MMBT123S-7 [DIODES]
1A NPN SURFACE MOUNT TRANSISTOR; 1A NPN表面贴装晶体管
| 型号： | MMBT123S-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1A NPN SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT123S
1A NPN SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Collector Current Rating
Suitable as a low voltage high current driver
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
·
·
C
B
B
C
C
Mechanical Data
TOP VIEW
E
B
D
D
G
E
·
·
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K6D
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
E
H
G
H
K
M
·
·
J
J
L
K
L
·
·
·
·
C
M
a
All Dimensions in mm
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMBT123S
Unit
V
Collector-Base Voltage
45
Collector-Emitter Voltage
18
V
Emitter-Base Voltage
5
V
Collector Current - Continuous
Power Dissipation (Note 1)
1
300
A
Pd
mW
°C/W
°C
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
417
Tj, TSTG
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30292 Rev. 3 - 2
1 of 3
MMBT123S
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = 100mA, IE = 0
45
18
5
¾
¾
¾
1
V
V
IC = 1mA, IB = 0
IE = 100mA, IC = 0
VCB = 40V, IE = 0
VEB = 4V, IC = 0
V
¾
¾
mA
mA
IEBO
Emitter Cutoff Current
1
ON CHARACTERISTICS (Note 2)
DC Current Gain
IC = 100mA, VCE = 1V
IC = 300mA, IB = 30mA
hFE
150
800
0.5
¾
VCE(SAT)
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
¾
V
VCB = 10V, f = 1.0MHz, IE = 0
Cobo
fT
¾
8
pF
VCB = 10V, IE = 50mA,
f = 100MHz
Current Gain-Bandwidth Product
100
¾
MHz
(Note 3)
Ordering Information
Device
Packaging
Shipping
MMBT123S-7
SOT-23
3000/Tape & Reel
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6D = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K6D
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30292 Rev. 3 - 2
2 of 3
MMBT123S
1000
100
1
350
300
250
200
150
100
50
0
VCE = 1.0V
200
0
175
25
50
150
75 100 125
0.0001
.001
.01
.1
1
10
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Typical DC Current Gain vs
Collector Current
100
1000
f = 1MHz
100
10
10
1
1
0.0001
1
0.1
100
10
10
.001
.01
.1
1
VCB, COLLECTOR-BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Fig. 3, Output Capacitance vs.
Collector-Base Voltage
Fig. 4, Collector Saturation Voltage vs
Collector Current
DS30292 Rev. 3 - 2
3 of 3
MMBT123S
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