DMP3007SPS-13 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMP3007SPS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3007SPS
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Features and Benefits
Low RDS(ON) – Minimizes On-State Losses
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
ID Max
BVDSS
RDS(ON) Max
TC = +25°C
7mΩ @ VGS = -10V
16mΩ @ VGS = -4.5V
-90A
-60A
100% Unclamped Inductive Switching – Ensures More Reliability
ESD Protected Gate
-30V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case: PowerDI5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Backlighting
Power Management Functions
DC-DC Converters
D
ESD PROTECTED
PowerDI5060-8
S
S
D
D
D
D
Pin1
G
S
G
Gate Protection
Diode
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP3007SPS-13
2,500/Tape & Reel
PowerDI5060-8
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
= Manufacturer’s Marking
P3007SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
P3007SS
YY WW
WW = Week (01 to 53)
S
S
S
G
POWERDI is a registered trademark of Diodes Incorporated
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© Diodes Incorporated
DMP3007SPS
Document number: DS39051 Rev.3 - 2
DMP3007SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Unit
V
Gate-Source Voltage
±25
V
VGSS
TC = +25°C
Continuous Drain Current, VGS = -10V (Note 7)
TC = +70°C
-90
-70
A
ID
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH (Note 8)
-90
-160
-16
A
A
IS
IDM
IAS
EAS
A
Avalanche Energy, L=1mH (Note 8)
130
mJ
Thermal Characteristics
Characteristic
Symbol
PD
R
Value
1.4
Unit
W
Total Power Dissipation (Note 5)
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
90
°C/W
W
JA
2.7
PD
R
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
47
80
°C/W
W
JA
PD
R
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
1.5
°C/W
°C
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-30
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
μA
μA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
—
±10
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.0
—
—
4.5
12
-3.0
7
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -10V, ID = -15A
VGS = -4.5V, ID = -10A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
—
16
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
-0.7
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,826
606
305
23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -15V, ID = -11.5A
31.2
64.2
10.6
11.6
4.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
Qg
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
4.3
VDD = -15V, VGS = -10V,
Rg = 6Ω, ID = -11.5A
Turn-Off Delay Time
306
125
19
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
tRR
IS = -11.5A, dI/dt = 100A/μs
9.8
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMP3007SPS
Document number: DS39051 Rev.3 - 2
DMP3007SPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = -3.5V
VDS = -5V
VGS=-4.0V
VGS = -4.5V
VGS = -10.0V
VGS = -3.0V
TJ=125℃
TJ=85℃
TJ=25℃
TJ=150℃
VGS = -2.7V
VGS = -2.5V
TJ=-55℃
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
ID = -11.5A
10.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
30
25
20
15
10
5
VGS = -4.5V
VGS = -10V
ID = -8.5A
0
0
5
10
15
20
25
30
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
1.4
1.2
1
8
VGS = -10V
7
6
5
4
3
2
1
0
VGS = -10V, ID = -11.5A
150℃
125℃
85℃
25℃
VGS = -4.5V, ID = -8.5A
-55℃
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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DMP3007SPS
Document number: DS39051 Rev.3 - 2
DMP3007SPS
12
10
8
3
2.5
2
VGS = -4.5V, ID = -8.5A
ID = -1mA
6
1.5
1
ID = -250μA
4
VGS = -10V, ID = -11.5A
2
0.5
0
0
-50
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
f=1MHz
VGS = 0V
Ciss
1000
Coss
TJ = 85oC
TJ = 125oC
TJ = 25oC
Crss
TJ = 150oC
TJ = -55oC
0
100
0
0.3
0.6
0.9
1.2
0
2
4
6
8
10
12
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
RDS(ON) Limited
PW =1µs
PW =10µs
PW =100µs
PW =1ms
PW =10ms
VDS = -15V, ID = -11.5A
TJ(Max) = 150℃
TC = 25℃
1
PW =100ms
PW =1s
Single Pulse
DUT on on infinite
heatsink
VGS= -10V
0.1
0.1
1
10
100
0
10
20
30
40
50
60
70
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Qg (nC)
Figure 11. Gate Charge
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© Diodes Incorporated
DMP3007SPS
Document number: DS39051 Rev.3 - 2
DMP3007SPS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
RθJC(t) = r(t) * RθJC
RθJC = 1.5℃/W
Duty Cycle, D = t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMP3007SPS
Document number: DS39051 Rev.3 - 2
DMP3007SPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
D
D1
Detail A
c
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
0( 4X)
A1
0.41
E1 E
e
0.330 0.277
5.15 BSC
D
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12º
8º
4.90
3.90
4.10
01 ( 4X)
1
b ( 8X)
L
e/2
1
5.60
3.28
3.99
5.80
3.48
4.19
b2 ( 4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10º
0.61
0.61
A
D2
b3 ( 4X)
E3
E2
M
M1
Detail A
G
L1
M1
Θ
Θ1
1.21
11º
7º
6º
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
X4
Y2
Dimensions
Value (in mm)
1.270
X3
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y3
Y1
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
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DMP3007SPS
Document number: DS39051 Rev.3 - 2
DMP3007SPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
DMP3007SPS
Document number: DS39051 Rev.3 - 2
相关型号：
DMP3008SFG-13
Small Signal Field-Effect Transistor, 7.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
DMP3008SFG-7
Small Signal Field-Effect Transistor, 7.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
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