FMMTL618 [DIODES]
SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR; SOT23 NPN硅平面高增益介质功率晶体管
| 型号： | FMMTL618 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – NOVEMBER 1997
FMMTL618
FEATURES
Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A
E
COMPLEMENTARY TYPE – FMMTL718
C
PARTMARKING DETAIL –
L68
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
20
V
5
1.25
V
Continuous Collector Current
Peak Pulse Current
A
ICM
4
A
Base Current
IB
200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
FMMTL618
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
60
20
5
105
IC=100µA
Collector-Emitter
Breakdown Voltage
30
V
V
IC=10mA*
Emitter-Base
Breakdown Voltage
8.5
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Cut-Off Current ICES
10
10
10
nA
nA
nA
VCB=16V
VEB=4V
VCE=16V
Collector-Emitter
Saturation Voltage
VCE(sat)
18
35
mV
mV
mV
mV
mV
IC=100mA, IB=10mA*
IC=500mA, IB=25mA*
IC=1A, IB=100mA*
IC=1.25A, IB=100mA*
IC=2A, IB=200mA*
80
160
200
280
350
130
170
260
Base-Emitter
VBE(sat)
VBE(on)
hFE
1000
1100
mV
IC=1.25A, IB=100mA*
Saturation Voltage
Base-Emitter
Turn On Voltage
850
1000
mV
IC=1.25A, VCE=2V*
Static Forward
Current Transfer Ratio
200
300
250
200
100
50
400
440
400
300
190
100
IC=10mA, VCE=2V
IC=200mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=3A, VCE=2V*
Transition Frequency
fT
195
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
9
12
VCB=10V, f=1MHz
Switching times
ton
toff
72
388
ns
ns
IC=1A, VCC=10V
IB1=-IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMTL618
TYPICAL CHARACTERISTICS
IC/IB=10
300m
+25°C
300m
200m
100m
0
-55°C
+25°C
+100°C
200m
100m
0
IC/IB=10
IC/IB=20
IC/IB=50
1mA
10mA
100mA
1A
10A
1m
10m
100m
1A
10A
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
IC/IB=10
VCE=2V
600
300
0
1.0
0.8
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
10A
1.0
0.8
0.6
0.4
0.2
0
VCE=2V
1A
100m
10m
DC
1s
100ms
10ms
1ms
-55°C
+25°C
100us
+100°C
1mA
10mA
100mA
1A
10A
100m
1
10
100
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
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