DMN2991UDA-7B [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN2991UDA-7B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2991UDA
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
ID Max
BVDSS
RDS(ON) Max
TA = +25°C
Very Low Gate Threshold Voltage, 1.0V Maximum
Low Input Capacitance
0.45A
0.40A
0.34A
0.30A
0.99Ω @ VGS = 4.5V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
Fast Switching Speed
20V
Ultra-Small Surface Mount Package 0.8mm x 0.6mm
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3 )
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN0806-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe; Solderable
e4
per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
Pin1
S2
D1
G2
D1
D2
S2
G1
G2
ESD PROTECTED
Gate Protection
Diode
Gate Protection
Diode
S1
D2
S1
G1
Pin Configuration
Top View
Top View
Bottom View
Device Symbol
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2991UDA-7B
X2-DFN0806-6
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
CN = Product Type Marking Code
CN
Top View
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© Diodes Incorporated
DMN2991UDA
Document number: DS41328 Rev. 2 - 2
DMN2991UDA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
VGSS
0.45
0.36
1.2
TA = +25°C
Steady
State
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
A
A
ID
TA = +70C
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
0.31
Unit
W
Total Power Dissipation (Note 5)
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
404
-55 to +150
°C/W
°C
RθJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
VDS = 16V, VGS = 0V
VGS = ±5V, VDS = 0V
±10
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
—
—
—
—
0.78
0.47
0.63
0.84
1.1
1.0
0.99
1.2
1.8
2.4
1.0
V
Ω
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 0V, IS = 10mA
Static Drain-Source On-Resistance
0.6
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
21.5
4.9
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 16V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3.7
0.94
0.35
0.07
0.08
5.6
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
ns
nC
Qg
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VDD = 10V, VGS = 4.5V,
RL = 47Ω, Rg = 10Ω,
ID = 200mA
4.9
Turn-Off Delay Time
Turn-Off Fall Time
60.6
27.6
12.3
1.1
tD(OFF)
tF
Reverse Recovery Time
Reverse Recovery Charge
tRR
IF = 1.0A, di/dt = 100A/μs
IF = 1.0A, di/dt = 100A/μs
—
—
QRR
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN2991UDA
Document number: DS41328 Rev. 2 - 2
DMN2991UDA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0
VGS=2.0V
VDS = 5V
VGS = 2.5V
VGS = 1.8V
VGS = 3.0V
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 8.0V
125℃
85℃
VGS = 1.5V
VGS = 1.3V
VGS = 1.2V
VGS = 1.1V
150℃
25℃
-55℃
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
2
1.8
1.6
1.4
1.2
1
ID = 100mA
1.5
1
VGS = 1.5V
ID = 50mA
ID = 20mA
0.8
0.6
0.4
0.2
0
VGS = 1.8V
0.5
0
VGS = 4.5V
VGS = 2.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
1
1.8
1.6
1.4
1.2
1
VGS = 4.5V
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
0.8
0.6
0.4
0.2
0
125℃
150℃
VGS = 1.8V, ID = 20mA
85℃
25℃
VGS = 1.5V, ID = 10mA
-55℃
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
0
0.1
0.2
0.3
0.4
0.5
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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DMN2991UDA
Document number: DS41328 Rev. 2 - 2
DMN2991UDA
1.5
1.2
0.9
0.6
0.3
0
1.4
1.2
1
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
ID = 1mA
0.8
0.6
0.4
0.2
0
ID = 250μA
VGS = 4.5V, ID = 100mA
-50
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
0.5
0.4
0.3
0.2
0.1
0
100
10
1
f=1MHz
VGS = 0V
Ciss
Coss
TA = 85℃
TA = 125℃
TA = 150℃
Crss
TA = 25℃
TA = -55℃
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
1
8
7
6
5
4
3
2
1
0
RDS(ON) Limited
PW =1µs
PW =10ms
PW =100ms
PW =1ms
PW =10ms
PW =100ms
0.1
VDS = 10V, ID = 250mA
DC
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 4.5V
0.01
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
1
10
100
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMN2991UDA
Document number: DS41328 Rev. 2 - 2
DMN2991UDA
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 320℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-05 0.0001
1E-06
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN0806-6
A1
A3
A
X2-DFN0806-6
Dim
A
A1
A3
b
b2
D
E
e
k
L
La
z
Min
--
0.00
--
0.07
0.10
0.75
0.55
--
Max
0.40
0.03
--
0.15
0.20
0.85
0.65
--
Typ
0.36
0.02
0.10
0.10
0.15
0.80
0.60
0.30
0.19
0.13
0.20
0.05
0.04
Seating Plane
D
z1
e
z
k
--
--
0.10
0.17
--
0.18
0.25
--
E
La( 2x)
L( 4x)
z1
--
--
All Dimensions in mm
b2( 2x)
b( 4x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN0806-6
X1
X
G
Dimensions Value (in mm)
G
G1
X
X1
X2
Y
0.150
0.140
0.150
0.200
0.800
0.275
0.345
0.760
Y
Y2
G1
Y1
Y1
Y2
X2
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DMN2991UDA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS41328 Rev. 2 - 2
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