DMP2200UDW-13 [DIODES]
Dual P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP2200UDW-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Dual P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2200UDW
Dual P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Features
•
•
•
•
•
•
•
Low RDS(ON) – Minimizes Conduction Losses
Low Input Capacitance
V(BR)DSS
RDS(on) max
ID max
260mΩ @VGS = -4.5V
500mΩ @VGS = -2.5V
1000mΩ @VGS = -1.8V
Fast Switching Speed
-20V
-0.9 A
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
•
•
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
•
•
Battery Disconnect Switch
Load Switch for Power Management Functions
Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.006 grams (Approximate)
D2
D2
G1
S1
D1
SOT363
G2
G1
S2
G2
D1
Gate Protection
Diode
Gate Protection
Diode
S2
S1
ESD PROTECTED
Top View
Top View
Pin out
Q2 P-CHANNEAL
Q1 P-CHANNEAL
Ordering Information (Note 4)
Part Number
DMP2200UDW-7
DMP2200UDW-13
Case
SOT363
SOT363
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT363
P22 = Marking Code
YM = Date Code Marking
Y or Y= Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2014
B
2015
C
2016
D
2017
E
2018
F
2019
G
2020
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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February 2015
© Diodes Incorporated
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
DMP2200UDW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
8
Units
V
V
Gate-Source Voltage
VGSS
TA = +25°C
Continuous Drain Current (Note 6)
TA = +85°C
-0.9
-0.7
A
ID
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Symbol
Value
Units
W
W
0.45
0.6
PD
Steady
Thermal Resistance, Junction to Ambient (Note 5)
State
Steady
275
RθJA
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
State
208
72
Thermal Resistance, Junction to Case
RθJC
Operating and Storage Temperature Range
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
-20
V
-1
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = -16V, VGS = 0V
µA
µA
10
IGSS
VGS = 8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
-1.2
V
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -0.88A
VGS = -2.5V, ID = -0.71A
VGS = -1.8V, ID = -0.20A
VGS = 0V, IS = -0.48A
180
240
320
260
500
1,000
Static Drain-Source On-Resistance
Diode Forward Voltage
mΩ
-0.8
-1.2
V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
184
26.4
18.5
221
2.1
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = VGS = 0V,f = 1.0MHz
Total Gate Charge
nC
nC
nC
Qg
VGS = -4.5V, VDS = -10V,
ID = -1.7A
Gate-Source Charge
Gate-Drain Charge
0.4
Qgs
Qgd
tD(ON)
tD(OFF)
tr
0.5
Turn-On Delay Time
9.8
24.4
88
ns
ns
ns
ns
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
VDD = -10V, ID = -1.5A,
VGS = -4.5V, RGEN = 1
Ω
tf
45
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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February 2015
© Diodes Incorporated
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
DMP2200UDW
5.0
4.0
3.0
2.0
1.0
0.0
5
4
3
2
T
= -55°C
A
V
= -5.0V
DS
T
= 125°C
= 150°C
A
T
= 25°C
V
= -8.0V
A
GS
V
= -4.5V
T = 85°C
A
GS
T
A
V
= -3.0V
GS
V
= -2.0V
GS
V
= -1.8V
GS
V
= -1.5V
GS
1
0
V
= -1.2V
GS
3.5
4
5
0
0.5
1.5
2
2.5
3
0
1
2
3
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.3
0.28
0.26
0.24
0.22
0.2
0.6
0.55
0.5
I
= -0.88A
D
V
= -2.5V
GS
0.45
0.4
0.35
0.3
0.25
V
= -4.5V
GS
I
= -0.71A
0.2
D
0.18
0.16
0.15
0
1
2
3
4
5
0.1
0
1
2
3
4
5
6
7
8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
0.34
0.32
0.3
1.5
T
= 150°C
A
V
= -4.5V
V
I
= -2.5V
GS
GS
1.4
1.3
1.2
1.1
= -0.71A
D
0.28
0.26
0.24
0.22
0.2
T
= 125°C
= 85°C
= 25°C
A
A
V
= -4.5V
GS
I
= -0.88A
D
T
1
T
A
0.18
0.16
0.14
0.12
0.9
0.8
0.7
T
= -55°C
A
0
1
2
3
4
5
-50 -25
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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February 2015
© Diodes Incorporated
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
DMP2200UDW
0.36
0.34
0.32
0.3
1
0.9
0.8
0.7
V
I
= -2.5V
GS
= -0.71A
D
I
= -1mA
D
0.28
0.26
0.24
0.22
0.2
I
= -250µA
D
0.6
0.5
0.4
0.3
V
I
= -4.5V
GS
= -0.88A
D
0.18
0.16
0.14
0.12
-50 -25
25
50
75 100 125 150
0
-50 -25
0
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs.
Junction Temperature
5
1000
T
= 150°C
A
4
3
2
1
0
C
iss
T
= 125°C
A
100
T
= 25°C
A
T
= 85°C
A
T
= 55°C
A
C
oss
f = 1MHz
C
rss
10
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
10
R
DS(on)
Limited
P
= 100µs
7
6
5
4
3
2
1
0
W
1
DC
= 10s
V
I
= -10V
P
DS
W
P
= 1s
= -1.7A
W
D
P
= 100ms
W
P
= 10ms
W
0.1
P
= 1ms
W
TJ(max)= 150°C
TA = 25°C
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
0.01
0
1
2
3
4
0.1
10
100
1
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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February 2015
© Diodes Incorporated
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
DMP2200UDW
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
(t) = r(t) * R
θJA
θJA
R
= 271°C/W
θJA
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
0.1
1
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT363
Dim Min Max Typ
A
A
B
C
D
F
0.10 0.30 0.25
1.15 1.35 1.30
2.00 2.20 2.10
0.65 Typ
B
C
0.40 0.45 0.425
1.80 2.20 2.15
H
J
H
0
0.10 0.05
K
L
0.90 1.00 1.00
0.25 0.40 0.30
0.10 0.22 0.11
K
J
M
M
α
0°
8°
-
L
D
F
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
C1
G
Y
X
0.42
0.6
Z
Y
C1
C2
1.9
0.65
X
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February 2015
© Diodes Incorporated
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
DMP2200UDW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
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