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DMN601VK_07 [DIODES]

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管
DMN601VK_07
型号： DMN601VK_07
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
双N沟道增强型场效应晶体管

晶体 晶体管 场效应晶体管
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中文：  中文翻译
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DMN601VK  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
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Dual N-Channel MOSFET  
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected Up To 2kV  
"Green" Device (Note 4)  
•
•
Case: SOT-563  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
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•
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•
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SOT-563  
D2  
G1  
S1  
ESD Protected up to 2kV  
TOP VIEW  
S2  
G2  
D1  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Units  
V
V
Gate-Source Voltage  
±20  
VGSS  
Continuous  
Pulsed (Note 3)  
305  
800  
Drain Current (Note 1)  
mA  
ID  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
250  
Units  
mW  
°C/W  
°C  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
500  
Rθ  
JA  
-65 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Symbol Min  
Typ Max Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
60  
⎯
⎯
⎯
V
nA  
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
⎯
250  
VGS = 0V, ID = 10μA  
VDS = 50V, VGS = 0V  
VGS = ±10V, VDS = 0V  
VGS = ±5V, VDS = 0V  
±500  
±100  
Gate-Source Leakage  
nA  
IGSS  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
1.0  
1.6  
2.5  
V
VGS(th)  
VDS = VGS, ID = 250μA  
VGS = 10V, ID = 0.5A  
⎯
⎯
2.0  
3.0  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
Ω
VGS = 4.5V, ID = 200mA  
VDS =10V, ID = 0.2A  
VGS = 0V, IS = 115mA  
Forward Transfer Admittance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
284  
ms  
V
|Yfs|  
VSD  
⎯
0.5  
⎯
1.4  
⎯
50  
25  
5.0  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 25V, VGS = 0V  
f = 1.0MHz  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
October 2007  
© Diodes Incorporated  
DMN601VK  
Document number: DS30655 Rev. 4 - 2  
DMN601VK  
V
= 10V  
GS  
8V  
6V  
5V  
4V  
3V  
8V  
6V  
1.0  
0.8  
0.6  
0.4  
5V  
4V  
0.2  
0
3V  
5
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristics  
2
10  
VDS = 10V  
ID = 1mA  
Pulsed  
1.5  
1
0.5  
0
1
0.1  
-25  
75 100  
0
25  
50  
125 150  
-50  
TCH, CHANNEL TEMPERATURE (°C)  
ID, DRAIN CURRENT (A)  
Fig. 3 Gate Threshold Voltage  
vs. Channel Temperature  
Fig. 4 Static Drain-Source On-Resistance  
vs. Drain Current  
10  
0
1
VGS, GATE SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Fig. 6 Static Drain-Source On-Resistance  
vs. Gate-Source Voltage  
Fig. 5 Static Drain-Source On-Resistance  
vs. Drain Current  
2 of 4  
www.diodes.com  
October 2007  
© Diodes Incorporated  
DMN601VK  
Document number: DS30655 Rev. 4 - 2  
DMN601VK  
VGS = 0V  
Pulsed  
TA = 125  
°C  
TA = 150°C  
TA = 85  
°C  
TA = 25°C  
TA = 0°C  
TA = -25°C  
TA = -55°C  
0
TCH, CHANNEL TEMPERATURE (°C)  
Fig. 7 Static Drain-Source On-State Resistance  
vs. Channel Temperature  
VGS = 10V  
Pulsed  
VGS = 10V  
TA= 25°C  
Pulsed  
TA = 25°C  
TA = 150°C  
TA = -55°C  
TA = 85°C  
VGS = 0V  
1
1
ID, DRAIN CURRENT (A)  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
Ordering Information (Note 6)  
Part Number  
Case  
Packaging  
DMN601VK-7  
SOT-563  
3000/Tape & Reel  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
G1  
S1  
D2  
K7K = Marking Code  
YM = Date Code Marking  
Y = Year ex: S = 2005  
K7K YM  
M = Month ex: 9 = September  
S2  
G2  
D1  
Date Code Key  
Year  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
3 of 4  
www.diodes.com  
October 2007  
© Diodes Incorporated  
DMN601VK  
Document number: DS30655 Rev. 4 - 2  
DMN601VK  
Package Outline Dimensions  
A
SOT-563  
Dim Min Max Typ  
B
C
A
B
C
D
G
H
K
L
0.15  
1.10  
1.55  
0.30 0.20  
1.25 1.20  
1.70 1.60  
0.50  
1.10 1.00  
1.70 1.60  
0.60 0.60  
0.30 0.20  
0.18 0.11  
D
0.90  
1.50  
0.55  
0.10  
0.10  
G
H
M
K
M
All Dimensions in mm  
L
Suggested Pad Layout  
E
E
Dimensions Value (in mm)  
Z
G
X
Y
C
E
2.2  
1.2  
0.375  
0.5  
1.7  
0.5  
C
G
Z
Y
X
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
4 of 4  
www.diodes.com  
October 2007  
© Diodes Incorporated  
DMN601VK  
Document number: DS30655 Rev. 4 - 2  

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