DMP1022UFDE_技术文档

DMP1022UFDE

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

•

0.6mm profile – ideal for low profile applications

PCB footprint of 4mm²

Low Gate Threshold Voltage

Fast Switching Speed

ESD Protected to 3KV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

I

_Dmax

V_(BR)DSS

R_DS(ON)max

T_A= 25°C

16mΩ @ V_GS= -4.5V

21.5mΩ @ V_GS= -2.5V

26mΩ @ V_GS= -1.8V

32mΩ @ V_GS= -1.5V

-9.1A

-7.9A

-12V

-7.0A

-6.3A

Mechanical Data

Description

This MOSFET has been designed specifically for use in battery

management applications.

•

Case: U-DFN2020-6 Type E

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

•

Weight: 0.0065 grams (approximate)

Drain

U-DFN2020-6

Type E

6 D

5 D

4 S

D 1

Gate

Pin1

D 2

G 3

Gate

Protection

Diode

S

Source

Pin Out

Bottom View

Internal Schematic

ESD PROTECTED

Ordering Information (Note 4)

Part Number

DMP1022UFDE-7

Marking

Reel size (inches)

Quantity per reel

3,000

P4

7

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

P4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

P4

M = Month (ex: 9 = September)

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Y

Z

A

B

C

D

E

Month

Code

Jan

1

Feb

2

Mar

3

Apr

4

May

5

Jun

6

Jul

7

Aug

8

Sep

9

Oct

O

Nov

N

Dec

D

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July 2012

DMP1022UFDE

Datasheet number: DS35477 Rev. 9 - 2

DMP1022UFDE

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-12

Units

V

Gate-Source Voltage

±8

V_GSS

T

_A= +25°C

_A= +70°C

Steady

State

-9.1

-7.2

A

I_D

Continuous Drain Current (Note 6) V_GS= -4.5V

T_A= +25°C

T_A= +70°C

-11.2

-9.0

t<5s

A

I_D

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

-90

I_DM

T

_A= +25°C

_C= +25°C

-2.5

-7.1

Continuous Source-Drain Diode Current

I_S

Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)

-50

I_SM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

0.66

Units

T

_A= +25°C

Total Power Dissipation (Note 5)

W

0.42

189

123

2.03

1.3

61

40

9.3

T_A= +70°C

Steady state

t<5s

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

W

R_θ

JA

T_A= +25°C

P_D

T_A= +70°C

Steady state

t<5s

Thermal Resistance, Junction to Ambient (Note 6)

R_θ

JA

°C/W

°C

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

Steady state

R_θ

JC

-55 to +150

T_J,T_STG

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

100

90

P

= 10µs

W

Single Pulse

R

T

= 61

°

C/W

= r * R

θJA

θ

JA

R

80

70

60

50

40

30

20

10

θ

JA(t)

(t)

DS(on)

Limited

- T = P * R

10

1

J

A θJA(t)

DC

= 10s

P

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

0.1

0.01

0

0.01

0.1

1

10

100

0.0001 0.001 0.01

0.1

1

10

100 1,000

t1, PULSE DURATION TIME (sec)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 SOA, Safe Operation Area

Fig. 2 Single Pulse Maximum Power Dissipation

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July 2012

DMP1022UFDE

Datasheet number: DS35477 Rev. 9 - 2

DMP1022UFDE

1

D = 0.7

D = 0.5

D = 0.3

D = 0.9

0.1

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

0.01

R

(t)=r(t) * R

=61°C/W

θ

JA

θJA

θ

Duty Cycle, D=t1/ t2

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIMES (sec)

Fig. 3 Transient Thermal Resistance

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-12

—

-1

V

BV_DSS

I_DSS

V_GS= 0V, I_D= -250μA

µA

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

V_DS= -12V, V_GS= 0V

V_GS= ±5V, V_DS= 0V

—

±2

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.35

-

—

2.5

—

-0.8

—

V

mV/°C

A

V_GS(th)

ΔV_GS(th)/ΔT_J

I_D(ON)

V_DS= V_GS, I_D= -250μA

V_GS(th)Temperature Coefficient

On-State Drain Current

I

_D= -250μA

_GS= -4.5V, V_DS< -5A

V_GS= -4.5V, I_D= -8.2A

—

16

-10

V

12

15

20

23

46

12

-0.8

21.5

26

V

_GS= -2.5V, I_D= -7.2A

_GS= -1.8V, I_D= -6.6A

_GS= -1.5V, I_D= -1A

_GS= -1.2V, I_D= -1A

Static Drain-Source On-Resistance

—

R_{DS (ON)}

mΩ

32

95

—

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

S

V

|Y_fs|

V_SD

V_DS= -4V, I_D= -8.2A

V_GS= 0V, I_S= -8A

-1.2

—

2953

756

678

8.6

—

C_iss

C_oss

C_rss

R_g

V_DS= -4V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

pF

—

Reverse Transfer Capacitance

Gate Resistance

18

ꢀ

V_DS= 0V, V_GS= 0V, f = 1MHz

V_GS= -5V, V_DS= -4, I_D= -10A

28.4

25.3

2.3

42.6

38

Total Gate Charge

Q_g

Total Gate Charge

Q_g

nC

ns

V_GS= -4.5V, V_DS= -4V,

—

Gate-Source Charge

Q_gs

Q_gd

t_D(on)

t_r

I

_D= -10A

7.2

—

Gate-Drain Charge

20

30

Turn-On Delay Time

28

42

Turn-On Rise Time

V_DS= -4V, V_GS= -4.5V,

R_G= 1ꢀ, R_L= 0.4ꢀ, I_D= -9.8A

117

93

176

139

Turn-Off Delay Time

t_D(off)

t_f

Turn-Off Fall Time

BODY DIODE CHARACTERISTICS

Diode Forward Voltage

—

-0.8

—

-1.2

-2.5

-7.1

-50

56

V

A

V_SD

I_S

I_SM

t_rr

V_GS= 0V, I_S= -9.8A

T_A= +25°C

Continuous Source-Drain Diode Current (Note 6)

