DMN1019UVT [DIODES]
12V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN1019UVT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 12V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN1019UVT
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
ID
TA = +25°C
10.7A
9.8A
Low On-Resistance
V(BR)DSS
RDS(ON) MAX
ESD Protected Gate
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
12V
9.1A
8.0A
Mechanical Data
5.3A
Case: TSOT26
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208 e3
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Applications
Load Switch
DC-DC Converters
Power Management Functions
D
TSOT26
D
D
D
S
1
2
3
6
5
4
D
G
G
Gate Protection
Diode
S
ESD PROTECTED
Top View
Pin Configuration
Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number
DMN1019UVT-7
DMN1019UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
DMN
M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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April 2015
© Diodes Incorporated
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
DMN1019UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
12
Units
V
V
Gate-Source Voltage
±8
VGSS
Steady
State
TA = +25°C
10.7
8.6
A
A
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 5) VGS = 4.5V
12.7
10.1
t<10s
ID
IDM
IS
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
Avalanche Current (Note 6) L = 0.1mH
70
2
A
A
9.7
4.7
A
IAS
EAS
Avalanche Energy (Note 6) L =0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
1.73
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
1.11
72.2
37.5
TA = +70°C
Steady State
t<10s
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
14.4
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
12
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
µA
±2
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.35
—
—
0.53
7
0.8
10
12
14
18
41
1.2
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 9.7A
VGS = 2.5V, ID = 9A
VGS = 1.8V, ID = 8.1A
VGS = 1.5V, ID = 4.5A
VGS = 1.2V, ID = 2.4A
VGS = 0V, IS = 10A
8
—
Static Drain-Source On-Resistance
10
14
28
0.8
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
2588
415
394
1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
50.4
28.0
3.2
Total Gate Charge (VGS = 8V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
Qg
nC
VDS = 4V, ID = 10A
Qgs
Qgd
tD(ON)
tD(OFF)
tR
5.6
Gate-Drain Charge
4.7
Turn-On Delay Time
ns
ns
ns
ns
ns
nC
32.2
3.7
Turn-Off Delay Time
VDD = 4V, VGEN = 5V, ID = 10A,
RG = 1Ω, RL = 0.4Ω
Turn-On Rise Time
11.6
20.55
4.5
Turn-Off Fall Time
tF
Body Diode Reverse Recovery Time
tRR
IF = 10A, di/dt = 100A/μs
IF = 10A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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April 2015
© Diodes Incorporated
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
DMN1019UVT
25.0
20.0
15.0
10.0
5.0
10
8
VDS=5.0V
VGS=1.5V
VGS=2.0V
VGS=2.5V
VGS=3.0V
6
VGS=4.5V
VGS=8.0V
4
VGS=1.2V
85℃
25℃
150℃
125℃
2
VGS=1.0V
4
-55℃
0
0.0
0
0.5
1
1.5
2
0
1
2
3
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0.02
0.015
0.01
0.005
0
0.05
0.04
0.03
0.02
0.01
0
ID=9.7A
VGS=1.5V
VGS=2.5V
VGS=4.5V
ID=8.1A
ID=4.5A
1
2
3
4
5
6
7
8
0
4
8
12
16
20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs Drain Current and
Gate Voltage
Figure 4 Typical On-Resistance vs Drain Current and
Gate Voltage
0.015
0.01
0.005
0
2
VGS=4.5V
1.8
1.6
1.4
1.2
1
85℃
150℃
125℃
VGS=2.5V, ID=9A
VGS=4.5V, ID=9.7A
25℃
VGS=1.8V, ID=8.1A
VGS=1.5V, ID=4.5A
-55℃
0.8
0.6
0.4
-50 -25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with Temperature
50
75 100 125 150
0
3
6
9
12
15
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs Drain Current and
Temperature
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April 2015
© Diodes Incorporated
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
DMN1019UVT
0.02
0.015
0.01
0.005
0
0.9
0.6
0.3
0
VGS=1.8V, ID=8.1A
VGS=1.5V, ID=4.5A
ID=1mA
ID=250µA
VGS=4.5V, ID=9.7A
VGS=2.5V, ID=9A
-50 -25
0
25
50
75
100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Theshold Variation vs Junction
Temperature
20
15
10
5
100000
10000
1000
100
VGS=0V
150℃
125℃
85℃
TA=85℃
TA=150℃
10
TA=25℃
TA=125℃
TA=-55℃
25℃
1
0
1
2
3
4
5
6
7
8
9
10 11 12
0
0.2
0.4
0.6
0.8
1
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 10 Typical Drain-Source Leakge Current vs
Voltage
Figure 9 Diode Forward Voltage vs Current
10000
1000
100
8
7
6
5
4
3
2
1
0
f=1MHz
Ciss
Coss
VDS=4V, ID=10A
Crss
0
10
20
30
Qg (nC)
40
50
60
0
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Gate Charge
Figure 11 Typical Junction Capacitance
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April 2015
© Diodes Incorporated
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
DMN1019UVT
100
10
RDS(ON)
Limited
DC
PW=10s
PW=1s
1
PW=100ms
PW=10ms
PW=1ms
PW=100µs
TJ(Max)=150℃
TA=25℃
0.1
0.01
VGS=4.5V
Single Pulse
DUT on 1*MRP Board
0.01 0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
1
D=0.9
D=0.7
D=0.5
0.1
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
RθJA (t)=r(t) * RθJA
RθJA=107℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
0.001
0.0001
0.01
0.1
1
10
100
1000
10000
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
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© Diodes Incorporated
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
DMN1019UVT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
D
Dim Min Max Typ
e1
A
A1
A2
D
E
E1
b
1.00
0.01 0.10
0.84 0.90
2.90
2.80
1.60
E
E1
L2
c
0.30 0.45
L
c
0.12 0.20
4x1
e
e
e1
L
0.95
1.90
6x b
0.30 0.50
A2
A1
L2
θ
θ1
A
0.25
4°
0°
4°
8°
12°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
0.950
0.700
1.000
3.199
X
Y1
Y
Y1
Y (6x)
X (6x)
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© Diodes Incorporated
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
DMN1019UVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
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