DMN63D8LDW [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;型号: | DMN63D8LDW |
厂家: | DIODES INCORPORATED |
描述: | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总6页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMN63D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ID
V(BR)DSS
RDS(ON)
TA = 25°C
200mA
260mA
4.2Ω @ VGS = 4.5V
2.8Ω @ VGS = 10V
30V
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: SOT363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Applications
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
•
•
•
•
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
•
•
D2
G1
S1
SOT363
S2
G2
D1
ESD PROTECTED
Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN63D8LDW-7
DMN63D8LDW-13
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
MM4
YM
Y M
M M 4
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2012
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
DMN63D8LDW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Steady
±20
VGSS
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
220
170
mA
Continuous Drain Current (Note 5)
VGS = 10V
ID
State
Steady
State
260
210
mA
mA
Continuous Drain Current (Note 6)
VGS = 10V
ID
800
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
300
400
Units
(Note 5)
Total Power Dissipation
(Note 6)
mW
PD
(Note 5)
435
330
139
Thermal Resistance, Junction to Ambient
(Note 6)
Thermal Resistance, Junction to Case
Rθ
Rθ
JA
°C/W
°C
(Note 6)
JC
Operating and Storage Temperature Range
-55 to 150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1.0
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
µA
±10.0
IGSS
μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.8
⎯
⎯
⎯
⎯
⎯
80
-
1.5
2.8
3.8
4.2
4.5
13
V
VGS(th)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.8
VDS = VGS, ID = 250μA
GS = 10.0V, ID = 250mA
V
VGS = 5V, ID = 250mA
VGS = 4.5V, ID = 250mA
VGS = 4.0V, ID = 250mA
VGS = 2.5V, ID = 10mA
VDS = 10V, ID = 0.115A
VGS = 0V, IS = 115mA
Static Drain-Source On-Resistance
RDS (ON)
Ω
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
mS
V
gFS
⎯
1.2
VSD
22.0
3.2
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 30V,
Reverse Transfer Capacitance
Gate Resistance
2.0
79.9
0.87
0.43
0.11
0.11
3.3
Ω
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Qg
Qg
nC
I
D = 150mA
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
3.2
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25Ω
nS
Turn-Off Delay Time
12.0
6.3
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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November 2012
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
DMN63D8LDW
0.8
0.7
0.6
0.5
0.4
V
= 10.0V
GS
V
= 5.0V
DS
V
= 4.5V
GS
0.6
0.5
0.4
0.3
0.2
V
= 4.0V
GS
V
= 3.0V
GS
0.3
0.2
T
= 150°C
A
T
A
= 125°C
V
= 2.5V
T
= 85°C
GS
A
0.1
0
T
= 25°C
0.1
0
A
V
= 2.0V
GS
T
= -55°C
A
0
1
2
3
4
5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristic
5
4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
V
= 2.5V
GS
3
2
V
V
= 4.5V
= 10V
GS
GS
I
= 250mA
D
I
= 100mA
D
1
0
I
= 10mA
D
1.5
1.0
0
0.1 0.2 0.3
0.4 0.5 0.6 0.7 0.8
0
5
10
15
20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
1.4
10
8
V
I
= 5.0V
GS
= 300mA
V
= 4.5V
D
GS
V
= 4.0V
GS
I
= 200mA
D
T
= 150°C
A
1.2
1.0
6
4
T
= 125°C
A
T
= 85°C
A
T
T
= 25°C
A
A
2
0
0.8
0.6
= -55°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN CURRENT (A)
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25 50
75 100 125 150
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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November 2012
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
DMN63D8LDW
2.0
1.8
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.6
1.4
1.2
1.0
I
= 1mA
D
I
= 250µA
D
V
= 4.0V
GS
I
= 200mA
D
0.8
0.6
1.5
1.0
V
= 5.0V
GS
I
= 300mA
D
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
25
50 75 100 125 150
-50 -25
0
25
50
75 100 125 150
C)
Figure 7 On-Resistance Variation with Temperature
°
C)
TJ, JUNCTION TEMPERATURE (
°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= 150°C
A
T
= 125°C
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
0.1
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
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November 2012
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
DMN63D8LDW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Dim Min Max Typ
A
B
C
D
F
0.10 0.30 0.25
1.15 1.35 1.30
2.00 2.20 2.10
0.65 Typ
0.40 0.45 0.425
1.80 2.20 2.15
B
C
H
H
J
0
0.10 0.05
K
J
M
K
L
M
0.90 1.00 1.00
0.25 0.40 0.30
0.10 0.22 0.11
L
D
F
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
X
Y
C1
C2
0.42
0.6
1.9
C1
G
Y
Z
0.65
X
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November 2012
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
DMN63D8LDW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS36021 Rev. 3 - 2
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