DMP4013LFG-7 [DIODES]

Small Signal Field-Effect Transistor,;
DMP4013LFG-7
型号: DMP4013LFG-7
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Small Signal Field-Effect Transistor,

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中文:  中文翻译
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DMP4013LFG  
40V P-CHANNEL ENHANCEMENT MODE MOSFET  
POWERDI®  
Product Summary  
Features and Benefits  
Low RDS(ON) ensures on state losses are minimized.  
Small form factor thermally efficient package enables higher  
density end products.  
ID max  
TA = +25°C  
-10.3A  
BVDSS  
RDS(ON) max  
13mΩ @ VGS = -10V  
18m@ VGS = -4.5V  
-40V  
-8.8A  
Occupies 33% of the board area occupied by SO-8, enabling  
smaller end product.  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description and Applications  
This MOSFET is designed to minimize the on-state resistance  
(RDS(ON)) and yet maintain superior switching performance, making it  
ideal for high-efficiency power management applications.  
Mechanical Data  
Case: POWERDI®3333-8  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections Indicator: See Diagram  
Terminals: Finish Matte Tin Annealed over Copper Leadframe.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.072 grams (Approximate)  
Backlighting  
Power Management Functions  
DC-DC Converters  
POWERDI®3333-8  
D
Pin 1  
S
S
S
G
G
D
D
D
D
S
Bottom View  
Top View  
Equivalent Circuit  
Ordering Information (Note 4)  
Part Number  
DMP4013LFG-7  
DMP4013LFG-13  
Case  
Packaging  
2,000/Tape & Reel  
3,000/Tape & Reel  
POWERDI®3333-8  
POWERDI®3333-8  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
POWERDI®3333-8  
P13= Product Type Marking Code  
YYWW = Date Code Marking  
YY = Last Digit of Year (ex: 13 = 2013)  
WW = Week Code (01 ~ 53)  
P13  
POWERDI is a registered trademark of Diodes Incorporated.  
1 of 7  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMP4013LFG  
Document number: DS37205 Rev. 3 - 2  
DMP4013LFG  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-40  
Units  
V
V
Gate-Source Voltage  
±20  
VGSS  
Steady  
State  
TA = +25°C  
-10.3  
-8.3  
A
A
ID  
ID  
TA = +70°C  
TA = +25°C  
TA = +70°C  
Continuous Drain Current (Note 6) VGS = -10V  
-13.7  
-11  
t<10s  
Pulsed Drain Current (10µs pulse, duty cycle = 1%)  
80  
2.6  
34  
58  
A
A
IDM  
IS  
Maximum Continuous Body Diode Forward Current (Note 6)  
Avalanche Current, L = 0.1mH  
A
IAS  
EAS  
Avalanche Energy, L = 0.1mH  
mJ  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
PD  
Value  
Units  
Total Power Dissipation (Note 5)  
1
W
Steady State  
123  
69  
Thermal Resistance, Junction to Ambient (Note 5)  
Total Power Dissipation (Note 6)  
°C/W  
W
R  
JA  
t<10s  
2.1  
60  
PD  
Steady State  
t<10s  
Thermal Resistance, Junction to Ambient (Note 6)  
R  
JA  
34  
°C/W  
°C  
Thermal Resistance, Junction to Case (Note 6)  
Operating and Storage Temperature Range  
3.3  
R  
JC  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-40  
-1  
V
BVDSS  
IDSS  
VGS = 0V, ID = -250μA  
VDS = -40V, VGS = 0V  
VGS = ±20V, VDS = 0V  
µA  
nA  
Zero Gate Voltage Drain Current TJ = +25°C  
Gate-Source Leakage  
±100  
IGSS  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
-1  
-3  
13  
V
mΩ  
V
VGS(th)  
RDS (ON)  
VSD  
VDS = VGS, ID = -250μA  
VGS = -10V, ID = -10A  
VGS = -4.5V, ID = -8A  
VGS = 0V, IS = -1A  
9.4  
Static Drain-Source On-Resistance  
12.3  
-0.7  
18  
Diode Forward Voltage  
-1.2  
DYNAMIC CHARACTERISTICS (Note 8)  
Input Capacitance  
  
