DMP2225L [DIODES]
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; P沟道增强型场效应晶体管
| 型号： | DMP2225L |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2225L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
•
Low On-Resistance:
•
•
Case: SOT-23
RDS(ON) < 110mΩ @ VGS = -4.5V
RDS(ON) < 225mΩ @ VGS = -2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
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•
•
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Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Drain
D
Gate
Source
EQUIVALENT CIRCUIT
S
G
TOP VIEW
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Units
V
V
Gate-Source Voltage
±12
VGSS
T
T
A = 25°C
A = 70°C
Drain Current (Note 1)
Steady
State
-2.6
-2
A
A
ID
Pulsed Drain Current (Note 3)
8
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
1.08
115
Units
W
PD
°C/W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
°C
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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© Diodes Incorporated
DMP2225L
Document number: DS31461 Rev. 3 - 2
DMP2225L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-20
⎯
-6
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
⎯
⎯
-800
⎯
⎯
±80
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VDS ≤ -5V, VGS = -4.5V
VDS ≤ -5V, VGS = -2.5V
nA
On-State Drain Current
A
ID(ON)
IGSS
-3
Gate-Source Leakage
nA
⎯
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
-0.45
-1.25
V
VGS(th)
⎯
80
165
VDS = VGS, ID = -250μA
GS = -4.5V, ID = -2.6A
V
110
225
Static Drain-Source On-Resistance
RDS (ON)
⎯
mΩ
VGS = -2.5V, ID = -2.0A
VDS = -5V, ID = -2.6A
VGS = 0V, IS = -2.6A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
4
S
V
|Yfs|
VSD
⎯
⎯
⎯
-1.26
⎯
250
88
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
16
5.3
⎯
⎯
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
58
12
VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge
4.3
0.9
2.1
Qg
VGS = -4.5V, VDS = -10V,
ID = -2.7A
Gate-Source Charge
nC
Qgs
Qgd
Gate-Drain Charge
Notes:
5. Short duration pulse test used to minimize self-heating effect.
V
= -5V
DS
Pulsed
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
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© Diodes Incorporated
DMP2225L
Document number: DS31461 Rev. 3 - 2
DMP2225L
1
f = 1 MHz
= 0V
V
GS
V
= -2.5V
GS
C
iss
V
= -4.5V
0.1
GS
GS
C
oss
V
= -10V
C
rss
0.01
0.01
0.1
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
1
10
V
= -4.5V
GS
I
= -3.0A
D
-I = 250µA
D
V
I
= -10V
GS
= -5.0A
D
V
= -2.5V
GS
I
= -1.0A
D
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
-VSD, SOURCE DRAIN VOLTAGE (V)
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© Diodes Incorporated
DMP2225L
Document number: DS31461 Rev. 3 - 2
DMP2225L
Ordering Information (Note 6)
Part Number
Case
Packaging
DMP2225L-7
SOT-23
3000/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2P2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
2P2
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-23
Min
Dim
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
B
C
D
F
G
H
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
C
B
G
H
K
J
M
K
L
M
L
F
D
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
Z
C
1.35
E
X
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© Diodes Incorporated
DMP2225L
Document number: DS31461 Rev. 3 - 2
DMP2225L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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July 2009
© Diodes Incorporated
DMP2225L
Document number: DS31461 Rev. 3 - 2
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DIODES
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