MBR3060PT [DIODES]
30A SCHOTTKY BARRIER RECTIFIER; 30A肖特基整流器
| 型号： | MBR3060PT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-3P
Dim
A
B
C
D
E
Min
3.20
Max
3.50
·
·
·
4.59
5.16
A
B
20.80
19.70
2.10
21.30
20.20
2.40
H
·
·
J
S
R
C
D
G
H
J
0.51
0.76
15.90
1.70
16.40
2.70
K
L
K
L
3.10Æ
3.50
3.30Æ
4.51
P*
*2 Places
Q
Mechanical Data
G
M
N
P
5.20
5.70
N
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 5.6 grams (approx.)
Mounting Position: Any
1.12
1.22
1.93
2.18
E
·
·
·
·
Q
R
S
2.97
3.22
M
M
11.70
12.80
4.30 Typical
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
MBR
MBR
MBR
MBR
MBR
Characteristic
Symbol
Unit
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
@ TC = 125°C
30
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage Drop
per element (Note 3)
@ IF = 20A, TC
= 25°C
0.65
0.60
0.75
0.65
VFM
IRM
V
@ IF = 20A, TC = 125°C
Peak Reverse Current
at Rated DC Blocking Voltage, per element @ TC = 125°C
@ TC 25°C
=
1.0
60
5.0
100
mA
Cj
Typical Junction Capacitance
(Note 2)
(Note 1)
700
pF
K/W
V/µs
°C
RqJc
Typical Thermal Resistance Junction to Case
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
1.4
2.0
dV/dt
Tj, TSTG
10,000
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.
DS23017 Rev. E-2
1 of 2
MBR3030PT - MBR3060PT
30
24
18
100
MBR 3030PT - MBR 3045PT
10
12
6
MBR 3050PT - MBR 3060PT
1.0
0.1
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0
0
0.2
0.4
0.6
0.8
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
VF, INSTANTANEOUS F0RWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
250
200
150
4000
Tj = 25°C
f = 1MHz
Tj = 25°C
8.3ms Single half-wave
JEDEC Method
1000
100
50
0
100
0.1
1.0
10
100
100
1
10
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
100
Tj = 125°C
10
1.0
Tj = 75°C
0.1
Tj = 25°C
0.01
0
40
60
80
100
120 140
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23017 Rev. E-2
2 of 2
MBR3030PT - MBR3060PT
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