  
  
  
pF  
pF  
pF  
Ω
Ciss  
Coss  
Crss  
Rg  
3,426  
283  
VDS = -20V, VGS = 0V,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
235  
4.7  
VDS = 0V, VGS = 0V, f = 1MHz  
32.5  
68.6  
nC  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
nS  
nC  
Total Gate Charge (VGS = -4.5V)  
Total Gate Charge (VGS = -10V)  
Gate-Source Charge  
Qg  
Qg  
VDS = -20V, ID = -10A  
8.2  
9.9  
5.3  
20  
Qgs  
Qgd  
tD(on)  
tr  
Gate-Drain Charge  
Turn-On Delay Time  
Turn-On Rise Time  
VDD = -20V, VGEN = -10V,  
126  
83  
Turn-Off Delay Time  
RG = 3Ω, ID = -10A  
tD(off)  
tf  
Turn-Off Fall Time  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
19.5  
9.8  
trr  
IF = -10A, di/dt = 100A/μs  
Qrr  
Notes:  
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.  
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.  
7. Short duration pulse test used to minimize self-heating effect.  
8. Guaranteed by design. Not subject to product testing.  
POWERDI is a registered trademark of Diodes Incorporated.  
2 of 7  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMP4013LFG  
Document number: DS37205 Rev. 3 - 2  
DMP4013LFG  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
30  
25  
20  
15  
10  
5
V
= -10V  
GS  
V
= -5.0V  
DS  
V
= -4.5V  
GS  
V
= -4.0V  
GS  
V
= -2.5V  
GS  
V
= -3.5V  
GS  
V
= -3.0V  
GS  
T
= 150C  
A
T
= 85C  
A
T
= 125C  
A
T
= 25C  
V
= -2.0V  
A
GS  
T
= -55C  
A
0
0.5  
0.0  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 2 Typical Transfer Characteristics  
VDS, DRAIN -SOURCE VOLTAGE (V)  
Figure 1 Typical Output Characteristics  
0.016  
0.014  
0.012  
0.01  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
I
= 10A  
= 8A  
D
I
D
V
= -4.5V  
GS  
V
= -10V  
GS  
0.008  
0.006  
0
5
10  
15  
20  
25  
30  
0
2
4
6
8
10 12 14 16 18 20  
ID, DRAIN SOURCE CURRENT (A)  
Figure 3 Typical On-Resistance vs.  
Drain Current and Gate Voltage  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 4 Typical Transfer Characteristics  
0.02  
0.018  
0.016  
0.014  
0.012  
0.01  
1.8  
1.6  
1.4  
1.2  
1
V
= -10V  
GS  
V
I
= -10V  
GS  
= -10A  
T
= 150C  
= 85C  
D
A
T
= 125C  
A
V
I
= -4.5V  
GS  
= -8A  
T
A
D
T
= 25C  
A
0.008  
0.006  
0.004  
T
A
= -55C  
0.8  
0.6  
0
5
10  
15  
20  
25  
30  
-50 -25  
0
25  
50  
75 100 125 150  
TJ, JUNCTION TEMPERATURE (C)  
ID, DRAIN SOURCE CURRENT (A)  
Figure 6 On-Resistance Variation with Temperature  
Figure 5 Typical On-Resistance vs.  
Drain Current and Temperature  
POWERDI is a registered trademark of Diodes Incorporated.  
3 of 7  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMP4013LFG  
Document number: DS37205 Rev. 3 - 2  
DMP4013LFG  
0.022  
0.02  
1.8  
1.6  
1.4  
1.2  
1
V
I
= -4.5V  
GS  
= -8A  
0.018  
0.016  
0.014  
0.012  
0.01  
D
-I = 1mA  
D
-I = 250µA  
D
V
I
= -10V  
GS  
= -10A  
D
0.8  
0.6  
0.4  
0.008  
0.006  
0.004  
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
