DMTH4005SK3Q-13 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMTH4005SK3Q-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Green
DMTH4005SK3Q
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Rated to +175°C
Environments
– Ideal for High Ambient Temperature
ID
BVDSS
RDS(ON) Max
4.5mΩ @ VGS = 10V
TC = +25°C
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
40V
95A
Low RDS(ON) – Minimizes Power Losses
Low Qg – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET has been designed to meet the stringent requirements
of Automotive applications. It is qualified to AEC-Q101, supported by
a PPAP and is ideal for use in:
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Engine Management Systems
Body Control Electronics
DC-DC Converters
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
D
D
TO252 (DPAK)
G
G
S
S
Top View
Top View
Pin Out
Internal Schematic
Ordering Information (Note 5)
Part Number
DMTH4005SK3Q-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
H4005S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
H4005S
YYWW
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© Diodes Incorporated
DMTH4005SK3Q
Document number: DS38661 Rev. 2 - 2
DMTH4005SK3Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
40
Units
V
V
Gate-Source Voltage
±20
VGSS
TC = +25°C
(Note 10)
95
Continuous Drain Current (Note 7)
A
ID
TC = +100°C
73
83
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
A
A
TC = +25C
IS
150
32.5
52.8
IDM
IAS
EAS
A
Avalanche Energy, L=0.1mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
PD
Value
2.1
Units
W
TA = +25°C
TC = +25°C
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
38
°C/W
W
RθJA
100
PD
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
1.5
°C/W
°C
RθJC
-55 to +175
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
40
V
1
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
2
4
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
3.6
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 0V, IS = 50A
Static Drain-Source On-Resistance
4.5
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
0.9
3,062
902.2
179.2
0.67
49.1
10.3
13
Ciss
Coss
Crss
RG
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 20V, ID = 50A,
Total Gate Charge
Qg
Gate-Source Charge
nC
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
8.7
Turn-On Delay Time
Turn-On Rise Time
6.8
18.6
7.3
31.8
26.5
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3Ω
ns
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
tRR
IF = 50A, di/dt = 100A/μs
nC
QRR
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
10. Package limited.
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© Diodes Incorporated
DMTH4005SK3Q
Document number: DS38661 Rev. 2 - 2
DMTH4005SK3Q
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
20
18
16
14
12
10
8
VGS = 10.0V
VGS = 5.0V
VDS = 5.0V
VGS=4.5V
125℃
150℃
85℃
6
VGS = 4.0V
VGS = 3.5V
175℃
4
25℃
2
-55℃
0
0.0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
20
18
16
14
12
10
8
6.00
5.00
4.00
3.00
2.00
1.00
0.00
VGS = 10.0V
6
ID = 50A
4
2
0
0
5
10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
14
16
18
20
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
2.2
2
VGS = 10V
175℃
150℃
1.8
1.6
1.4
1.2
1
125℃
85℃
25℃
-55℃
0.8
0.6
0.4
VGS = 10V, ID = 50A
10
20
30 40
50 60
70
80 90 100
-50 -25
0
25
50
75 100 125 150 175
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
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DMTH4005SK3Q
Document number: DS38661 Rev. 2 - 2
DMTH4005SK3Q
0.008
0.006
0.004
0.002
0
3.5
3
ID = 1mA
2.5
2
ID = 250μA
1.5
1
VGS = 10V, ID = 50A
0.5
0
-50 -25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
50
75 100 125 150 175
-50 -25
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
10000
1000
100
f = 1MHz
VGS = 0V
Ciss
Coss
TA = 85oC
Crss
TA = 125oC
TA = 150oC
TA = 150oC
TA = 25oC
TA = -55oC
10
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
RDS(ON) Limited
PW =10µs
PW =1µs
6
PW =100µs
PW =1ms
PW =10ms
PW =100ms
PW =1s
4
VDS = 20V, ID = 50A
1
TJ(Max) = 175℃ TC = 25℃
Single Pulse
2
DUT on Infinite Heatsink
VGS= 10V
0
0.1
0
10
20
30
Qg (nC)
Figure 11. Gate Charge
40
50
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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© Diodes Incorporated
DMTH4005SK3Q
Document number: DS38661 Rev. 2 - 2
DMTH4005SK3Q
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
D=Single Pulse
RθJC(t) = r(t) * RθJC
RθJC = 1.5℃/W
Duty Cycle, D = t1 / t2
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMTH4005SK3Q
Document number: DS38661 Rev. 2 - 2
DMTH4005SK3Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK)
E
A
b3
7°± 1°
c
L3
TO252 (DPAK)
Dim Min Max Typ
2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
A
D
A2
H
L4
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c
D
0.45 0.58 0.531
6.00 6.20 6.10
e
D1 5.21
-
-
-
b( 3x)
e
-
2.286
b2( 2x)
E
6.45 6.70 6.58
0.508
E1 4.32
-
-
Gauge Plane
H
L
9.40 10.41 9.91
1.40 1.78 1.59
D1
Seating Plane
E1
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
L
A1
0°
10°
-
2.74REF
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK)
X1
Dimensions Value (in mm)
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y1
Y2
C
Y
X
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DMTH4005SK3Q
Document number: DS38661 Rev. 2 - 2
DMTH4005SK3Q
PORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
DMTH4005SK3Q
Document number: DS38661 Rev. 2 - 2
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