DMG1024UV [DIODES]

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET; 双N沟道增强型MOSFET


型号：	DMG1024UV
厂家：	DIODES INCORPORATED
描述：	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 双N沟道增强型MOSFET
文件：	总6页 (文件大小：165K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMG1024UV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 1)

ESD Protected Up To 2KV

•

Case: SOT-563

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Terminals: Finish ۛ Matte Tin annealed over Copper leadframe.

•

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.006 grams (approximate)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

G₁

S₁

D₂

G₂

S₂

D₁

ESD PROTECTED TO 2kV

TOP VIEW

BOTTOM VIEW

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

±6

Unit

Gate-Source Voltage

V_GSS

T_A= 25°C

T_A= 85°C

Steady

1.38

0.89

Continuous Drain Current (Note 3)

State

I_D

Pulsed Drain Current (Note 4)

I_DM

Thermal Characteristics

Characteristic

Power Dissipation (Note 3)

Symbol

P_D

Max

530

Unit

°C/W

°C

235

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 3)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

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April 2010

DMG1024UV

Document number: DS31974 Rev. 5 - 2

DMG1024UV

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

100

±1.0

μA

Zero Gate Voltage Drain Current T_J= 25°C

Gate-Source Leakage

V_DS= 20V, V_GS= 0V

V_GS= ±4.5V, V_DS= 0V

I_GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

1.0

0.45

0.6

0.75

V_GS(th)

V_DS= V_GS, I_D= 250μA

0.3

0.4

0.5

_GS= 4.5V, I_D= 600mA

V_GS= 2.5V, I_D= 500mA

V_GS= 1.8V, I_D= 350mA

V_GS= 1.7V, I_D= 140mA

V_GS= 1.5V, I_D= 100mA

V_DS= 10V, I_D= 400mA

V_GS= 0V, I_S= 150mA

Static Drain-Source On-Resistance

R_{DS (ON)}

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

1.4

0.7

|Y_fs|

V_SD

1.2

60.67

9.68

5.37

736.6

93.6

116.6

5.1

C_iss

C_oss

C_rss

Q_g

V_DS= 16V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

_GS= 4.5V, V_DS= 10V,

Gate-Source Charge

Q_gs

Q_gd

t_D(on)

t_r

I_D= 250mA

Gate-Drain Charge

Turn-On Delay Time

V_DD= 10V, V_GS= 4.5V,

R_L= 47Ω, R_G= 10Ω,

7.4

Turn-On Rise Time

26.7

12.3

Turn-Off Delay Time

t_D(off)

t_f

_D= 200mA

Turn-Off Fall Time

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

1.5

1.2

1.5

= 8.0V

= 4.5V

= 3.0V

= 5V

1.2

0.9

= 2.5V

= 2.0V

0.9

0.6

0.3

0.6

0.3

= 1.5V

= 150°C

= 125°C

= 85°C

= 25°C

= -55°C

= 1.2V

0.5

1.5

2.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_GS, GATE SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Transfer Characteristics

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April 2010

DMG1024UV

Document number: DS31974 Rev. 5 - 2

DMG1024UV

0.8

0.7

0.6

0.5

= 4.5V

= 150°C

0.6

0.5

0.4

0.3

0.2

= 125°C

= 85°C

= 1.8V

= 2.5V

= 25°C

0.3

0.2

= -55°C

= 4.5V

0.1

0.3

0.6

0.9

1.2

1.5

0.3

0.6

0.9

1.2

1.5

I_D, DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

0.8

0.6

0.4

0.2

1.7

1.5

1.3

1.1

= 2.5V

= 500mA

= 2.5V

= 4.5V

= 500mA

= 1.0A

0.9

= 4.5V

= 1.0A

0.7

0.5

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

Fig. 6 On-Resistance Variation with Temperature

1.6

1.2

= 25°C

= 250µA

0.8

0.4

-50 -25

75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

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April 2010

DMG1024UV

Document number: DS31974 Rev. 5 - 2

DMG1024UV

100

1,000

100

iss

= 150°C

= 125°C

oss

rss

= 85°C

= 25°C

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Capacitance

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

(t) = r(t) * R

θJA

= 260°C/W

θJA

D = 0.02

0.01 _{D = 0.01}

P(pk)

D = 0.005

- T = P * R (t)

θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number

Case

Packaging

DMG1024UV-7

SOT-563

3000 / Tape & Reel

Notes:

7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

NA1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

NA1

M = Month (ex: 9 = September)

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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April 2010

DMG1024UV

Document number: DS31974 Rev. 5 - 2

DMG1024UV

Package Outline Dimensions

SOT-563

Dim Min Max

Typ

0.15 0.30 0.20

1.10 1.25 1.20

1.55 1.70 1.60

0.50

0.90 1.10 1.00

1.50 1.70 1.60

0.55 0.60 0.60

0.10 0.30 0.20

0.10 0.18 0.11

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

2.2

1.2

0.375

0.5

1.7

0.5

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April 2010

DMG1024UV

Document number: DS31974 Rev. 5 - 2

DMG1024UV

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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April 2010

DMG1024UV

Document number: DS31974 Rev. 5 - 2

DMG1024UV [DIODES]

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