DMG7401SFG-7 [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMG7401SFG-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3018SFV
DMG7401SFG
P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
ID max
Low RDS(ON) – Ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
BVDSS
RDS(ON) max
TA = +25°C
13mΩ @ VGS = -10V
25mΩ @ VGS = -4.5V
-9.8A
-7.0A
-30V
Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMG7401SFGQ)
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: PowerDI3333-8
Backlighting
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0174 grams (Approximate)
Power Management Functions
DC-DC Converters
Drain
PowerDI3333-8
Pin 1
S
S
S
G
Gate
D
D
Gate
Protection
Diode
ESD PROTECTED
D
Source
D
Top View
Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number
DMG7401SFG-7
DMG7401SFG-13
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
G75 = Product Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 for 2017)
WW = Week Code (01 to 53)
G75
PowerDI is a registered trademark of Diodes Incorporated.
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www.diodes.com
September 2017
© Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 12 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3018SFV
DMG7401SFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±25
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
-9.8
-7.7
A
A
ID
ID
Continuous Drain Current (Note 6) VGS = -10V
-13.5
-10.8
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Notes 7 & 8)
-3.0
-80
-14
104
A
A
IS
IDM
IAR
EAR
A
Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.94
0.6
137
82
Unit
TA = +25°C
Total Power Dissipation (Note 5)
TA = +70°C
W
PD
RθJA
PD
Steady State
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
2.2
TA = +25°C
Total Power Dissipation (Note 6)
TA = +70°C
W
1.3
Steady State
60
36
3.0
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-30
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
μA
μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
—
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.7
—
—
9
-3.0
11
13
25
—
V
mΩ
S
VGS(TH)
RDS(ON)
|Yfs|
VDS = VGS, ID = -250μA
VGS = -20V, ID = -12A
VGS = -10V, ID = -9A
VGS = -4.5V, ID = -5A
VDS = -5V, ID = -10A
—
Static Drain-Source On-Resistance
10
17
21
—
—
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
2246
352
294
5.1
2987
468
391
10
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
20.5
41
30
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
58
Qg
VDS = -15V, ID = -12A
7.6
—
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
8.0
—
Turn-On Delay Time
11.3
15.4
38.0
22.0
23
Turn-On Rise Time
31
VDD = -15V, VGS = -10V,
RL = 1.25Ω, RG = 3Ω
Turn-Off Delay Time
61
tD(OFF)
tF
Turn-Off Fall Time
38
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
—
—
—
-0.7
20
-1.0
31
V
VSD
tRR
VGS = 0V, IS = -1A
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
ns
nC
IS = -9.5A, dI/dt = 100A/μs
9.5
18
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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September 2017
© Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 12 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3018SFV
DMG7401SFG
30
25
20
30
V
= -5.0V
25
20
DS
V
= -10V
GS
V
= -5.0V
GS
V
= -4.5V
GS
15
10
V
= -4.0V
15
10
GS
V
V
= -3.5V
= -3.0V
GS
T
= 150C
A
T
= 85C
A
T
= 125C
A
5
0
5
0
T
= 25C
A
T
= -55C
A
GS
0
0.5
1.0
1.5
2.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.03
0.02
0.03
0.02
T
= 150C
A
V
= -4.5V
GS
T
= 125C
= 85C
A
T
A
T
= 25C
A
T
= -55C
A
0.01
0.01
0
0
0
5
10
15
20
25
(A)
30
0
5
10
15
20
25
30
-I , DRAIN SOURCE CURRENT
-ID, DRAIN SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
0.040
0.036
0.032
1.7
1.5
0.028
0.024
0.020
0.016
0.012
1.3
1.1
0.9
V
I
= -4.5V
GS
= -5A
D
V
I
= -10V
GS
= -10A
0.008
0.004
D
0.7
0.5
0
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 12 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3018SFV
DMG7401SFG
3.0
2.5
30
25
20
2.0
1.5
1.0
15
10
0.5
0
5
0
-50 -25
TA, AMBIENT TEMPERATURE (°
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.4
0.6
0.8
1.0
1.2
C )
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
10
8
f = 1MHz
C
iss
6
1,000
4
2
0
C
oss
C
rss
100
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
Fig. 10 Gate-Charge Characteristics
400
350
100
10
R
DS(ON)
Single Pulse
Limited
R
R
T
= 135C/W
JA
= r * R
JA(t)
(t)
JA
- T = P * R
300
250
200
150
100
J
A
JA(t)
DC
P
= 10s
W
1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
0.1
W
T
T
= 150°C
J(max)
= 25°C
P
= 100µs
W
A
V
= -10V
50
0
GS
Single Pulse
DUT on 1 * MRP Board
0.01
1E-05 1E-04 0.001 0.01 0.1
1
10 100 1,000
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 12 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3018SFV
DMG7401SFG
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * RθJA
RθJA= 135℃/W
Single Pulse
Duty Cycle, D = t1 /
t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
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© Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 12 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3018SFV
DMG7401SFG
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
A3
A1
PowerDI3333-8
Dim Min Max Typ
0.75 0.85 0.80
A1 0.00 0.05 0.02
A
Seating Plane
A
A3
b
0.203
0.27 0.37 0.32
D
L( 4x)
E4
b2 0.15 0.25 0.20
3.25 3.35 3.30
D2 2.22 2.32 2.27
3.25 3.35 3.30
D2
D
1
Pin #1 ID
E
E2 1.56 1.66 1.61
E3 0.79 0.89 0.84
E4 1.60 1.70 1.65
b2( 4x)
E
e
L
0.65
0.35 0.45 0.40
E3
E2
L1
z
0.39
0.515
L1( 3x)
All Dimensions in mm
8
z( 4x)
b
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
X3
X2
Dimensions Value (in mm)
8
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
Y4
X
X1
X2
X3
Y
X1
Y1
Y2
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
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© Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 12 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMP3018SFV
DMG7401SFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
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© Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 12 - 3
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