DMN1019USN-13 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN1019USN-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN1019USN
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
ID
TA = +25°C
9.3A
•
•
•
•
•
Low On-Resistance
V(BR)DSS
RDS(ON) MAX
ESD Protected Gate
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
8.5A
12V
7.9A
6.9A
4.6A
Mechanical Data
•
•
•
•
Case: SC59
Description
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Method 208
e3
•
•
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
Applications
•
•
•
Load Switch
DC-DC Converters
Power Management Functions
SC59
D
S
D
G
Gate Protection
Diode
S
G
ESD PROTECTED
Top View
Pin Configuration
Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number
DMN1019USN-7
DMN1019USN-13
Case
SC59
SC59
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
N7
M = Month ex: 9 = September
Date Code Key
Year
2013
2014
2015
2016
2017
2018
2019
2020
Code
A
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN1019USN
Document number: DS36999 Rev. 2 - 2
DMN1019USN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
12
Units
V
V
Gate-Source Voltage
±8
VGSS
TA = +25°C
TA = +70°C
Steady
State
9.3
7.4
A
A
ID
Continuous Drain Current (Note 6) VGS = 4.5V
TA = +25°C
A = +70°C
11
8.8
t<10s
ID
IDM
IS
T
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
70
2
A
A
Thermal Characteristics
Characteristic
Symbol
Value
0.68
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
RθJA
PD
0.4
160
115
TA = +70°C
Steady state
t<10s
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
1.2
TA = +25°C
TA = +70°C
Steady state
t<10s
W
0.83
96
68
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
18
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
12
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS =12V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
µA
±2
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.35
—
—
0.53
7
0.8
10
12
14
18
41
—
V
VGS(th)
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 9.7A
VGS = 2.5V, ID = 9A
VGS = 1.8V, ID = 8.1A
VGS = 1.5V, ID = 4.5A
VGS = 1.2V, ID = 2.4A
VDS = 4V, ID = 9.7A
VGS = 0V, IS = 10A
8
—
Static Drain-Source On-Resistance
10
14
28
28
0.8
mΩ
RDS(ON)
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
S
V
IYfsI
VSD
—
1.2
2426
396
375
1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS = 0V, VGS = 0V, f = 1MHz
50.6
27.3
3.4
Total Gate Charge (VGS = 8V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
Qg
nC
V
DS = 4V, ID = 10A
Qgs
Qgd
tD(ON)
tD(OFF)
tr
5.2
Gate-Drain Charge
7.6
Turn-On Delay Time
ns
ns
ns
ns
22.2
57.6
16.8
Turn-Off Delay Time
VDD = 4V, VGEN = 5V, ID = 10A,
RG = 1Ω, RL = 0.4Ω
Turn-On Rise Time
Turn-Off Fall Time
tf
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA
.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMN1019USN
Document number: DS36999 Rev. 2 - 2
DMN1019USN
20.0
16.0
12.0
8.0
20
18
16
14
12
10
8
V
= 8.0V
GS
V
= 5.0V
DS
V
= 3.0V
GS
V
V
= 2.0V
= 1.5V
GS
GS
V
=1.2V
GS
T
= 150°C
A
T
T
= 85°C
A
6
T
= 125°C
A
T
= 25°C
A
4
4.0
V
= 1.0V
GS
2
= -55°C
A
0
0.2
0.0
0
1
2
3
4
5
0.4
0.6
0.8
1
1.2
1.4
1.6
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.016
0.015
0.014
0.013
0.012
0.011
0.01
0.03
I
= 9.7A
D
0.025
0.02
I
= 8.1A
D
V
= 1.5V
GS
I
= 4.5A
D
0.015
V
= 2.5V
GS
0.01
0.009
0.008
0.007
0.006
V
= 4.5V
GS
0.005
0
0
1
2
3
4
5
6
7
8
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
0.015
0.014
0.013
0.012
0.011
0.01
1.6
1.4
1.2
1
V
= 4.5V
GS
V
= 2.5V
= 9A
GS
I
D
T
= 150°C
= 85°C
A
V
= 4.5V
GS
I
= 9.7A
D
T
= 125°C
A
T
A
V
I
= 1.5V
GS
= 4.5A
D
T
= 25°C
A
0.009
0.008
0.007
0.006
0.005
T
= -55°C
A
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT (A)
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN1019USN
Document number: DS36999 Rev. 2 - 2
DMN1019USN
0.02
0.018
0.016
0.014
0.012
0.01
0.8
0.6
0.4
0.2
0
V
= 1.5V
GS
I
= 4.5A
D
V
= 2.5V
GS
I
= 9A
D
I
= 1mA
D
V
= 4.5V
GS
I
= 250µA
D
I
= 9.7A
D
0.008
0.006
0.004
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
C)
TJ, JUNCTION TEMPERATURE (
°
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
20
18
16
14
12
10
8
10000
f = 1MHz
C
iss
T
= 150°C
A
1000
T
= 125°C
A
T
A
= 25°C
A
C
oss
T
= 85°C
6
A
C
rss
T
= -55°C
4
2
0
0
100
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
12
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
8
6
4
2
100
10
R
DS(on)
Limited
DC
= 10s
V
I
= 4V
DS
P
W
= 10A
D
P
= 1s
W
1
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
0.1
T
= 150°C
J(max)
T
= 25°C
A
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMN1019USN
Document number: DS36999 Rev. 2 - 2
DMN1019USN
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * Rθ
RθJA = 60°C/W
Duty Cycle, D = t1/ t2
JA
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
1
10
100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SC59
Dim
A
B
Min
0.35
1.50
2.70
-
Max
0.50
1.70
3.00
-
Typ
0.38
1.60
2.80
0.95
1.90
3.00
0.05
1.10
0.40
0.15
0.75
-
C
B
C
D
G
H
G
H
-
-
2.90
0.013 0.10
3.10
J
K
J
K
1.00
0.35
0.10
0.70
0°
1.30
0.55
0.20
0.80
8°
M
N
L
M
N
α
L
D
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
X
Y
C
E
3.4
0.8
1.0
2.4
Z
C
1.35
X
E
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Document number: DS36999 Rev. 2 - 2
DMN1019USN
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS36999 Rev. 2 - 2
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