DMN3029LFG-13 [DIODES]
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN;
| 型号： | DMN3029LFG-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3029LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
•
•
Low RDS(ON) – ensures on state losses are minimized
ID
V(BR)DSS
RDS(ON)
Small form factor thermally efficient package enables higher
density end products
TA = 25°C
8.0A
6.5A
18.6mΩ @ VGS = 10V
26.5mΩ @ VGS = 4.5V
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
30V
•
•
100% UIS (Avalanche) rated
100% Rg tested
•
•
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Applications
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
•
•
•
Backlighting
DC-DC Converters
Power management functions
•
POWERDI3333-8
Pin 1
S
S
8
7
6
5
1
2
3
4
S
G
D
D
D
D
Top View
Internal Schematic
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMN3029LFG-7
DMN3029LFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000 / Tape & Reel
3000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N39 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
DMN3029LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±25
V
VGSS
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
5.3
4.2
A
A
A
A
A
ID
ID
ID
ID
ID
Steady
Continuous Drain Current (Note 6) VGS = 10V
State
8.0
6.3
9.5
7.7
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
Continuous Drain Current (Note 6) VGS = 4.5V
t ≤ 10s
Steady
State
6.5
4.9
7.8
6.2
t ≤ 10s
Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8)
70
18
16
A
A
IDM
IAR
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
mJ
EAR
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
PD
Max
1.0
Unit
W
130.6
2.07
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
RθJA
PD
62.5
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation (Note 6) t ≤ 10s
RθJA
PD
3.0
43.8
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t ≤ 10s
Operating and Storage Temperature Range
RθJA
TJ, TSTG
-55 to +150
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
100
10
400
350
P
= 10µs
R
W
DS(on)
Limited
Single Pulse
R
R
T
= 60
°
C/W
= r * R
θJA
θ
JA
θ
JA(t)
(t)
300
250
- T = P * R
θJA(t)
J
A
DC
P
= 10s
W
1
200
150
100
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
0.1
T
T
= 150°C
J(max)
= 25°C
A
50
0
Single Pulse
0.01
100
0.1
1
10
0.0001 0.001 0.01
0.1
1
10
100 1,000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
Fig. 1 SOA, Safe Operation Area
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DMN3029LFG
Document number: DS35448 Rev. 7 - 2
DMN3029LFG
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
(t)=r(t) * R
θJA
= 60°C/W
θ
JA
JA
θ
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±25V, VDS = 0V
0.1
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
μA
nA
-
±100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
0.9
1.2
13,5
22
1.8
18.6
26.5
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
VGS = 10V, ID = 10A
mΩ
Static Drain-Source On-Resistance
RDS (ON)
V
GS = 4.5V, ID = 7.5A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
13.0
0.7
S
V
|Yfs|
VSD
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
1.0
-
-
-
-
-
-
-
-
-
-
-
-
580
110
70
-
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
-
pF
Reverse Transfer Capacitance
Gate Resistance
-
Ω
2.0
5.3
11.3
1.9
1.9
4.4
4.6
19.5
5.8
3.0
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 10A
-
-
-
-
-
-
-
-
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Qg
Qg
nC
V
GS = 10V, VDS = 15V,
Qgs
Qgd
tD(on)
tr
I
D = 10A
Gate-Drain Charge
Turn-On Delay Time
ns
ns
ns
ns
Turn-On Rise Time
V
GS = 10V, VDS = 15V,
Turn-Off Delay Time
RL = 15ꢀ, RG = 6ꢀ
tD(off)
tf
Turn-Off Fall Time
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
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DMN3029LFG
Document number: DS35448 Rev. 7 - 2
DMN3029LFG
30
25
30
25
V
= -55°C
V
= 5V
GS
DS
V
= 4.0V
GS
V
= 4.5V
GS
V
= 85°C
GS
20
15
20
15
10
V
= 150°C
GS
V
= 10V
GS
V
= 3.5V
GS
10
V
= 25°C
GS
V
= 3.0V
GS
5
0
5
0
V
= 125°C
GS
V
= 2.5V
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
0.032
0.028
0.024
0.05
V
= 4.5V
GS
T
= 150°C
A
0.045
V
= 4.5V
GS
T
= 125°C
A
0.04
0.035
0.02
0.03
0.025
0.02
T
= 85°C
T
A
0.016
0.012
= 25°C
A
V
= 10V
GS
0.015
0.01
T
= -55°C
0.008
A
0.004
0
0.005
0
0
5
10
15
20
25
30
0
5
10
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.04
1.6
1.4
V
= 10V
GS
I
= 10A
D
V
= 4.5V
= 5A
0.035
GS
I
D
0.03
0.025
0.02
V
= 4.5V
= 5A
GS
1.2
1.0
0.8
0.6
I
D
V
= 10V
GS
0.015
0.01
I
= 10A
D
0.005
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
Fig. 9 On-Resistance Variation with Temperature
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DMN3029LFG
Document number: DS35448 Rev. 7 - 2
DMN3029LFG
2
30
25
1.5
I
= 1mA
D
20
15
T
= 25°C
A
I
= 250µA
D
1
10
5
0.5
0
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
10,000
1,000
1,000
f = 1MHz
C
T
= 150°C
ISS
A
T
= 125°C
A
C
OSS
100
100
C
RSS
T
= 85°C
= 25°C
A
10
1
T
A
10
0
4
8
12
16
20
0
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Leakage Current
vs. Drain-Source Voltage
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DMN3029LFG
Document number: DS35448 Rev. 7 - 2
DMN3029LFG
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI3333-8
Dim Min Max Typ
A
A3
D
E
3.25 3.35 3.30
3.25 3.35 3.30
A1
D
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
D2
L
(4x)
A
A1
A3
b
b2
L
0.75 0.85 0.80
0
−
0.05 0.02
0.203
1
8
4
5
Pin 1 ID
E2
−
0.27 0.37 0.32
0.20
0.35 0.45 0.40
b2
(4x)
E
−
−
L1
e
Z
0.39
0.65
0.515
−
−
−
−
−
−
L1
(3x)
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Dimensions
Value (in mm)
0.650
C
G
G1
Y
Y1
Y2
Y3
X
0.230
0.420
3.700
2.250
1.850
0.700
2.370
8
5
4
Y2
Y3
G1
Y1
Y
1
X2
0.420
X2
C
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DMN3029LFG
Document number: DS35448 Rev. 7 - 2
DMN3029LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
7 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
相关型号：
DMN3029LFG-7
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
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