FMMT624 [DIODES]
SOT23 NPN SILICON POWER; SOT23 NPN硅功率
| 型号： | FMMT624 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT23 NPN SILICON POWER |
| 文件： | 总4页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SuperSOT
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
*
*
*
*
*
IC CONT 3A
E
12A Peak Pulse Current
C
Excellent HFE Characteristics Up To 12A (pulsed)
Extremely Low Saturation Voltage E.g. 8mV Typ.
Extremely Low Equivalent On Resistance; RCE(sat)
B
DEVICE TYPE
FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
COMPLEMENT
FMMT717
FMMT718
FMMT720
FMMT723
PARTMARKING
RCE(sat)
50mΩ at 3A
50mΩ at 2A
75mΩ at 2A
-
617
618
619
624
625
-
ABSOLUTE MAXIMUM RATINGS.
FMMT FMMT FMMT FMMT FMMT
PARAMETER
SYMBOL
617
15
15
5
618
20
20
5
619
624
125
125
5
625
150
150
5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
VCBO
VCEO
VEBO
ICM
IC
50
50
V
5
V
12
3
6
6
2
3
3
A
2.5
1
1
A
IB
500
mA
mW
°C
Power Dissipation at Tamb=25°C*
Ptot
625
Operating and Storage Temperature Tj:Tstg
Range
-55 to +150
*
Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
3 - 149
FMMT617
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
15
15
5
70
18
8.2
V
IC=100µA
IC=10mA*
IE=100µA
VCB=10V
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
100
nA
Emitter Cut-Off Current IEBO
100
100
nA
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
200
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
1.0
1.0
V
V
IC=3A, IB=50mA*
Base-Emitter Turn-On VBE(on)
Voltage
0.84
IC=3A, VCE=2V*
Static Forward Current hFE
Transfer
Ratio
200
300
200
150
415
450
320
240
80
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
Transition
Frequency
fT
80
120
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Turn-On Time
Cobo
t(on)
t(off)
30
40
pF
ns
ns
VCB=10V, f=1MHz
120
160
VCC=10V, IC=3A
IB1=IB2=50mA
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 150
FMMT617
TYPICAL CHARACTERISTICS
1
100m
10m
1m
0.4
0.3
0.2
0.1
0.0
1m
10m
100m
1
10
1mA
10mA 100mA
1A
10A
Collector Current
IC - Collector Current (A)
VCE(SAT) vs IC
VCE(SAT) v IC
1.4
1.2
1.0
0.8
0.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
450
225
0
0.4
0.2
0.0
1A
10A
100mA
100A
1mA
10mA
1mA
10mA
1A
10A
100mA
100A
Collector Current
Collector Current
hFE vs IC
VBE(SAT) vs IC
SINGLE PULSE TEST
T
= 25 deg C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1.0
0.1
µ
0.01
1mA
10mA 100mA
1A
10A
100A
0.1
1.0
VCE (VOLTS)
10
100
Collector Current
VBE(ON) vs IC
Safe Operating Area
3 - 151
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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