DMN1016UCB6 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN1016UCB6 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：605K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN1016UCB6
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low QG & QGD
ID
V(BR)DSS
RDS(ON)
TA = +25°C
Small Footprint
Low Profile 0.62mm Height
6.6A
6.1A
20mΩ @ VGS = 4.5V
23mΩ @ VGS = 2.5V
12V
Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Case: U-WLB1510-6
Terminal Connections: See Diagram Below
Terminals: Finished – SnAgCu Ball
Weight: 0.0018 grams (Approximate)
Applications
Battery Management
Load Switch
Battery Protection
U-WLB1510-6
Top View
Ordering Information (Note 4)
Part Number
DMN1016UCB6-7
Case
U-WLB1510-6
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1510-6
PW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2016
© Diodes Incorporated
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
DMN1016UCB6
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
12
Units
V
V
Gate-Source Voltage
±8
VGSS
Steady
State
5.5
4.2
TA = +25°C
TA = +70°C
A
Continuous Drain Current (Note 5) VGS =4.5V
ID
Steady
State
6.6
5.3
TA = +25°C
TA = +70°C
A
A
Continuous Drain Current (Note 6) VGS =4.5V
Pulsed Drain Current (Note 7)
ID
30
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
PD
Value
Units
W
0.92
1.47
Total Power Dissipation (Note 6)
W
PD
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
136
°C/W
°C/W
°C
RθJA
94
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
12
—
—
—
—
—
—
1.0
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 9.6V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
nA
(@TC = +25°C)
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.4
—
—
—
—
—
—
0.6
16
1.0
20
23
—
V
VGS(TH)
RDS(ON)
|YFS
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 1.5A
VGS = 2.5V, ID = 1.5A
VDS = 6V, ID = 1.5A
VGS = 0V, IS = 1.5A
Static Drain-Source On-Resistance
mΩ
20
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
14
S
V
|
0.7
8
1.0
—
VSD
QRR
tRR
nC
ns
VDD = 6V, IF = 1.5A,
di/dt =200A/µs
43.6
—
—
—
—
—
—
—
—
—
—
—
—
550
310
55
—
423
238
41
3
pF
pF
pF
Ω
CISS
COSS
CRSS
RG
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
VDS = 0V, VGS = 0V, f = 1MHz
4.2
0.6
0.4
5
5.5
—
nC
nC
nC
ns
ns
ns
ns
QG
VGS = 4.5V, VDS = 6V,
ID =1.5A
QGS
QGD
tD(ON)
tR
—
Gate-Drain Charge
8
Turn-On Delay Time
10
25
10
—
Turn-On Rise Time
VDS = 6V, VGS = 4.5V,
40
—
RG = 4Ω, ID = 1.5A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz (0.071-mm thick) Cu.
7. 300ms pulse, pulse duty cycle<=2%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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October 2016
© Diodes Incorporated
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
DMN1016UCB6
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20
18
16
14
12
10
8
V
= 8.0V
V = 5.0V
DS
GS
V
= 2.0V
GS
V
= 4.5V
GS
V
= 2.5V
GS
V
= 4.0V
GS
V
= 1.5V
GS
6
6.0
T
= 150°C
T
= 85°C
A
4
4.0
A
T
= 25°C
T
= 125°C
A
A
2
2.0
V
= 1.0V
T
= -55°C
GS
A
0
0.0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.025
0.023
0.021
0.019
0.017
0.015
0.1
0.08
0.06
0.04
0.02
0
V
= 2.5V
GS
I
= 1.5A
D
V
GS
= 4.5V
0
2
4
6
8
10 12 14 16 18 20
0
1
2
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristics
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.03
0.028
0.026
0.024
0.022
0.02
2
V
= 4.5V
GS
T
= 150°C
A
1.6
T
= 125°C
A
T
= 85°C
A
V
= 2.5V
GS
= 2.0A
I
D
1.2
T
= 25°C
A
0.018
0.016
0.014
0.012
0.01
V
= 4.5V
= 5A
GS
T
= -55°C
A
I
D
0.8
0.4
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
Figure 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
DMN1016UCB6
0.04
0.03
0.02
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 2.5V
= 2A
GS
I
= 1mA
D
I
D
I
= 250µA
D
V
= 4.5V
= 5A
GS
I
D
0.01
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
Figure 8 Gate Threshold Variation vs. Ambient Temperature
20
18
16
14
12
10
8
1000
f = 1MHz
C
iss
C
oss
T
= 150°C
A
100
C
rss
T
A
= 125°C
A
T
A
= 25°C
A
6
T
= 85°C
4
T
= -55°C
2
0
0
10
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
8
6
4
2
600
500
400
300
200
100
0
Single Pulse
R
R
T
= 125°C/W
JA
JA
(t) = R
*r(t)
(t)
JA
- T = P* R
J
A
JA
V
I
= 6V
DS
= 1.5A
D
0
0
1
2
3
4
5
6
7
8
1E-05
0.001
t1, PULSE DURATION TIME (sec)
Figure 12 Single Pulse Maximum Power Dissipation
0.1
10
1000
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
DMN1016UCB6
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 125°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
DMN1016UCB6
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-WLB1510-6
E
Ø b (4x)
U-WLB1510-6
Dim
Min
Max
Typ
A
A2
b
D
E
—
—
0.27
1.40
0.90
—
0.62
—
0.37
1.50
1.00
—
—
0.038
0.32
1.50
1.00
0.50
e
e
D
e
All Dimensions in mm
e
A2
A
Seating Plane
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-WLB1510-6
D
Value
(in mm)
Dimensions
C
C1
D
0.50
1.00
0.25
C1
C
C
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© Diodes Incorporated
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
DMN1016UCB6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
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