FMMT458 [DIODES]
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR; SOT23 NPN硅平面高电压晶体管
| 型号： | FMMT458 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FMMT458
ISSUE 4 – APRIL 2002
FEATURES
*
400 Volt VCEO
E
C
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FMMT558
458
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
400
Collector-Emitter Voltage
Emitter-Base Voltage
400
V
5
225
V
Continuous Collector Current
Peak Pulse Current
mA
A
ICM
1
Base Current
IB
200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
V
CONDITIONS.
IC=100µA
Collector-Base
V(BR)CBO
400
400
5
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
VCEO(sus)
V(BR)EBO
V
V
IC=10mA*
IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
ICES
IEBO
100
100
100
nA
nA
nA
VCB=320V
VCE=320V
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.2
0.5
V
V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
Base-Emitter
VBE(sat)
VBE(on)
hFE
0.9
V
IC=50mA, IB=5mA*
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
0.9
V
IC=50mA, VCE=10V*
100
100
15
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
300
5
Transition Frequency
fT
50
MHz
pF
ns
ns
Output Capacitance
Switching times
Cobo
ton
toff
VCB=20V, f=1MHz
135 Typical
2260 Typical
IC=50mA, VCC=100V
IB1=5mA, IB2=-10mA
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
TBA
FMMT458
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
+175°C
IC/IB=10
IC/IB=20
IC/IB=50
IC/IB=10
Tamb=25°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
Collector Current (Amps)
IC -
I -
C
Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
IC/IB=10
VCE=10V
1.6
1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
300
200
100
+175°C
1.2
1.0
0.8
0.6
0.4
0.2
0.2
0
0
0.001
0.01
0.1
10 20
1
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
1.0
0.1
-55°C
+25°C
+100°C
+175°C
VCE=10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0
0.001
0.01
0.1
1
10 20
0.001
1
10
100
1000
Collector Current (Amps)
CE Collector Voltage (Volts)
IC -
V
-
VBE(on) v IC
Safe Operating Area
TBA
相关型号：
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Small Signal Bipolar Transistor, 0.225A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3
DIODES
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