DMP3010LK3-13 [DIODES]
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET;
| 型号： | DMP3010LK3-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3010LK3
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input Capacitance
ID
V(BR)DSS
RDS(on) max
TA = +25°C
-17A
Low On-Resistance
8mΩ @ VGS = -10V
Fast Switching Speed
-30V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-14.5A
10.2mΩ @ VGS = -4.5V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
Mechanical Data
)
performance, making it ideal for high efficiency power management
applications.
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power management functions
Backlighting
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (approximate)
D
D
D
TO252
G
G
S
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 4 & 5)
Part Number
DMP3010LK3-13
DMP3010LK3Q-13
Compliance
Standard
Automotive
Case
TO252
TO252
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Logo
.
Part no.
P3010L
YYWW
Xth week: 01 ~ 53
Year: “11＂ = 2011
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© Diodes Incorporated
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
DMP3010LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
±20
VGSS
T
A = +25°C
Steady
State
-17.0
-13.0
A
A
A
A
ID
ID
ID
ID
TA = +70°C
TA = +25°C
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 7) VGS = -4.5V
-27.0
-21.0
t<10s
T
A = +70°C
A = +25°C
T
Steady
State
-14.5
-11.5
TA = +70°C
TA = +25°C
-23.0
-18.0
t<10s
TA = +70°C
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 7)
Avalanche Current (Note 8)
-100
5.5
A
A
IDM
IS
47
A
IAS
EAS
Avalanche Energy (Note 8)
113
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Total Power Dissipation (Note 6)
1.7
72
29
3.4
37
15
Steady state
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
R
JA
t<10s
PD
R
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
JA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
V
BVDSS
IDSS
-1
VGS = 0V, ID = -250µA
DS = -30V, VGS = 0V
µA
nA
V
IGSS
100
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.1
-1.6
6.5
-2.1
8
V
VGS(th)
VDS = VGS, ID = -250µA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
VDS = -15V, ID = -10A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
mΩ
RDS (ON)
7.2
10.2
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
30
S
V
|Yfs|
VSD
-1.0
-0.65
6234
1500
774
Ciss
Coss
Crss
RG
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
µ
Reverse Transfer Capacitance
Gate Resistance
1.28
59.2
16.1
15.7
11.4
9.4
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -15V, VGS = -4.5V,
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(on)
tr
I
D = -10A
Turn-On Delay Time
Turn-On Rise Time
VDS = -15V, VGEN = -10V,
RG = 6Ω, ID = -1A
ns
Turn-Off Delay Time
260.7
99.3
tD(off)
tf
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .UIS in production with L = 0.1mH, TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
DMP3010LK3
30
25
30
25
V
= -10V
GS
V
= -4.5V
= -5.0V
V
= -5V
DS
GS
V
GS
V
= -3.5V
20
15
10
20
15
10
GS
V
= -3.0V
GS
V
= -2.5V
GS
T
A
= 150°C
A
T
= 125°C
5
0
T = 85°C
A
5
0
T
= 25°C
A
V
= -2.0V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.016
0.014
0.020
0.016
V
= -4.5V
GS
0.012
0.010
0.008
0.006
T
= 150°C
A
0.012
0.008
T
T
= 125°C
= 85°C
A
A
T
= 25°C
A
V
= -4.5V
= -10V
T
= -55°C
GS
A
0.004
0.002
0
V
GS
0.004
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN CURRENT (A)
-ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
0.020
0.016
1.2
1.0
0.012
0.008
V
= -4.5V
I = -10A
D
GS
V
= -10V
GS
I
= -20A
D
V
= -4.5V
= -10A
V
= -10V
0.004
0
0.8
0.6
GS
GS
I
= -20A
I
D
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
Figure 6 On-Resistance Variation with Temperature
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DMP3010LK3
Document number: DS35716 Rev. 5 - 2
DMP3010LK3
2.5
2.0
30
25
20
I
= -1mA
D
1.5
1.0
T
= 25°C
A
15
10
I
= -250µA
D
0.5
0
5
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
TA, AMBIENT TEMPERATURE (°C)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10,000
Figure 8 Diode Forward Voltage vs. Current
100,000
10,000
1,000
C
iss
T
T
= 150°C
= 125°C
A
A
C
oss
1,000
C
rss
100
T
= 85°C
A
10
1
f = 1MHz
T
= 25°C
A
100
0
5
10
15
20
25
30
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Total Capacitance
Figure 10 Typical Leakage Current vs. Drain-Source Voltage
10
8
100
Single Pulse
90
R
R
T
= 72°C/W
JA
(t) = r(t) * R
V
= -15V
JA
JA
DS
80
70
60
50
40
30
20
- T = P * R
I
= -10A
J
A
JA
D
6
4
2
0
10
0
0.001 0.01
0.1
1
10
100 1,000
0
20
40
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Source Voltage vs. Total Gate Charge
60
80
100
120 140
t1, PULSE DURATION TIME (sec)
Figure 12 Single Pulse Maximum Power Dissipation
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DMP3010LK3
Document number: DS35716 Rev. 5 - 2
DMP3010LK3
80
70
700
600
Starting Temperature (T ) = 25°C
J
E
60
50
AS
500
400
300
200
I
AS
40
30
20
100
0
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INDUCTOR (mH)
Figure 13 Single-Pulse Avalanche Tested
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.50
D = 0.02
0.01
R
R
(t) = r(t) * R
= 72°C/W
JA
JA
JA
D = 0.01
Duty Cycle, D = t1/ t2
D = 0.005
D = Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1,000
10,000
t1, PULSE DURATION TIMES (sec)
Figure 14 Transient Thermal Resistance
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DMP3010LK3
Document number: DS35716 Rev. 5 - 2
DMP3010LK3
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TO252
Dim Min Max Typ
2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
E
b3
A
A
c2
L3
D
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
E1
A2
H
D
6.00 6.20 6.10
D1 5.21
e
2.286
E
6.45 6.70 6.58
L4
A1
E1 4.32
H
L
9.40 10.41 9.91
1.40 1.78 1.59
L
e
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
3X b
2X b2
a
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Z
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
Y2
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
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DMP3010LK3
Document number: DS35716 Rev. 5 - 2
DMP3010LK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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Copyright © 2013, Diodes Incorporated
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