DMG7401SFGQ-7 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMG7401SFGQ-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：441K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG7401SFGQ
P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features and Benefits
ID Max
Low RDS(ON) – Ensures On-State Losses Are Minimized
Small form factor thermally efficient package enables higher
density end products
V(BR)DSS
RDS(ON) Max
TA = +25°C
13mΩ @ VGS = -10V
25mΩ @ VGS = -4.5V
-9.8A
-7.0A
-30V
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: POWERDI®3333-8
Backlighting
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0174 grams (Approximate)
Power Management Functions
DC-DC Converters
POWERDI3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
ESD PROTECTED
Gate Protection
Diode
S
Top View
Equivalent Circuit
Bottom View
Ordering Information (Note 5)
Part Number
Case
Packaging
DMG7401SFGQ-7
DMG7401SFGQ-13
POWERDI3333-8
POWERDI3333-8
2,000/Tape & Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
DMG7401SFGQ
Marking Information
G75 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 for 2010)
WW = Week Code (01 – 53)
G75
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
±25
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
-9.8
-7.7
A
A
ID
ID
Continuous Drain Current (Note 7) VGS = -10V
-13.5
-10.8
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 8 & 9)
-3.0
-80
14
A
A
IS
IDM
IAR
EAR
A
Repetitive Avalanche Energy (Notes 8 & 9) L = 1mH
104
mJ
Thermal Characteristics
Characteristic
Symbol
Value
0.94
0.6
137
82
Units
TA = +25°C
Total Power Dissipation (Note 6)
W
PD
RθJA
PD
TA = +70°C
Steady State
t<10s
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
2.2
TA = +25°C
TA = +70°C
Steady State
t<10s
W
1.3
60
36
3.0
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
RθJC
-55 to +150
TJ, TSTG
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. I and E rating are based on low frequency and duty cycles to keep T = +25°C.
AR AR
J
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© Diodes Incorporated
DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
DMG7401SFGQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-30
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
μA
μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
—
±10
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.7
—
—
9
-3.0
11
13
25
—
V
mΩ
S
VGS(th)
RDS(ON)
|Yfs|
VDS = VGS, ID = -250μA
VGS = -20V, ID = -12A
VGS = -10V, ID = -9A
VGS = -4.5V, ID = -5A
VDS = -5V, ID = -10A
—
Static Drain-Source On-Resistance
10
17
21
—
—
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
2,246
352
294
5.1
2,987
468
391
10
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
20.5
41
30
nC
nC
nC
nC
nS
nS
nS
nS
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
58
—
Qg
VDS = -15V, ID = -12A
7.6
Qgs
Qgd
tD(on)
tr
—
Gate-Drain Charge
8.0
Turn-On Delay Time
11.3
15.4
38.0
22.0
23
Turn-On Rise Time
31
VDD = -15V, VGS = -10V,
RL = 1.25Ω, RG = 3Ω,
Turn-Off Delay Time
61
tD(off)
tf
Turn-Off Fall Time
38
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
—
—
—
-0.7
20
-1.0
31
V
VSD
trr
VGS = 0V, IS = -1A
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
nS
nC
IS = -9.5A, dI/dt = 100A/μs
9.5
18
Qrr
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
DMG7401SFGQ
30
25
20
30
25
V
= -5.0V
DS
V
= 10V
GS
20
V
= 5.0V
GS
V
= 4.5V
GS
15
10
V
= 4.0V
GS
15
10
V
V
= 3.5V
GS
T
= 150C
A
T
= 85C
A
T
= 125C
A
5
0
5
0
T
= 25C
A
T
= -55C
A
= 3.0V
GS
0
0.5
1.0
1.5
2.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.03
0.02
0.03
0.02
T
T
= 150C
A
V
= -4.5V
GS
= 125C
= 85C
A
T
A
T
= 25C
A
T
= -55C
A
0.01
0.01
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
0.040
0.036
0.032
1.7
1.5
0.028
0.024
0.020
0.016
0.012
1.3
1.1
0.9
V
I
= -4.5V
GS
= -5A
D
V
I
= -10V
GS
= -10A
0.008
0.004
D
0.7
0.5
0
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
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DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
DMG7401SFGQ
3.0
2.5
30
25
20
2.0
1.5
1.0
15
10
0.5
0
5
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
10
8
f = 1MHz
C
iss
6
1,000
4
2
0
C
oss
C
rss
100
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
Fig. 10 Gate-Charge Characteristics
100
10
400
350
R
DS(on)
Single Pulse
Limited
R
R
T
= 135C/W
JA
= r * R
JA(t)
(t)
JA
- T = P * R
300
250
200
150
100
J
A
JA(t)
DC
P
= 10s
W
1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
0.1
W
TJ(max) = 150°C
TA = 25°C
P
= 100µs
W
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
50
0
0.01
1E-05 1E-04 0.001 0.01 0.1
1
10 100 1,000
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
Fig. 12 SOA, Safe Operation Area
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DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
DMG7401SFGQ
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * RJA
RJA = 135°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
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DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
DMG7401SFGQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI3333-8
POWERDI3333-8
Dim Min Max Typ
A3
A1
A
0.75 0.85 0.80
A
A1 0.00 0.05 0.02
Seating Plane
A3
b
b2
D
0.203
0.27 0.37 0.32
0.20
3.25 3.35 3.30
D
L( 4x)
D2 2.22 2.32 2.27
3.25 3.35 3.30
E2 1.56 1.66 1.61
0.65
e1 0.79 0.89 0.84
D2
E
1
e
Pin #1 ID
L
L1
z
0.35 0.45 0.40
0.39
b2( 4x)
L1( 3x)
E
0.515
e1
All Dimensions in mm
E2
8
z( 4x)
b
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
POWERDI3333-8
X3
Dimensions Value (in mm)
X2
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
8
X1
X2
X3
Y
X1
Y1
Y2
Y1
Y2
Y3
Y3
Y
X
1
C
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DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
DMG7401SFGQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
相关型号：
DMG7430LFG
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DIODES
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