DMMT3906WQ-7-F [DIODES]
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon,;
| 型号： | DMMT3906WQ-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMMT3906W
40V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
BVCEO > -40V
C = -200mA High Collector Current
Pair of PNP Transistors That Are Intrinsically Matched (Note 1)
2% Matching on Current Gain (hFE
2mV Matching on Base-Emitter Voltage (VBE
•
•
Case: SOT363
I
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin Finish. Solderable per
)
•
•
)
e3
Fully Internally Isolated in a Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)
Halogen and Antimony Free. "Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 5)
MIL-STD-202, Method 208
•
Weight: 0.006 grams (approximate)
Applications
•
•
•
Current Mirrors
Differential and Instrumentation Amplifiers
Comparators
C2
E2
E1
SOT363
B2
B1
C1
Top View
Device Schematic and Pin-Out
Top View
Ordering Information (Note 4 & 5)
Part Number
DMMT3906W-7-F
DMMT3906WQ-7-F
Compliance
AEC-Q101
Automotive
Marking
K4B
K4B
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
3,000
7
7
8
8
3,000
Notes:
1. Intrinsically matched pair as this is built with adjacent die from the same wafer.
2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
6. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K4B = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 2 = February)
Date Code Key
2010
2016
2017
Year
2011
2012
2013
2014
2015
Code
X
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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© Diodes Incorporated
DMMT3906W
Document number: DS30312 Rev. 12 - 2
DMMT3906W
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-40
V
-5.0
-200
V
mA
Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 7) Total Device
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Symbol
Value
200
Unit
mW
°C/W
°C
PD
625
Rθ
JA
-65 to +150
TJ, TSTG
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
V
3A
C
Note:
7. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics – Total Device
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© Diodes Incorporated
DMMT3906W
Document number: DS30312 Rev. 12 - 2
DMMT3906W
Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
TYP
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-40
-40
-5.0
⎯
⎯
⎯
⎯
⎯
⎯
V
V
BVCBO
BVCEO
BVEBO
ICEX
⎯
⎯
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
V
⎯
IE = -100μA, IC = 0
-50
-50
nA
nA
VCE = -30V, VEB(OFF) = 3.0V
VCE = -30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
⎯
ON CHARACTERISTICS (Note 9)
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = - 1.0V
IC = -100mA, VCE = -1.0V
⎯
⎯
60
80
100
60
DC Current Gain
300
hFE
⎯
⎯
⎯
⎯
30
-250
-400
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
mV
mV
VCE(SAT)
VBE(SAT)
⎯
⎯
⎯
0.65
⎯
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
-850
-950
MATCHING CHARACTERISTICS
1
1
2
2
%
DC Current Gain Matching (Note 10)
hFE1 / hFE2
⎯
⎯
IC = -2mA, VCE = -5V
VBE1
-
mV
Base-Emitter Voltage Matching (Note 11)
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
IC = -2mA, VCE = -5V
VBE2
VCE(SAT)1
/
1
1
2
2
%
%
⎯
⎯
IC = -10mA, IB = -1.0mA
IC = -10mA, IB = -1.0mA
VCE(SAT)2
VBE(SAT)1
VBE(SAT)2
/
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
⎯
⎯
⎯
⎯
⎯
⎯
4.5
10.0
12
pF
pF
Cobo
Cibo
hie
⎯
⎯
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Capacitance
Input Impedance
2.0
0.1
100
3.0
kΩ
x 10-4
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
10
hre
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
400
60
hfe
⎯
hoe
μS
VCE = -20V, IC = -10mA,
f = 100MHz
Current Gain-Bandwidth Product
Noise Figure
250
MHz
dB
fT
⎯
⎯
⎯
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
NF
4.0
⎯
SWITCHING CHARACTERISTICS
Delay Time
⎯
⎯
⎯
⎯
35
35
ns
ns
ns
ns
td
tr
⎯
⎯
⎯
⎯
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time
Storage Time
225
75
ts
tf
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
10. Is the ratio of one transistor compared to the other transistor.
11. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor.
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© Diodes Incorporated
DMMT3906W
Document number: DS30312 Rev. 12 - 2
DMMT3906W
Typical Electrical Characteristics (@TA = +25°C unless otherwise specified.)
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DMMT3906W
Document number: DS30312 Rev. 12 - 2
DMMT3906W
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Dim Min Max Typ
A
B
C
D
F
0.10 0.30 0.25
1.15 1.35 1.30
2.00 2.20 2.10
0.65 Typ
0.40 0.45 0.425
1.80 2.20 2.15
B C
H
H
J
0
0.10 0.05
K
J
K
L
M
0.90 1.00 1.00
0.25 0.40 0.30
0.10 0.22 0.11
M
0°
8°
-
α
L
D
F
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
X
Y
C1
C2
0.42
0.6
1.9
C1
G
Y
Z
0.65
X
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© Diodes Incorporated
DMMT3906W
Document number: DS30312 Rev. 12 - 2
DMMT3906W
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS30312 Rev. 12 - 2
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