DMP3010LPS-13 [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET; P沟道增强型MOSFET
| 型号： | DMP3010LPS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3010LPS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
•
•
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
ID
V(BR)DSS
RDS(ON)
TA = 25°C
(Note 5)
Low RDS(on) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
ESD HBM Protected up to 1kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
-36A
7.5mΩ @ VGS = -10V
10mΩ @ VGS = -4.5V
30V
-31A
Description and Applications
Qualified to AEC-Q101 Standards for High Reliability
This new generation 30V P-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(on) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and Loadswitch.
Mechanical Data
•
•
Case: PowerDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
•
•
Notebook Battery Power Management
DC-DC Converters
Loadswitch
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (approximate)
Drain
S
S
Pin 1
S
D
D
D
D
S
S
G
Gate
S
D
D
G
Source
Internal Schematic
D
D
Top View
Top View
Bottom View
Pin Configuration
Ordering Information (Note 3)
Part Number
Case
Packaging
DMP3010LPS-13
PowerDI5060-8
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
D
D
D
D
Logo
P3010LS
YY WW
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
S
S
S
G
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www.diodes.com
December 2010
© Diodes Incorporated
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
DMP3010LPS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Unit
V
Gate-Source Voltage
±20
V
VGSS
T
T
T
A = 25°C
A = 70°C
A = 25°C
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
-36
-29
A
A
A
ID
ID
ID
Steady
Continuous Drain Current (Note 5) VGS = 4.5V
State
-31
-25
TA = 70°C
T
T
A = 25°C
A = 70°C
Steady
Continuous Drain Current (Note 4) VGS = 10V
State
-14.5
-11.5
Pulsed Drain Current (Notes 4 & 7)
-100
-17.5
153
A
A
IDM
IAR
Avalanche Current (Notes 8 & 9)
Repetitive Avalanche Energy (Notes 8 & 9) L = 1mH
mJ
EAR
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Symbol
PD
Value
2.18
55
Unit
W
°C/W
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation (Note 5)
RθJA
PD
14.37
8.7
°C/W
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Power Dissipation (Notes 5 & 6)
RθJA
PD
58.7
2.13
°C/W
Thermal Resistance, Junction to Case @TC = 25°C (Notes 5 & 6)
Operating and Storage Temperature Range
RθJC
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
-
-
-1.0
±100
μA
nA
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.1
-1.6
5.7
-2.1
7.5
10
V
VGS(th)
VDS = VGS, ID = -250μA
VGS = -10V, ID = -10A
-
-
-
-
Static Drain-Source On-Resistance
mꢀ
RDS (ON)
7.2
V
GS = -4.5V, ID = -10A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
30
-
S
V
|Yfs|
VSD
VDS = -15V, ID = -10A
VGS = 0V, IS = -1A
-0.65
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
6234
1500
774
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
V
DS = 15V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
1.28
126.2
59.2
16.1
15.7
11.4
9.4
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -10A
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
Qg
V
DS = -15V, VGS = -4.5V,
Qgs
Qgd
tD(on)
tr
I
D = -10A
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = -15V, VGEN = -10V,
RG = 6ꢀ, ID = -1A
Turn-Off Delay Time
260.7
99.3
tD(off)
tf
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 PCB with 1 inch square 2 oz. Copper, single sided.
5. Device mounted on FR-4 PCB with infinite heatsink.
6. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
7. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
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December 2010
© Diodes Incorporated
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
DMP3010LPS
30
25
30
25
20
15
V
= -10V
GS
V
= -4.5V
= -5.0V
V
= -5V
DS
GS
V
GS
V
= -3.5V
20
15
10
GS
V
= -3.0V
GS
V
= -2.5V
GS
10
T
A
= 150°C
A
T
= 125°C
5
0
T
= 85°C
5
0
A
T
= 25°C
A
V
= -2.0V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
Fig. 2 Typical Transfer Characteristic
0.016
0.014
0.020
0.016
V
= -4.5V
GS
0.012
0.010
0.008
0.006
T
= 150°C
A
0.012
0.008
T
T
= 125°C
= 85°C
A
A
T
= 25°C
A
V
= -4.5V
= -10V
T
= -55°C
GS
A
0.004
0.002
0
V
GS
0.004
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and Temperature
1.6
1.4
0.020
0.016
1.2
1.0
0.012
0.008
V
= -4.5V
I = -10A
D
GS
V
= -10V
GS
I
= -20A
D
V
= -4.5V
= -10A
V
= -10V
0.004
0
0.8
0.6
GS
GS
I
= -20A
I
D
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
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December 2010
© Diodes Incorporated
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
DMP3010LPS
2.5
2.0
30
25
20
I
= -1mA
D
1.5
1.0
T
= 25°C
A
15
10
I
= -250µA
D
0.5
0
5
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
100,000
10,000
1,000
C
iss
T
T
= 150°C
A
= 125°C
A
C
oss
1,000
C
rss
100
T
= 85°C
A
10
1
f = 1MHz
T
= 25°C
A
100
0
5
10
15
20
25
30
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10
8
V
= -15V
DS
I
= -10A
D
6
4
2
0
0
20
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
60
80
100
120 140
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December 2010
© Diodes Incorporated
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
DMP3010LPS
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.9
R
(t) = r(t) * R
θJA
D = 0.05
θJA
R
= 97°C/W
θJA
D = 0.02
D = 0.01
D = 0.005
P(pk)
t
1
t
2
T
- T = P * R (t)
J
A θJA
Duty Cycle, D = t /t
1
2
DUT mounted on FR-4 PCB with
minimum recommended pad layout
D = Single Pulse
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
PowerDI5060-8L
Dim Min Max Typ
0.90 1.10 1.00
A1 0.00 0.05
0.33 0.51 0.41
b2 0.200 0.350 0.273
D
D1
DETAILA
A
θ
θ
(4x)
-
b
A1
c
c
D
0.230 0.330 0.277
5.15BSC
e
E
E1
D1 4.70 5.10 4.90
D2 3.50 4.40 3.90
1 (4x)
b (8x)
E
6.15BSC
E1 5.60 6.00 5.80
E2 3.28 3.68 3.48
L
D2
e
G
L
1.27BSC
0.51 0.71 0.61
0.51 0.71 0.61
b2 (4x)
DETAILA
E2
M
L1 0.050 0.20 0.175
3.235 4.035 3.635
M1 1.00 1.40 1.21
M
A
M1
θ
θ1
10°
6°
12°
8°
11°
7°
G
L1
All Dimensions in mm
Suggested Pad Layout
X
Dimensions
Value (in mm)
Y2
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
1.270
0.660
0.820
4.420
4.100
0.610
6.610
3.810
1.020
1.270
X1
Y1
Y
G1
C
Y3 (4x)
X2 (8x)
G
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December 2010
© Diodes Incorporated
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
DMP3010LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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December 2010
© Diodes Incorporated
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
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