TJ, JUNCTION TEMPERATURE (C)  
TA, AMBIENT TEMPERATURE (°C)  
Figure 7 On-Resistance Variation with Temperature  
Figure 8 Gate Threshold Variation vs. Ambient Temperature  
30  
25  
20  
15  
10  
5
10000  
f = 1MHz  
C
iss  
1000  
T = 150C  
A
T = 85C  
A
T = 125C  
A
T = 25C  
A
C
oss  
C
rss  
T = -55C  
A
0
0
100  
0.3  
0.6  
0.9  
1.2  
1.5  
0
5
10  
15  
20  
25  
30  
35  
40  
VSD, SOURCE-DRAIN VOLTAGE (V)  
Figure 9 Diode Forward Voltage vs. Current  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 10 Typical Junction Capacitance  
10  
8
100  
10  
R
DS(on)  
Limited  
DC  
6
P
= 10s  
W
V
I
= -20V  
DS  
= -10A  
1
P
= 1s  
W
D
P
= 100ms  
W
4
P
= 10ms  
W
0.1  
0.01  
TJ(max) = 150°C  
TA = 25°C  
VGS = -10V  
Single Pulse  
P
= 1ms  
P
W
2
= 100µs  
W
DUT on 1 * MRP Board  
0
0
10  
20  
Qg, TOTAL GATE CHARGE (nC)  
Figure 11 Gate-Charge Characteristics  
30  
40  
50  
60  
70  
0.1  
1
10  
100  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 12 SOA, Safe Operation Area  
POWERDI is a registered trademark of Diodes Incorporated.  
4 of 7  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMP4013LFG  
Document number: DS37205 Rev. 3 - 2  
DMP4013LFG  
1
D = 0.9  
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.01  
D = 0.005  
0.01  
RJA(t) = r(t) * RJA  
RJA = 119°C/W  
Duty Cycle, D = t1/ t2  
Single Pulse  
0.001  
1E-04  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, PULSE DURATION TIMES (sec)  
Figure 13 Transient Thermal Resistance  
POWERDI is a registered trademark of Diodes Incorporated.  
5 of 7  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMP4013LFG  
Document number: DS37205 Rev. 3 - 2  
DMP4013LFG  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.  
POWERDI®3333-8  
A3  
A1  
A
Seating Plane  
POWERDI®3333-8  
Dim Min Max Typ  
0.75 0.85 0.80  
A1 0.00 0.05 0.02  
D
A
L( 4x)  
D2  
1
A3  
b
0.203  
0.27 0.37 0.32  
0.20  
3.25 3.35 3.30  
  
  
b2  
D
  
  
Pin #1 ID  
D2 2.22 2.32 2.27  
3.25 3.35 3.30  
E2 1.56 1.66 1.61  
0.65  
e1 0.79 0.89 0.84  
b2( 4x)  
L1( 3x)  
E
E
e1  
E2  
e
  
  
L
L1  
z
0.35 0.45 0.40  
0.39  
  
  
  
  
8
z( 4x)  
0.515  
b
All Dimensions in mm  
e
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
POWERDI®3333-8  
X3  
X2  
8
Dimensions Value (in mm)  
X1  
Y1  
C
X
0.650  
0.420  
0.420  
0.230  
2.370  
0.700  
1.850  
2.250  
3.700  
Y2  
X1  
X2  
X3  
Y
Y3  
Y1  
Y2  
Y3  
Y
X
1
C
POWERDI is a registered trademark of Diodes Incorporated.  
6 of 7  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMP4013LFG  
Document number: DS37205 Rev. 3 - 2  
DMP4013LFG  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for  
use provided in the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
POWERDI is a registered trademark of Diodes Incorporated.  
7 of 7  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMP4013LFG  
Document number: DS37205 Rev. 3 - 2  

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