FMMTL619TC [DIODES]
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| 型号： | FMMTL619TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 暂无描述 晶体 晶体管 开关 光电二极管 局域网 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 2 – NOVEMBER 2005
FMMTL619
FEATURES
Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A
E
COMPLEMENTARY TYPE – FMMTL720
C
PARTMARKING DETAIL –
L69
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
100
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
1.25
V
Continuous Collector Current
Peak Pulse Current
A
ICM
2
A
Base Current
IB
200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
FMMTL619
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
100
50
5
210
IC=100µA
Collector-Emitter
Breakdown Voltage
70
V
V
IC=5mA*
Emitter-Base
Breakdown Voltage
8.5
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Cut-Off Current ICES
10
10
10
nA
nA
nA
VCB=40V
VEB=4V
VCE=40V
Collector-Emitter
Saturation Voltage
VCE(sat)
24
45
mV
mV
mV
mV
IC=100mA, IB=10mA*
IC=250mA, IB=10mA*
IC=500mA, IB=25mA*
IC=1.25A, IB=125mA*
60
100
180
330
100
195
Base-Emitter
VBE(sat)
VBE(on)
hFE
1020
1100
mV
IC=1.25A, IB=125mA*
Saturation Voltage
Base-Emitter
Turn On Voltage
895
1000
mV
IC=1.25A, VCE=2V*
Static Forward
Current Transfer Ratio
200
300
200
100
30
400
450
400
230
50
IC=10mA, VCE=5V
IC=200mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transition Frequency
fT
180
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
6
8
VCB=10V, f=1MHz
Switching times
ton
toff
182
379
ns
ns
IC=1A, VCC=10V
I
B1=-IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMTL619
TYPICAL CHARACTERISTICS
0.5
0.4
0.3
0.2
0.1
0
0.5
IC/IB=20
+25°C
0.4
-55°C
+25°C
+100°C
IC/IB=10
IC/IB=20
IC/IB=50
0.3
0.2
0.1
0
1m
1m
1m
10m
100m
1
10
10
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
IC/IB=10
VCE=5V
700
350
0
1.0
0.8
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
1m
10m
100m
1
10
10m
100m
1
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1.2
0.8
0.4
0
10
1
VCE=5V
DC
1s
100ms
10ms
1ms
100m
10m
-55°C
+25°C
+100°C
100us
100m
1
10
100
10m
100m
1
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
相关型号：
FMMTL717QTA
Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon,
DIODES
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