DDTD122JU-13 [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3;型号: | DDTD122JU-13 |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 光电二极管 晶体管 |
文件: | 总3页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODELS: DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU
DDTD123YU DDTD133HU DDTD123TU DDTD143TU DDTD114TU DDTD114GU
DDTD (xxxx) U
NPN PRE-BIASED 500 mA SOT-323
SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
A
Complementary PNP Types Available (DDTB)
3 OUT
Built-In Biasing Resistors, R1, R2
SOT-323
Min
Available in Lead Free/RoHS Compliant Version (Note 2)
C
B
Dim
A
Max
0.40
1.35
2.20
0.25
2
1
GND
IN
B
1.15
G
H
Mechanical Data
·
·
C
2.00
Case: SOT-323
D
0.65 Nominal
K
J
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
M
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
L
D
F
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 3
J
K
0.90
0.25
0.10
0°
L
·
Marking: Date Code and Marking Code (See Diagrams &
Page 3)
M
OUT (3)
GND (1)
R1
·
·
Ordering Information (See Page 3)
Weight: 0.006 grams (approximate)
a
(2) IN
All Dimensions in mm
R2
P/N
R1 (NOM) R2 (NOM) MARKING
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
50
V
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
VIN
V
Input Voltage, (1) to (2)
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
VEBO (MAX)
5
V
IC
Pd
Output Current
All
500
200
mA
mW
°C/W
°C
Power Dissipation
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
625
-55 to +150
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30382 Rev. 3 - 2
1 of 3
DDTD (xxxx) U
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DDTD113EU
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Vl(off)
VCC = 5V, IO = 100mA
¾
¾
V
Input Voltage
V
V
O = 0.3V, IO = 20mA
O = 0.3V, IO = 20mA
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
IO/Il = 50mA/2.5mA
Output Voltage
Input Current
0.3V
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
VI = 5V
mA
mA
¾
VCC = 50V, VI = 0V
VO = 5V, IO = 50mA
IO(off)
Output Current
DC Current Gain
0.5
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
33
39
47
56
47
56
56
56
Gl
¾
VCE = 10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1-Only, R2-Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
BVCBO
BVCEO
Min
50
Typ
¾
Max Unit
Test Condition
I
C = 50mA
IC = 1mA
E = 50mA
¾
¾
V
V
40
¾
I
Emitter-Base Breakdown Voltage DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
IE = 50mA
IE = 50mA
BVEBO
¾
5
¾
¾
¾
¾
V
mA
mA
V
IE = 720mA
VCB = 50V
ICBO
Collector Cutoff Current
DDTD123TU
¾
0.5
¾
¾
¾
300
0.5
0.5
0.5
580
DDTD143TU
DDTD114TU
VEB = 4V
IEBO
Emitter Cutoff Current
DDTD114GU
Collector-Emitter Saturation Voltage
DDTD123TU
IC = 50mA, IB = 2.5mA
IC = 5mA, VCE = 5V
VCE(sat)
hFE
¾
0.3
100
100
100
56
250
250
250
¾
600
600
600
¾
DDTD143TU
DC Current Transfer Ratio
¾
DDTD114TU
DDTD114GU
VCE = 10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
DS30382 Rev. 3 - 2
2 of 3
www.diodes.com
DDTD (xxxx) U
(Note 3)
Ordering Information
Device
Packaging
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Shipping
DDTD113EU-7
DDTD123EU-7
DDTD143EU-7
DDTD114EU-7
DDTD122JU-7
DDTD113ZU-7
DDTD123YU-7
DDTD133HU-7
DDTD123TU-7
DDTD143TU-7
DDTD114TU-7
DDTD114GU-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: DDTD114GU-7-F.
Marking Information
XXX = Product Type Marking Code
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: N = 2002
XXX
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30382 Rev. 3 - 2
3 of 3
DDTD (xxxx) U
www.diodes.com
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