DDTB122JC-13 [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3;型号: | DDTB122JC-13 |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 光电二极管 晶体管 |
文件: | 总3页 (文件大小:74K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODELS: DDTB113EC DDTB123EC DDTB143EC DDTB114EC DDTB122JC DDTB113ZC DDTB123YC DDTB133HC
DDTB123TC DDTB143TC DDTB114TC DDTB114GC
DDTB (xxxx) C
PNP PRE-BIASED 500 mA SOT-23
SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
A
Complementary NPN Types Available (DDTD)
Built-In Biasing Resistors, R1, R2
3
OUT
SOT-23
Min
Available in Lead Free/RoHS Compliant Version
(Note 2)
TOP VIEW
B
C
Dim
A
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
IN
2
1
GND
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
D
G
Mechanical Data
·
·
E
B
H
C
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
D
K
M
E
J
L
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
G
H
Terminals: Solderable per MIL-STD-202, Method 208
J
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 3
K
L
·
Marking: Date Code and Type Code (See Table Below &
Page 3)
M
OUT (3)
GND (1)
R1
a
(2) IN
·
·
Ordering Information (See Page 3)
Weight: 0.008 grams (approximate)
All Dimensions in mm
R2
P/N
R1 (NOM) R2 (NOM) Type Code
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
DDTB123TC
DDTB143TC
DDTB114TC
DDTB114GC
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
P60
P61
P62
P63
P64
P65
P66
P67
P69
P70
P71
P72
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCC
Value
Unit
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
-50
V
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
+10 to -10
+10 to -12
+10 to -30
+10 to -40
+5 to -5
+5 to -10
+5 to -12
+6 to -20
VIN
V
Input Voltage, (1) to (2)
DDTB123TC
DDTB143TC
DDTB114TC
DDTB114GC
VEBO (MAX)
-5
V
IC
Pd
Output Current
All
-500
200
mA
mW
°C/W
°C
Power Dissipation
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
625
-55 to +150
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30385 Rev. 3 - 2
1 of 3
DDTB (xxxx) C
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DDTB113EC
-0.5
-0.5
-0.5
-0.5
-0.5
-0.3
-0.3
-0.3
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
Vl(off)
VCC = -5V, IO = -100mA
¾
¾
V
Input Voltage
V
V
O = -0.3V, IO = -20mA
O = -0.3V, IO = -20mA
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
-3.0
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -10mA
VO = -0.3V, IO = -30mA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
IO/Il = -50mA/-2.5mA
Output Voltage
Input Current
-0.3V
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
-7.2
-3.8
-1.8
-0.88
-4.5
-7.2
-3.6
-2.4
VI = -5V
mA
mA
¾
VCC = -50V, VI = 0V
VO = -5V, IO = -50mA
IO(off)
Output Current
DC Current Gain
-0.5
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
33
39
47
56
47
56
56
56
Gl
¾
VCE = -10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1-Only, R2-Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
BVCBO
BVCEO
Min
-50
-40
Typ
¾
Max Unit
Test Condition
IC = -50mA
¾
¾
V
V
IC = -1mA
¾
I
E = -50mA
Emitter-Base Breakdown Voltage DDTB123TC
DDTB143TC
DDTB114TC
DDTB114GC
IE = -50mA
IE = -50mA
BVEBO
¾
-5
¾
¾
¾
¾
V
mA
mA
V
IE = -720mA
VCB = -50V
ICBO
Collector Cutoff Current
DDTB123TC
¾
-0.5
¾
¾
¾
-300
-0.5
-0.5
-0.5
-580
DDTB143TC
DDTB114TC
VEB = -4V
IEBO
Emitter Cutoff Current
DDTB114GC
Collector-Emitter Saturation Voltage
DDTB123TC
IC = -50mA, IB = -2.5mA
IC = -5mA, VCE = -5V
VCE(sat)
hFE
¾
-0.3
100
100
100
56
250
250
250
¾
600
600
600
¾
DDTB143TC
DC Current Transfer Ratio
¾
DDTB114TC
DDTB114GC
VCE = -10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
DS30385 Rev. 3 - 2
2 of 3
www.diodes.com
DDTB (xxxx) C
Ordering Information(Note 3)
Device
Packaging
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
DDTB113EC-7
DDTB123EC-7
DDTB143EC-7
DDTB114EC-7
DDTB122JC-7
DDTB113ZC-7
DDTB123YC-7
DDTB133HC-7
DDTB123TC-7
DDTB143TC-7
DDTB114TC-7
DDTB114GC-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DDTB114GC-7-F.
Marking Information
XXX = Product Type Marking Code, See Table on Page 1
YM = Date Code Marking
Y = Year ex: N = 2002
XXX
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30385 Rev. 3 - 2
3 of 3
DDTB (xxxx) C
www.diodes.com
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