DMN10H170SVT-13 [DIODES]
Low Gate Threshold Voltage;
| 型号： | DMN10H170SVT-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Low Gate Threshold Voltage 栅 |
| 文件： | 总6页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID max
TA = +25°C
Low Gate Threshold Voltage
V(BR)DSS
RDS(ON) max
Low Input Capacitance
160mΩ @ VGS = 10V
200mΩ @ VGS = 4.5V
2.6A
2.3A
Fast Switching Speed
100V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Power Management Functions
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
D
TSOT26
D
1
2
3
6
D
D
S
D
G
5
4
G
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN10H170SVT-7
DMN10H170SVT-13
TSOT26
TSOT26
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TSOT26
11N = Product Type Marking Code
YM = Date Code Marking
Y or ꢀ = Year (ex: B = 2014)
M = Month (ex: 9 = September)
11N
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
Code
B
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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February 2015
© Diodes Incorporated
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
DMN10H170SVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Units
100
±20
V
V
Gate-Source Voltage
VGSS
Steady
State
TA = +25°C
TA = +70°C
2.6
2.1
A
Continuous Drain Current (Note 6) VGS = 10V
ID
11.2
2.0
A
A
Pulsed Drain Current (10μs pulse, duty cycle ≦1%)
IDM
IS
Maximum Body Diode Continuous Current (Note 6)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.2
Units
(Note 5)
Total Power Dissipation
(Note 6)
W
PD
1.7
(Note 5)
101
73
Thermal Resistance, Junction to Ambient
(Note 6)
R
JA
°C/W
°C
(Note 6)
Thermal Resistance, Junction to Case
15
R
JC
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
V
BVDSS
IDSS
1.0
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
2.0
115
124
0.9
3.0
160
200
1.0
V
mΩ
V
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.0A
VGS = 4.5V, ID = 5.0A
VGS = 0V, IS = 10A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1,167
36
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
25
Reverse Transfer Capacitance
Gate Resistance
1.3
4.9
9.7
2.0
2.0
10
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
nS
VDS = 80V, ID = 12.8A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
11
Turn-On Rise Time
VDD = 50V, VGS = 10V,
42
RG = 25Ω, ID = 12.8A
Turn-Off Delay Time
tD(off)
12
30
35
Turn-Off Fall Time
tf
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
trr
VGS = 0V, IS=12.8A, di/dt=100A/µs
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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February 2015
© Diodes Incorporated
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
DMN10H170SVT
10
8
10
8
V
= 5.0V
DS
V
= 10V
GS
T
= 150°C
= 125°C
A
V
= 7.0V
V
= 8.0V
GS
GS
6
4
6
V
= 9.0V
GS
T
A
T
= 85°C
A
V
= 6.0V
GS
4
V
= 5.0V
GS
T
= 25°C
A
V
= 4.5V
GS
V
= 3.5V
= 3.0V
GS
V
= 4.0V
2
2
0
GS
T
= -55°C
A
V
GS
0
0
0.5
1
1.5
2
0
1
2
3
4
5
6
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Vgs= 4.5V
0.2
0.18
0.16
0.14
0.12
0.4
0.35
0.3
V
= 1.8V
GS
I
= 150°C
D
V
= 2.5V
GS
I
= 125°C
D
0.25
0.2
I
= 85°C
D
0.1
V
= 4.5V
GS
0.08
0.15
0.1
I
= 25°C
D
0.06
0.04
I
= -55°C
D
0.05
0
0.02
0
0
2
4
6
8
10
1
2
3
4
5
6
7
8
9
10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Id, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain-Source and Temperature
2.8
2.4
2
0.3
0.25
0.2
V
I
= 10V
GS
= 10A
V
I
= 10V
D
GS
= 10A
D
V
I
= 5V
GS
= 10A
V
= 5V
GS
D
1.6
0.15
I
= 5A
D
1.2
0.1
0.05
0
0.8
0.4
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
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February 2015
© Diodes Incorporated
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
DMN10H170SVT
3
2.5
2
10
9
8
7
6
5
4
3
2
1
0
I
= 250µA
D
1.5
1
T = 25C
A
0.5
0
-25
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75
100
-50
125 150
0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
10
9
8
7
6
5
4
3
2
f = 1MHz
V
I
= 80V
DS
C
iss
= 12.8A
D
1000
100
C
oss
C
rss
10
1
1
0
0
10
20
30
40
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
100
10
R
DS(on)
Limited
1
DC
P
= 10s
W
P
= 1s
W
P
0.1
0.01
= 100ms
W
TJ(max) = 150°C
TA = 25°C
P
= 10ms
W
P
= 1ms
W
VGS = 10V
Single Pulse
P
= 100µs
W
DUT on 1 * MRP Board
0.001
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
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February 2015
© Diodes Incorporated
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
DMN10H170SVT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * Rthja
Rthja = 101°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
0.0001
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
Dim Min Max Typ
D
e1
A
1.00
A1 0.01 0.10
A2 0.84 0.90
D
E
E1
b
c
e
2.90
2.80
1.60
0.95
E
E1
L2
c
0.30 0.45
0.12 0.20
L
4x1
e
6x b
e1
L
1.90
0.30 0.50
A2
A1
A
L2
θ
θ1
0.25
4°
0°
4°
8°
12°
All Dimensions in mm
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February 2015
© Diodes Incorporated
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
DMN10H170SVT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
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