DMG6402LVT-7 [DIODES]
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | DMG6402LVT-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG6402LVT
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input Capacitance
ID
V(BR)DSS
RDS(on) max
TA = +25°C
Low On-Resistance
Fast Switching Speed
6A
5A
30m @ VGS = 10V
42m @ VGS = 4.5V
30V
Totally Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on) and yet maintain superior switching
Mechanical Data
)
Case: TSOT26
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Terminals: Finish – Tin Finish annealed over Copper leadframe.
DC-DC Converters
Power Management Functions
Backlighting
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
Drain
TSOT26
D
D
G
D
6
1
2
3
Body
Diode
Gate
D
S
5
4
Source
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMG6402LVT-7
DMG6402LVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
6402 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
6402
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
DMG6402LVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
TA = +25°C
A = +70°C
Steady
State
6.0
4.8
A
A
A
A
ID
ID
ID
ID
T
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
TA = +25°C
TA = +70°C
TA = +25°C
7.5
5.9
t<10s
Steady
State
5.0
4.0
TA = +70°C
TA = +25°C
TA = +70°C
6
4.8
t<10s
Maximum Body Diode Forward Current (Note 5)
2
A
A
IS
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
31
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
1.75
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
1.1
72
50
23
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
BVDSS
IDSS
1
VGS = 0V, ID = 250μA
DS = 30V, VGS = 0V
μA
nA
V
IGSS
100
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1
1.5
22
2
V
VGS(th)
VDS = VGS, ID = 250μA
30
42
VGS = 10V, ID = 7A
Static Drain-Source On-Resistance
RDS(ON)
m
32
VGS = 4.5V, ID = 5.6A
VDS = 5V, ID = 7A
VGS = 0V, IS = 1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
10
S
V
|Yfs|
VSD
0.75
1.0
498
52
Ciss
Coss
Crss
RG
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
45
2.4
11.4
1.4
2
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 15V, ID = 5.8A
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(on)
tr
Turn-On Delay Time
3.4
6.2
13.9
2.8
Turn-On Rise Time
VDD = 15V, VGS = 10V,
RL = 2.6Ω, RG = 3Ω
nS
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
DMG6402LVT
30
25
20
16
V
= 8.0V
GS
V
= 4.5V
= 4.0V
GS
V
= 5V
DS
V
GS
GS
20
15
12
8
V
= 3.5V
T
= 150°C
10
A
T
= 125°C
A
V
V
V
= 3.0V
= 2.8V
= 2.5V
GS
GS
GS
4
0
T
= 85°C
A
5
0
T
= 25°C
A
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.08
0.06
0.08
0.07
V
= 4.5V
GS
T
= 150°C
A
0.06
0.05
0.04
0.03
0.02
T
= 125°C
A
T
= 85°C
= 25°C
A
0.04
V
= 4.5V
= 8.0V
GS
T
A
V
GS
T
= -55°C
A
0.02
0
0.01
0
0
5
10
15
20
25
30
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
= 4.5V
= 5A
GS
I
1.3
1.1
0.9
D
V
= 10V
GS
I
= 10A
V
= 4.5V
= 5A
D
GS
I
D
V
= 10V
GS
I
= 10A
D
0.7
0.5
0.01
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
DMG6402LVT
20
18
16
14
12
2.0
1.6
I
= 1mA
D
I
= 250µA
D
1.2
0.8
10
T
= 25°C
A
8
6
4
0.4
0
2
0
-50 -25
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1
1.2
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1,000
10
8
C
iss
V
I
= 15V
DS
6
4
= 5.8A
D
100
C
oss
C
rss
2
0
f = 1MHz
10
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * R
JA
D = 0.005
RJA= 54°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 11 Transient Thermal Resistance
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© Diodes Incorporated
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
DMG6402LVT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
TSOT26
Dim Min Max Typ
D
e1
A
—
1.00
—
—
—
A1 0.01 0.10
A2 0.84 0.90
D
E
E1
b
c
e
—
—
—
—
—
—
2.90
2.80
1.60
—
E
E1
L2
c
0.30 0.45
0.12 0.20
—
—
—
L
—
—
0.95
1.90
—
4x
1
e
e1
L
6x b
0.30 0.50
L2
θ
θ1
—
0°
4°
—
8°
12°
0.25
4°
—
A2
A1
A
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
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© Diodes Incorporated
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
DMG6402LVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
相关型号：
DMG6601LVT-7
Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOT-26, 6 PIN
DIODES
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