—

T_C= +25°C

—

Pulse Diode Forward Current (Note 8)

Bodyy Diode Reverse Recovery Time (Note 8)

Reverse Recovery Fall Time

—

28

10

18

13

—

ns

t_a

I_S= -9.8A, dI/dt = 100A/μs

—

Reverse Recovery Rise Time

t_b

26

Body Diode Reverse Recovery Charge (Note 8)

nC

Q_rr

Notes:

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

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July 2012

DMP1022UFDE

Datasheet number: DS35477 Rev. 9 - 2

DMP1022UFDE

30

25

20

16

V

= -8.0V

GS

V

= -5.0V

DS

V

= -4.5V

GS

V

= -2.5V

GS

V

= -2.0V

GS

V

= -1.8V

GS

12

8

15

10

V

= -1.5V

GS

T

= 150°C

A

T

= 85°C

A

4

0

5

0

T

= 125°C

A

T

= 25°C

A

T

= -55°C

V

= -1.2V

A

GS

0

0.5

1.0

1.5

2.0

2.5

3.0

0

1

2

3

4

5

-V_GS, GATE-SOURCE VOLTAGE (V)

-V_DS, DRAIN -SOURCE VOLTAGE(V)

Fig. 5 Typical Transfer Characteristics

Fig. 4 Typical Output Characteristics

0.06

0.05

0.030

0.025

0.020

V

= -4.5V

GS

0.04

0.03

0.02

T

= 150°C

A

T

= 125°C

A

0.015

0.010

T

= 85

°

C

A

T

= 25

°C

A

T

= -55°C

A

0.005

0

0.01

0

5

10

15

20

25

30

0

4

8

12

16

20

-I_D, DRAIN SOURCE CURRENT (A)

-I_D, DRAIN SOURCE CURRENT

Fig. 7 Typical On-Resistance vs.

Drain Current and Temperature

Fig. 6 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.7

1.5

0.04

0.03

1.3

1.1

0.9

V

I

= -2.5V

GS

= -5A

D

0.02

V

I

= -4.5V

GS

= -10A

D

0.01

0

0.7

0.5

-50 -25

T_J, JUNCTION TEMPERATURE (

Fig. 8 On-Resistance Variation with Temperature

0

25

50

75 100 125 150

-50 -25

T_J, JUNCTION TEMPERATURE (

Fig. 9 On-Resistance Variation with Temperature

0

25

50

75 100 125 150

°C)

°

C)

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July 2012

DMP1022UFDE

Datasheet number: DS35477 Rev. 9 - 2

DMP1022UFDE

1.4

1.2

20

16

1.0

0.8

12

8

0.6

0.4

4

0

0.2

0

-50 -25

0

25

50

75 100 125 150

0.4

0.6

0.8

1.0

1.2

T_A, AMBIENT TEMPERATURE (°C)

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 10 Gate Threshold Variation vs. Ambient Temperature

4,000

Fig. 11 Diode Forward Voltage vs. Current

100,000

10,000

3,500

3,000

2,500

2,000

f = 1MHz

T

= 150°C

= 125°C

A

C

iss

A

1,500

1,000

100

T

= 85°C

A

C

oss

500

0

C

T

= 25°C

rss

A

0

2

4

6

8

10

12

0

3

6

9

12

15

-V_DS, DRAIN-SOURCE VOLTAGE(V)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 13 Typical Drain-Source Leakage Current vs. Voltage

Fig. 12 Typical Junction Capacitance

8

6

4

2

0

5

10 15 20 25 30 35 40 45 50

Q_g, TOTAL GATE CHARGE (nC)

Fig. 14 Gate-Charge Characteristics

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July 2012

DMP1022UFDE

Datasheet number: DS35477 Rev. 9 - 2

DMP1022UFDE

Package Outline Dimensions

A3

U-DFN2020-6

Type E

A1

A

Dim

A

A1

A3

b

Min

0.57

0

−

0.25

Max

0.63

0.05

−

Typ

0.60

0.03

0.15

0.30

D

0.35

b1

D

D2

E

E2

e

L

L1

K1

K2

Z

0.185 0.285 0.235

1.95

0.85

1.95

1.40

−

2.05

1.05

2.05

1.60

−

0.35

0.92

−

2.00

0.95

2.00

1.50

0.65

0.30

0.87

0.305

0.225

0.20

b1

K1

D2

0.25

0.82

−

E

E2

L1

L(2X)

−

K2

−

All Dimensions in mm

Z(4X)

e

b(6X)

Suggested Pad Layout

Value

Dimensions

(in mm)

0.650

0.400

0.285

1.050

0.500

0.920

1.600

2.300

C

X

X1

X2

Y

Y1

Y2

Y3

X2

Y1

Y3 Y2

X1

Y (2x)

X (6x)

C

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July 2012

DMP1022UFDE

Datasheet number: DS35477 Rev. 9 - 2

DMP1022UFDE

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

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July 2012

DMP1022UFDE

Datasheet number: DS35477 Rev. 9 - 2


型号：	DMP1022UFDE
厂家：	DIODES INCORPORATED
描述：	12V P-CHANNEL ENHANCEMENT MODE MOSFET 12V P沟道增强型MOSFET
文件：	总7页 (文件大小：212K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP1022UFDE [DIODES]

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