DMP2123LQ [DIODES]
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR;
| 型号： | DMP2123LQ |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：494K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2123LQ
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
Low RDS(ON)
Case: SOT23
-
-
-
72mΩ @VGS = -4.5V
108mΩ @VGS = -2.7V
123mΩ @VGS = -2.5V
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
SOT23
D ra in
D
G ate
S
G
S o urce
Top View
Internal Schematic
Top View
Ordering Information (Note 5)
Part Number
DMP2123LQ-7
DMP2123LQ-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
M1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M1P
M = Month (ex: 9 = September)
Date Code Key
Year
2007
…
2015
2016
2017
2018
2019
2020
2021
2022
2023
Code
U
…
C
D
E
F
G
H
I
J
K
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
DMP2123LQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-Source Voltage
V
VGSS
12
Drain Current (Note 6) Continuous
TA = +25°C
TA = +70°C
-3.0
-2.4
A
ID
Pulsed Drain Current (Note 7)
-15
A
A
IDM
IS
Body-Diode Continuous Current (Note 6)
-2.0
Thermal Characteristics
Characteristic
Symbol
PD
Value
1.4
Unit
W
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6); Steady-State
Operating and Storage Temperature Range
90
RθJA
C/W
C
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
STATIC PARAMETERS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
-20
V
µA
nA
V
BVDSS
IDSS
-1
ID = -250µA, VGS = 0V
VDS = -20V, VGS = 0V
VDS = 0V, VGS = 12V
VDS = VGS, ID = -250µA
VGS = -4.5V, VDS = -5V
TJ = +25°C
IGSS
100
-1.25
-0.6
-15
VGS(TH)
ID(ON)
On State Drain Current (Note 8)
A
VGS = -4.5V, ID = -3.5A
VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
51
87
99
72
108
123
Static Drain-Source On-Resistance (Note 8)
mΩ
RDS(ON)
Forward Transconductance (Note 8)
Diode Forward Voltage (Note 6)
7.3
-0.79
S
V
A
gFS
VSD
IS
VDS = -10V, ID = -3.0A
IS = -1.7A, VGS = 0V
-1.26
-1.7
Maximum Body-Diode Continuous Current (Note 6)
DYNAMIC PARAMETERS (Note 9)
Total Gate Charge
7.3
2.0
1.9
12
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Qg
Qgs
Qgd
tD(ON)
tR
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
20
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6Ω
Turn-Off Delay Time
38
tD(OFF)
tF
Turn-Off Fall Time
41
Input Capacitance
443
128
101
Ciss
Coss
Crss
VDS = -16V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Notes:
6. Device mounted on 1" x 1", FR-4 PC board with 2 oz. copper and test pulse width t 10s.
7. Repetitive Rating, pulse width limited by junction temperature.
8. Test pulse width t = 300µs.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
DMP2123LQ
V
= -5V
DS
Pulsed
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
C
iss
C
oss
C
rss
V
= -2.5V
GS
f = 1 MHz
V
= 0V
V
= -4.5V
= -10V
GS
GS
V
GS
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
Fig. 4 Typical Total Capacitance
V
= -4.5V
GS
= -3.0A
I
D
-I = 250µ A
D
V
I
= -10V
GS
= -3.5A
D
V
= -2.5V
GS
= -1.0A
I
D
(oC)
TA, AMBIENT TEMPERATURE
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
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© Diodes Incorporated
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
DMP2123LQ
100
10
P
= 10µs
W
R
DS(on)
Limited
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
P
= 1ms
W
P
=
100µs
W
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 SOA, Safe Operation Area
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
SOT23
GAUGE PLANE
Dim
A
B
C
D
F
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.25
J
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Y
Z
C
X
E
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October 2015
© Diodes Incorporated
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
DMP2123LQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP2123LQ
Document number: DS38317 Rev. 2 - 2
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