MMBF170-13-F [DIODES]

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
MMBF170-13-F
型号: MMBF170-13-F
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

开关 光电二极管 晶体管
文件: 总5页 (文件大小:194K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBF170  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
Low On-Resistance  
Case: SOT23  
Low Gate Threshold Voltage  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Low Input Capacitance  
Fast Switching Speed  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Low Input/Output Leakage  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight: 0.008 grams (approximate)  
D
S
SOT23  
D
G
S
G
Top View  
Equivalent Circuit  
Top View  
Ordering Information (Note 4)  
Part Number  
MMBF170-7-F  
MMBF170-13-F  
Case  
SOT23  
SOT23  
Packaging  
3000/Tape & Reel  
10000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
K6Z = Product Type Marking Code  
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)  
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)  
Y or Y = Year (ex: A = 2014)  
M = Month (ex: 9 = September)  
̅
Chengdu A/T Site  
Shanghai A/T Site  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2011  
2012  
2013  
2014  
2015  
2016  
2017  
Code  
J
K
L
M
N
P
R
Y
Z
A
B
C
D
E
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
1 of 5  
www.diodes.com  
May 2014  
© Diodes Incorporated  
MMBF170  
Document number: DS30104 Rev. 14 - 2  
MMBF170  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Units  
V
V
60  
Drain-Gate Voltage RGS 1.0M  
VDGR  
Gate-Source Voltage  
Continuous  
Pulsed  
20  
40  
V
VGSS  
ID  
Drain Current (Note 5)  
Continuous  
Pulsed  
500  
800  
mA  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Total Power Dissipation (Note 5)  
Symbol  
Value  
Units  
300  
1.80  
mW  
mW/°C  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
417  
K/W  
°C  
RθJA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 6)  
Symbol Min  
Typ Max Unit  
Test Condition  
VGS = 0V, ID = 100μA  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
60  
70  
V
BVDSS  
IDSS  
1.0  
10  
µA  
nA  
VDS = 60V, VGS = 0V  
IGSS  
VGS = 15V, VDS = 0V  
ON CHARACTERISTICS (Note 6)  
Gate Threshold Voltage  
0.8  
2.1  
3.0  
V
VGS(th)  
RDS (ON)  
gFS  
VDS = VGS, ID = 250μA  
5.0  
5.3  
VGS = 10V, ID = 200mA  
  
  
Static Drain-Source On-Resistance  
V
GS = 4.5V, ID = 50mA  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
80  
mS  
VDS =10V, ID = 0.2A  
22  
11  
40  
30  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
Output Capacitance  
VDS = 10V, VGS = 0V, f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Time  
2.0  
5.0  
10  
10  
ns  
ns  
ton  
toff  
VDD = 25V, ID = 0.5A,  
VGS = 10V, RGEN = 50Ω  
Turn-Off Time  
Notes:  
5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our  
website at http://www.diodes.com.  
6. Short duration pulse test used to minimize self-heating effect.  
2 of 5  
www.diodes.com  
May 2014  
© Diodes Incorporated  
MMBF170  
Document number: DS30104 Rev. 14 - 2  
MMBF170  
7
6
5
1.0  
0.8  
0.6  
0.4  
0.2  
0
4
3
2
1
0
0
1
2
3
4
5
0
0.2  
0.4  
ID, DRAIN CURRENT (A)  
Fig. 2 On-Resistance vs. Drain Current  
0.6  
0.8  
1.0  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 On-Region Characteristics  
2.0  
6
5
1.5  
1.0  
4
3
2
0.5  
0
1
0
70  
Tj, JUNCTION TEMPERATURE (  
Fig. 3 On-Resistance vs. Junction Temperature  
0
2
4
6
8
10 12 14 16 18  
-55 -30  
-5  
20  
45  
95  
120 145  
C)  
°
VGS, GATE TO SOURCE VOLTAGE (V)  
Fig. 4 On-Resistance vs. Gate-Source Voltage  
400  
350  
300  
250  
200  
150  
100  
50  
0
200  
0
175  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 5 Max Power Dissipation vs. Ambient Temperature  
25  
50  
150  
100 125  
75  
3 of 5  
www.diodes.com  
May 2014  
© Diodes Incorporated  
MMBF170  
Document number: DS30104 Rev. 14 - 2  
MMBF170  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
A
SOT23  
Dim  
Min  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
A
B
C
D
F
G
H
J
K
K1  
L
M
  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
G
M
K
J
K1  
-
D
F
0.45  
0.085 0.18  
0° 8°  
0.61  
L
All Dimensions in mm  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
Y
Dimensions Value (in mm)  
Z
C
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
E
X
4 of 5  
www.diodes.com  
May 2014  
© Diodes Incorporated  
MMBF170  
Document number: DS30104 Rev. 14 - 2  
MMBF170  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2014, Diodes Incorporated  
www.diodes.com  
5 of 5  
www.diodes.com  
May 2014  
© Diodes Incorporated  
MMBF170  
Document number: DS30104 Rev. 14 - 2  

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