DMN1025UFDB-7 [DIODES]

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	DMN1025UFDB-7
厂家：	DIODES INCORPORATED
描述：	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总6页 (文件大小：272K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMN1025UFDB

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Low On-Resistance

Low Input Capacitance

Low Profile, 0.6mm Max Height

ESD protected gate.

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

I_{D MAX}

T_A= +25°C

Device

V_(BR)DSS

R_{DS(ON) max}

6.9A

6.3A

5.5A

25mΩ @ V_GS= 4.5V

30mΩ @ V_GS= 2.5V

38mΩ @ V_GS= 1.8V

N-Channel

12V

Description

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.



Case: U-DFN2020-6 Type B

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020

Applications

Terminals: Finish NiPdAu over Copper leadframe. Solderable per



Load Switch

Power Management Functions

Portable Power Adaptors

MIL-STD-202, Method 208



Terminals Connections: See Diagram Below

Weight: 0.0065 grams (approximate)

U-DFN2020-6

Type B

ESD PROTECTED

Gate Protection

Diode

Gate Protection

Diode

Pin1

N-CHANNEL MOSFET

Bottom View

Internal Schematic

Ordering Information (Note 4)

Part Number

DMN1025UFDB-7

DMN1025UFDB-13

Case

Packaging

3000/Tape & Reel

10000/Tape & Reel

U-DFN2020-6 Type B

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/quality/product_compliance_definitions/.

Marking Information

NB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Date Code Key

Year

2012

2013

2014

2015

2016

2017

2018

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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April 2014

DMN1025UFDB

Document number: DS36668 Rev. 2 - 2

DMN1025UFDB

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±10

V_GSS

T_A= +25°C

_A= +70°C

Steady

State

6.9

5.5

I_D

Continuous Drain Current (Note 5) V_GS= 4.5V

T_A= +25°C

T_A= +70°C

8.8

7.0

t < 5s

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Avalanche Current (Note 6) L = 0.1mH

I_S

9.8

4.8

I_DM

I_AS

E_AS

Avalanche Energy (Note 6) L = 0.1mH

Thermal Characteristics

Characteristic

Symbol

Value

1.7

2.9

Units

Steady State

Total Power Dissipation (Note 5)

P_D

t < 5s

Steady State

t < 5s

Thermal Resistance, Junction to Ambient (Note 5)

R_θJA

°C/W

°C

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

R_θJC

-55 to 150

T_J,T_STG

Electrical Characteristics N-CHANNEL (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

1.0

±10

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 12V, V_GS= 0V

V_GS= ±8V, V_DS= 0V

μA

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.4

—

0.7

mΩ

V_GS(th)

R_{DS (ON)}

V_SD

V_DS= V_GS, I_D= 250μA

1.2

V_GS= 4.5V, I_D= 5.2A

Static Drain-Source On-Resistance

_GS= 2.5V, I_D= 4.8A

_GS= 1.8V, I_D= 2.5A

Diode Forward Voltage

V_GS= 0V, I_S= 5.4A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

Ω

C_iss

C_oss

C_rss

R_g

917

120

102

11.4

12.6

23.1

1.3

V_DS= 6V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= 4.5V)

Total Gate Charge (V_GS= 8V)

Gate-Source Charge

Q_g

_DS= 10V, I_D= 6.8A

Q_gs

Q_gd

t_D(on)

t_r

1.6

Gate-Drain Charge

3.0

Turn-On Delay Time

9.3

Turn-On Rise Time

_DD= 6V, V_GS= 4.5V,

17.2

2.8

Turn-Off Delay Time

R_L= 1.1ꢀ, R_G= 1ꢀ

t_D(off)

t_f

trr

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

6.8

1.1

I_S= 5.4A, dI/dt = 100A/μs

Qrr

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. I_ASand E_ASrating are based on low frequency and duty cycles to keep T_J= +25°C

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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April 2014

DMN1025UFDB

Document number: DS36668 Rev. 2 - 2

DMN1025UFDB

15.0

12.0

9.0

= 5.0V

= 10V

= 4.5V

= 3.0V

= 2.5V

= 2.0V

= 1.8V

= 1.2V

= 150°C

6.0

= 125°C

= 85°C

= 1.0V

3.0

= 25°C

= -55°C

0.0

0.5

1.5

2.5

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

Figure 2 Typical Transfer Characteristics

0.03

0.025

0.02

0.1

0.08

0.06

0.04

0.02

= 5.2A

= 1.8V

= 2.5V

= 4.5V

0.015

= 2.5A

0.01

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristic

I_D, DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.03

0.025

0.02

1.8

1.6

1.4

1.2

= 4.5V

= 150°C

= 2.5V

= 4.8A

= 125°C

= 85°C

= 1.8V

= 2.5A

= 4.5V

= 5.2A

= 25°C

0.015

0.01

= -55°C

0.8

0.6

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 6 On-Resistance Variation with Temperature

75 100 125 150

I_D, DRAIN CURRENT (A)

C)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

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April 2014

DMN1025UFDB

Document number: DS36668 Rev. 2 - 2

DMN1025UFDB

0.04

0.035

0.03

0.8

0.6

0.4

0.2

= 1.8V

= 2.5A

= 2.5V

= 4.8A

= 1mA

0.025

0.02

= 250µA

= 4.5V

= 5A

0.015

0.01

-50 -25

75 100 125 150

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 7 On-Resistance Variation with Temperature

75 100 125 150

T_J, JUNCTION TEMPERATURE (C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature



1000

DS(on)

Limited

100

= 150°C

= 125°C

= 85°C

= 10s

= 1s

= 25°C

= 100ms

= 10ms

0.1

= -55°C

= 1ms

T_J(max)= 150°C

T_A= 25°C

V_GS= 4.5V

Single Pulse

DUT on 1 * MRP Board

= 100µs

0.01

0.3

0.6

0.9

1.2

1.5

0.1

100

V_SD, SOURCE-DRAIN VOLTAGE (V)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

Figure 10 SOA, Safe Operation Area

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

R_JA(t) = r(t) * R_

R_JA= 178°C/W

Duty Cycle, D = t1/ t2

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1000

t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

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April 2014

DMN1025UFDB

Document number: DS36668 Rev. 2 - 2

DMN1025UFDB

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

U-DFN2020-6

Type B

Dim

Min

Max

Typ

SEATING PLANE

0.545 0.605 0.575



0.05 0.02

0.13



Pin#1 ID

0.20 0.30 0.25

1.95 2.075 2.00

0.45

0.50 0.70 0.60

0.65



1.95 2.075 2.00

0.90 1.10 1.00

0.15

0.25 0.35 0.30

0.225



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

1.67

0.20

0.40

1.0

0.45

0.37

0.70

0.65

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April 2014

DMN1025UFDB

Document number: DS36668 Rev. 2 - 2

DMN1025UFDB

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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April 2014

DMN1025UFDB

Document number: DS36668 Rev. 2 - 2

DMN1025UFDB-7 [DIODES]

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