DMP2200UFCL_17 [DIODES]
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP2200UFCL_17 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2200UFCL
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Features
Typical Off Board Profile of 0.5mm - Ideally Suited for Thin
Applications
BVDSS
RDS(ON) max
ID max
-1.7A
-1.3A
-1.1A
-0.5A
200mΩ @VGS = -4.5V
290mΩ @VGS = -2.5V
390mΩ @VGS = -1.8V
650mΩ @VGS = -1.5V
Low RDS(ON) – Minimizes Conduction Losses
PCB Footprint of 2.56mm2
-20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
Description
This device provides a high performance, low RDS(ON) P-Channel
MOSFET in the thermally and spatially efficient U-DFN1616-6 (Type
F) package. The low RDS(ON) of this MOSFET ensures conduction
losses are kept making it ideal for use in the following applications.
Mechanical Data
Case: U-DFN1616-6 (Type F)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu. Solderable per MIL-STD-202,
Method 208 e4
Applications
Battery Disconnect Switch
Load Switch for Power Management Functions
Weight: 0.04 grams (Approximate)
D1
D2
Pin1
D1
D2
G1
G2
Gate Protection
Diode
Gate Protection
Diode
S2
S1
ESD PROTECTED
Bottom View
Device Symbol
Pin Configuration
Bottom View
Ordering Information (Note 4)
Part Number
DMP2200UFCL-7
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
3,000
7
8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
P20 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
P20
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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June 2017
© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 4 - 2
DMP2200UFCL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-Source Voltage
±8
V
VGSS
Continuous Drain Current (Note 6)
@TA = +25°C
@TA = +85°C
-1.7
-1.2
A
A
ID
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
-8
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.66
Unit
W
(Note 5)
Total Power Dissipation
(Note 6)
PD
1.58
W
(Note 5)
Thermal Resistance, Junction to Ambient
(Note 6)
193
°C/W
°C
R
JA
80
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
-20
V
BVDSS
IDSS
-1
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
µA
±10
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
-1.2
V
Ω
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -2.0A
VGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -0.24A
VGS = -1.5V, ID = -0.18A
153
220
260
200
290
390
650
Static Drain-Source On-Resistance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-1.2
VGS = 0V, IS = -0.6A
—
—
—
—
—
—
184
25.8
18.6
2.2
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
Ciss
Coss
Crss
Qg
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS = -4.5V, VDS = -10V,
ID = -1.7A
Gate-Source Charge
0.4
Qgs
Qgd
Gate-Drain Charge
0.5
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
—
—
—
9.8
23
—
—
—
ns
ns
ns
ns
ns
nC
tD(ON)
tD(OFF)
tR
Turn-Off Delay Time
VDD = -10V, ID = -1.5A,
VGS = -4.5V, RGEN = 1Ω
Turn-On Rise Time
87
Turn-Off Fall Time
—
—
41
—
—
tF
Bodyy Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21.5
4.2
tRR
IF = -2A, di/dt = 100A/μs
—
—
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 4 - 2
DMP2200UFCL
10
8
10
8
V
= -8.0V
GS
T = -55C
A
V
DS
= -5.0V
T = 25C
A
V
V
= -4.0V
= -3.0V
GS
V
= -4.5V
T = 150C
A
GS
GS
T = 85C
A
T
= 125C
A
6
6
V
= -2.5V
GS
4
4
V
= -2.0V
GS
2
2
V
= -1.5V
GS
V
= -1.2V
GS
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.5
0.4
0.3
0.2
0.1
0
2
1.8
1.6
1.4
1.2
1
V
= -1.8V
GS
I
= -2.0A
D
V
GS
= -2.5V
V
= -4.5V
GS
0.8
0.6
0.4
0.2
0
I
= -1.2A
D
I
= -0.24A
D
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
-VGS, GATE-SOURCE CURRENT (V)
Figure 4 Typical Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0
2
V
= -4.5V
GS
1.8
1.6
1.4
1.2
1
V
I
= -4.5V
GS
= -3A
D
T
= 150C
A
T
= 125C
A
T
= 85C
A
V
I
= -2.5V
GS
= -1A
T
= 25C
D
A
0.8
0.6
0.4
0.2
0
T
= -55C
A
0
2
4
6
8
10
-50 -25
0
25
50
75 100 125 150
-ID, DRAIN SOURCE CURRENT (A)
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 4 - 2
DMP2200UFCL
0.5
0.4
0.3
0.2
0.1
0
1
0.8
0.6
0.4
0.2
0
-I =1mA
D
V
I
= -2.5V
GS
= -1A
-I = 250µA
D
D
V
I
= -4.5V
GS
= -3A
D
-50 -25
0
25
50
75
100 125 150
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
10
8
1000
f = 1MHz
C
iss
T = 150C
A
100
6
T = 125C
A
C
oss
T = 85C
4
A
C
rss
T = 25C
A
10
2
T = -55C
A
1
0
0
2
4
6
8
10 12 14 16 18 20
0
0.3
0.6
0.9
1.2
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
6
4
2
0
10
R
DS(ON)
Limited
1
DC
= 10s
P
W
V
I
= -10V
DS
= -1.7A
P
= 1s
W
D
P
= 100ms
W
P
= 10ms
W
0.1
0.01
P
= 1ms
W
P
= 100µs
W
T
T
= 150°C
J(max)
= 25°C
A
V
= -4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0
0.5
1
1.5
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
2
2.5
3
3.5
4
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 4 - 2
DMP2200UFCL
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * RθJA
RθJA = 190℃/W
Single Pulse
Duty Cycle, D = t1/t2
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 4 - 2
DMP2200UFCL
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN1616-6 (Type F)
A1
U-DFN1616-6
A3
Type F
A
Dim Min Max Typ
Seating Plane
A
A1
A3
b
0.45 0.55 0.50
0
—
0.05 0.02
0.127
D
D1
—
0.20 0.30 0.25
1.55 1.65 1.60
1.14 1.34 1.24
0.38 0.58 0.48
1.55 1.65 1.60
0.54 0.74 0.64
D
D2( 2X)
E2( 2x)
D1
D2
E
E2
e
Pin #1 ID
E
—
—
—
—
0.50
0.23
K
K
L
Z
0.15 0.35 0.25
0.175
—
—
All Dimensions in mm
e
L
Z( 4x)
b
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN1616-6 (Type F)
X2
G1
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y
0.500
0.150
0.180
0.320
0.580
1.320
0.450
0.700
1.900
X1
G
Y1
Y2
Y
C
X
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© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 4 - 2
DMP2200UFCL
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 4 - 2
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