(ON)  
V
= -30V, I = -0.27A,  
DD  
D
R
= 50ohm, V = -10V  
t
GEN  
GS  
D(OFF)  
Note 3. Short duration test pulse used to minimize self-heating  
8/12/2005  
Page 2  
www.panjit.com  
BSS84W  
ELECTRICAL CHARACTERISTIC CURVES  
TJ = 25°C Unless otherwise noted  
1
1
0.9  
VGS= 6V, 7V, 8V, 9V, 10V  
VDS =10V  
0.8  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
5.0V  
0.6  
0.4  
0.2  
0
4.0V  
3.0V  
25oC  
5
0
1
2
3
4
5
0
1
2
3
4
6
7
-VGS - Gate-to-Source Voltage (V)  
-VDS - Drain-to-Source Voltage (V)  
Fig. 1. Output Characteristics  
Fig. 2. Transfer Characteristics  
10  
8
10  
8
6
4
2
0
V
GS
= 4.5V  
6
Ids=-500mA  
4
VGS=10.0V  
2
Ids=-50mA  
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1
-ID - Drain Current (A)  
-VGS - Gate-to-Source Voltage (V)  
Fig. 3. On-Resistance vs. Drain Current  
Fig. 4. On-Resistance vs. G-S Voltage  
1.2  
10  
I =250 A  
µ
D
VGS = 0V  
1.1  
1
1
25oC  
0.1  
0.9  
0.01  
0.4  
0.8  
-50 -25  
0
25  
50  
75 100 125 150  
0.6  
0.8  
1
1.2  
1.4  
TJ - Junction Temperature (oC)  
-VSD - Source-to-Drain Voltage (V)  
Fig. 5. Threshold Voltage vs. Temperature  
8/12/2005  
Fig. 6. Sourse-Drain Diode Forward Voltage  
www.panjit.com  
Page 3  
BSS84W  
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS  
ORDERING INFORMATION  
BSS84W T/R7 - 7 inch reel, 3K units per reel  
BSS84W T/R13 - 13 inch reel, 10K units per reel  
Copyright PanJit International, Inc 2005  
The information presented in this document is believed to be accurate and reliable. The specifications and information  
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the  
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or  
systems. Pan Jit does not convey any license under its patent rights or rights of others.  
8/12/2005  
www.panjit.com  
Page 4  

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