DMN1029UFDB-7 [DIODES]

N-CHANNEAL ENHANCEMENT MODE MOSFET;


型号：	DMN1029UFDB-7
厂家：	DIODES INCORPORATED
描述：	N-CHANNEAL ENHANCEMENT MODE MOSFET
文件：	总6页 (文件大小：449K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMN1029UFDB

N-CHANNEAL ENHANCEMENT MODE MOSFET

Product Summary

Features



Low On-Resistance

Low Input Capacitance

Low Profile, 0.6mm Max Height

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

I_{D MAX}

T_A= +25°C

V_(BR)DSS

R_{DS(ON) Max}

5.6A

5.1A

4.5A

3.7A

29mΩ @ V_GS= 4.5V

34mΩ @ V_GS= 2.5V

44mΩ @ V_GS= 1.8V

65mΩ @ V_GS= 1.5V

12V

Description

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.



Case: U-DFN2020-6

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish NiPdAu over Copper Leadframe. Solderable

Applications

per MIL-STD-202, Method 208



Load Switch

Power Management Functions

Portable Power Adaptors



Terminals Connections: See Diagram Below

Weight: 0.0065 grams (Approximate)

U-DFN2020-6

Bottom View

Pin1

Q1 N-CHANNEL MOSFET

Q2 N-CHANNEL MOSFET

Internal Schematic

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN1029UFDB -7

DMN1029UFDB -13

U-DFN2020-6

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

D5 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: C = 2015)

M = Month (ex: 9 = September)

Date Code Key

Year

2015

2016

2017

2018

2019

2020

2021

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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February 2015

DMN1029UFDB

Document number: DS37711 Rev. 2 - 2

DMN1029UFDB

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±8

V_GSS

T_A= +25C

T_A= +70C

T_A= +25C

T_A= +70C

Steady

State

5.6

4.4

I_D

Continuous Drain Current (Note 5) V_GS= 4.5V

7.2

5.8

t < 5s

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10s pulse, Duty Cycle = 1%)

Avalanche Current (L = 0.1mH)

I_S

I_DM

I_AS

Avalanche Energy (L = 0.1mH)

E_AS

Thermal Characteristics

Characteristic

Symbol

P_D

Value

Unit

Steady State

1.4

Total Power Dissipation (Note 5)

t < 5s

Steady State

t < 5s

2.2

Thermal Resistance, Junction to Ambient (Note 5)

R_

°C/W

°C

Thermal Resistance, Junction to Case

R_

Operating and Storage Temperature Range

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition



1.0

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 12V, V_GS= 0V

V_GS= ±8V, V_DS= 0V

μA

±100

I_GSS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.4



mΩ

V_GS(TH)

R_DS(ON)

V_SD



0.6

V_DS= V_GS, I_D= 250μA

V_GS= 4.5V, I_D= 5A

V_GS= 2.5V, I_D= 4.6A

V_GS= 1.8V, I_D= 4.1A

V_GS= 1.5V, I_D= 2A

V_GS= 0V, I_S= 1A

1.2

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

914

132

119

1.26

10.5

19.6

1.2



Ω

C_iss

C_oss

C_rss

R_g

V_DS= 6V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= 4.5V)

Total Gate Charge (V_GS= 8V)

Gate-Source Charge

Q_g

V_DS= 6V, I_D= 6.5A

Q_gs

Q_gd

t_D(ON)

t_R

1.6

Gate-Drain Charge

5.0

Turn-On Delay Time

10.5

16.6

4.1

Turn-On Rise Time

V_DD= 6V, V_GS= 4.5V,

R_L= 1.2Ω, R_G= 1Ω

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Notes:

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

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February 2015

DMN1029UFDB

Document number: DS37711 Rev. 2 - 2

DMN1029UFDB

20.0

18.0

16.0

14.0

12.0

10.0

8.0

V_GS=1.8V

V_GS=2.0V

V_DS= 5.0V

V_GS=1.5V

V_GS=2.5V

V_GS=3.0V

V_GS=4.5V

T_A=150℃

T_A=125℃

V_GS=1.2V

V_GS=8.0V

6.0

T_A=25℃

T_A=-55℃

4.0

T_A=85℃

2.0

V_GS=1.0V

0.0

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

0.05

0.04

0.03

0.02

0.01

0.1

0.08

0.06

0.04

0.02

V_GS=1.5V

I_D=5.0A

I_D=4.1A

V_GS=1.8V

V_GS=2.5V

V_GS=4.5V

I_D=2.0A

I_D=4.6A

11 13 15 17 19 21

I_D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

0.03

1.8

1.6

1.4

1.2

V_GS= 4.5V

T_A=150℃

0.025

0.02

V_GS=2.5V, I_D=3.0A

T_A=125℃

T_A=85℃

0.015

0.01

T_A=25℃

T_A=-55℃

V_GS=4.5V, I_D=5.0A

0.8

0.6

0.005

-50

-25

100 125 150

10 12 14 16 18 20

I_D,DRAIN CURRENT(A)

T_J, JUNCTION TEMPERATURE (℃)

Figure 5. Typical On-Resistance vs. Drain Current and

Temperature

Figure 6. On-Resistance Variation with Temperature

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February 2015

DMN1029UFDB

Document number: DS37711 Rev. 2 - 2

DMN1029UFDB

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.04

0.035

0.03

0.025

0.02

0.015

0.01

0.005

V_GS=2.5V, I_D=3.0A

I_D=1mA

V_GS=4.5V, I_D=5.0A

I_D=250μA

-50 -25

T_J,JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

1000

100

f=1MHz

C_iss

V_GS=0V

T_A=150℃

V_GS=0V

T_A=85℃

C_oss

V_GS=0V

T_A=125℃

V_GS=0V

T_A=25℃

C_rss

V_GS=0V, T_A=-55℃

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE Voltage (V)

Figure 10. Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

100

P_W=1ms

P_W=100μs

R_DS(ON)Limited

P_W=100

V_DS=6V, I_D=6.5A

P_W=1s

P_W=10ms

T_J(Max)=150℃

T_A=25℃

Single Pulse

DUT on

1*MRP board

V_GS=4.5V

P_W=10s

0.1

0.01

0.1

100

Qg, TOTAL GATE CHARGE (nC)

Figure 11. Gate Charge

V_DS,DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

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February 2015

DMN1029UFDB

Document number: DS37711 Rev. 2 - 2

DMN1029UFDB

D=0.5

D=0.3

D=0.9

D=0.7

0.1

D=0.1

D=0.05

D=0.02

D=0.01

0.01

D=0.005

R_θJA(t)=r(t) * R_θJA

R_θJA=171℃/W

Duty Cycle, D=t1 / t2

D=Single Pulse

0.0001

0.001

1E-05

0.001

0.01

0.1

100

1000

t1, PULSE DURATION TIME (sec)

Figure 13. Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

U-DFN2020-6

Type B

Dim

Min

Max Typ

SEATING PLANE

0.545 0.605 0.575



0.05 0.02



0.13

Pin#1 ID

0.20 0.30 0.25

1.95 2.075 2.00

0.45

0.50 0.70 0.60

 

0.65



1.95 2.075 2.00

0.90 1.10 1.00

0.15

0.25 0.35 0.30

0.225



All Dimensions in mm

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February 2015

DMN1029UFDB

Document number: DS37711 Rev. 2 - 2

DMN1029UFDB

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

1.67

0.20

0.40

1.0

0.45

0.37

0.70

0.65

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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February 2015

DMN1029UFDB

Document number: DS37711 Rev. 2 - 2

DMN1029UFDB-7 [DIODES]

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